Heating device

Patent metadata

Field	Value
Publication number	US-9437463-B2
Application number	US-201313863729-A
Country	US
Kind code	B2
Filing date	Apr 16, 2013
Priority date	Oct 25, 2010
Publication date	Sep 6, 2016
Grant date	Sep 6, 2016

Abstract

A heating apparatus includes a susceptor having a heating face of heating a semiconductor and a supporting part joined with a back face of the susceptor. The susceptor comprises a ceramic material comprising magnesium, aluminum, oxygen and nitrogen as main components. The material comprises a main phase comprising magnesium-aluminum oxynitride phase exhibiting an XRD peak at least in 2θ=47 to 50° by CuKα X-ray.

First claim

The invention claimed is:

1. A heating apparatus for a semiconductor manufacturing system comprising:
a susceptor comprising a heating face of heating a semiconductor and a back face and a supporting part bonded with said back face of said susceptor,
wherein said susceptor comprises a ceramic material comprising magnesium, aluminum, oxygen and nitrogen as main components, and
wherein said ceramic material comprises at least 50 vol % magnesium-aluminum oxynitride phase exhibiting an XRD peak at least in 2θ=47 to 50° taken by using CuKα ray.

2. The heating apparatus of claim 1 , wherein said supporting part comprises said ceramic material.

3. The heating apparatus of claim 1 , further comprising:
a heat generator embedded in said susceptor; and
an electrical supplying member contained in an inner space of said supporting part and electrically connected to said heat generator.

4. The heating apparatus of claim 1 , wherein said 2θ is 47 to 49°.

5. The heating apparatus of claim 1 , said ceramic material comprising a sub phase comprising a crystal phase of MgO—AlN solid solution wherein aluminum nitride is dissolved into magnesium oxide.

6. The heating apparatus of claim 5 , wherein said MgO—AlN solid solution has XRD peaks at (200) and (220) faces taken by using CuKα ray in ranges of 2θ=42.9 to 44.8° and 62.3 to 65.2° , respectively, which are between peaks of cubic phase of magnesium oxide and cubic phase of aluminum nitride, respectively.

7. The heating apparatus of claim 5 , wherein said MgO—AlN solid solution has an XRD peak at (111) face taken by using CuKα ray in a range of 2θ=36.9 to 39° , which is between peaks of cubic phase of magnesium oxide and cubic phase of aluminum nitride.

8. The heating apparatus of claim 1 , wherein said ceramic material does not contain AlN crystal phase.

9. The heating apparatus of claim 1 , wherein a magnesium source in raw materials used for producing said ceramic material comprises MgO.

10. The heating apparatus of claim 1 , wherein said ceramic material has an open porosity of 0.12% or lower.

Assignees

• Ngk Insulators Ltd

Inventors

• Kondo Nobuyuki
• Watanabe Morimichi
• Jindo Asumi
• Katsuda Yuji
• Sato Yosuke
• Isoda Yoshinori

Classifications

• H10P72/72

  using electrostatic chucks · CPC title

• H10P72/00 Primary

  Handling or holding of wafers, substrates or devices during manufacture or treatment thereof · CPC title

• H10P14/60

  of insulating materials · CPC title

• H10P50/242 Primary

  of Group IV materials · CPC title

• C04B35/58

  based on borides, nitrides, {i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides} or silicides {(containing free binder metal C22C29/00)} · CPC title