Method for manufacturing semiconductor device

Patent metadata

Field	Value
Publication number	US-9437460-B2
Application number	US-201514665577-A
Country	US
Kind code	B2
Filing date	Mar 23, 2015
Priority date	Jun 27, 2014
Publication date	Sep 6, 2016
Grant date	Sep 6, 2016

Abstract

Entry of resin into a cylindrical electrode can be suppressed without excessively increasing the number of parts and without unnecessarily damaging members. For this purpose, a semiconductor chip and a cylindrical electrode are mounted on one main surface of substrate. The substrate, the semiconductor chip, and the cylindrical electrode are sealed with resin material such that the cylindrical electrode has one end mounted to the substrate and the other opposite end at least exposed. After the step of sealing, an opening extending from the other end of the cylindrical electrode to a cavity in the cylindrical electrode is formed. Before performing the step of forming an opening, the other end of the cylindrical electrode is closed.

First claim

What is claimed is:

1. A method for manufacturing a semiconductor device, comprising the steps of:
mounting a semiconductor chip and a cylindrical electrode on one main surface of a substrate, said cylindrical electrode including a side wall portion, a lower end, and an upper end, said upper end including an annular portion axially corresponding to said side wall portion and a transverse portion extending radially across said annular portion above a cavity formed in said cylindrical electrode, said transverse portion having a first axial thickness in a cavity cutout region directly above said cavity and a second axial thickness in another region directly above said cavity, wherein said first axial thickness is thinner than said second axial thickness;
sealing said substrate, said semiconductor chip, and said cylindrical electrode with resin material such that said lower end of said cylindrical electrode is mounted to said substrate and said upper end of said cylindrical electrode is exposed; and
forming an opening extending through said transverse portion of said upper end of said cylindrical electrode to said cavity in said cylindrical electrode after said step of sealing,
before performing said step of forming an opening, said upper end of said cylindrical electrode is closed by said transverse portion of said upper end.

2. The method for manufacturing a semiconductor device according to claim 1 , wherein
said cylindrical electrode is formed so as to include a flange on a side of said lower end, and
said cylindrical electrode is mounted to said substrate at said flange.

3. The method for manufacturing a semiconductor device according to claim 1 , wherein
an outer periphery of said cylindrical electrode is inclined so that a size of an outer periphery of said cylindrical electrode in a planar view is gradually reduced from a side of said lower end to a side of said upper end.

4. The method for manufacturing a semiconductor device according to claim 1 , wherein
before performing said step of forming an opening, said cavity cutout region is directly above an outer periphery of said cavity.

5. The method for manufacturing a semiconductor device according to claim 1 , wherein
said step of mounting a cylindrical electrode includes the steps of:
retaining a plurality of said cylindrical electrodes by means of a single jig; and
supplying said plurality of cylindrical electrodes collectively onto one main surface of said substrate by means of said jig.

Assignees

• Mitsubishi Electric Corp

Inventors

• Yoshimatsu Naoki
• Uchida Kiyohiro
• Shikano Taketoshi
• Shinkai Masayoshi

Classifications

• H10W90/734

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W72/07336

  Soldering or alloying · CPC title

• H10W72/5445

  being orthogonal to a side surface of the chip, e.g. parallel arrangements · CPC title

• H10W72/5363

  the connected ends being wedge-shaped · CPC title

• H10W72/884

  Die-attach connectors and bond wires · CPC title