Method of manufacturing semiconductor device and substrate processing method

Patent metadata

Field	Value
Publication number	US-9437422-B2
Application number	US-201514706223-A
Country	US
Kind code	B2
Filing date	May 7, 2015
Priority date	Dec 9, 2011
Publication date	Sep 6, 2016
Grant date	Sep 6, 2016

Abstract

A method of manufacturing a semiconductor device is provided. The method includes: forming a film containing a predetermined element, oxygen, carbon and nitrogen on a substrate by repeating a cycle. The cycle includes: (a) supplying a source gas containing the predetermined element and a halogen element to the substrate; (b) supplying a first reactive gas containing three elements including carbon, nitrogen and hydrogen to the substrate; (c) supplying a nitriding gas as a second reactive gas to the substrate; (d) supplying an oxidizing gas as a third reactive gas to the substrate; and (e) supplying an hydrogen-containing gas as a fourth reactive gas to the substrate, wherein (a) through (e) are non-simultanelously performed.

First claim

What is claimed is:

1. A method of manufacturing a semiconductor device, comprising:
forming a film containing a predetermined element, oxygen, carbon and nitrogen on a substrate by repeating a cycle, the cycle comprising:
(a) supplying a source gas containing the predetermined element and a halogen element to the substrate;
(b) supplying a first reactive gas containing three elements including carbon, nitrogen and hydrogen to the substrate;
(c) supplying a nitriding gas as a second reactive gas to the substrate;
(d) supplying an oxidizing gas as a third reactive gas to the substrate; and
(e) supplying an hydrogen-containing gas as a fourth reactive gas to the substrate,
wherein (a) through (e) are non-simultaneously performed.

2. The method according to claim 1 , wherein the first reactive gas comprises at least one selected from the group consisting of amine and organic hydrazine.

3. The method according to claim 2 , wherein the second reactive gas comprises at least one selected from the group consisting of NH 3 gas, N 2 H 2 gas, N 2 H 4 gas and N 3 H 8 gas.

4. The method according to claim 3 , wherein the third reactive gas comprises at least one selected from the group consisting of O 2 gas, N 2 O gas, NO gas, NO 2 gas, O 3 gas, H 2 gas+O 2 gas, H 2 gas+O 3 gas, H 2 O gas, CO gas and CO 2 gas.

5. The method according to claim 4 , wherein the fourth reactive gas comprises H 2 gas.

6. The method according to claim 1 , wherein the predetermined element comprises silicon or a metal, and the halogen element comprises chlorine or fluorine.

7. The method according to claim 1 , wherein each of the first reactive gas, the second reactive gas, the third reactive gas and the fourth reactive gas is thermally activated under non-plasma condition and supplied to the substrate.

8. The method according to claim 1 , wherein the forming of the film is performed with the substrate accommodated in a process chamber, and
wherein an inner pressure of the process chamber when performing (b) is higher than those of the process chamber when performing (a) and (d).

9. The method according to claim 1 , wherein the forming of the film is performed with the substrate accommodated in a process chamber, and
wherein an inner pressure of the process chamber when performing (b) is higher than that of the process chamber when performing (d), and the inner pressure of the process chamber when performing (d) is higher than that of the process chamber when performing (a).

10. A substrate processing method comprising:
forming a film containing a predetermined element, oxygen, carbon and nitrogen on a substrate by repeating a cycle, the cycle comprising:
(a) supplying a source gas containing the predetermined element and a halogen element to the substrate;
(b) supplying a first reactive gas containing three elements including carbon, nitrogen and hydrogen to the substrate;
(c) supplying a nitriding gas as a second reactive gas to the substrate;
(d) supplying an oxidizing gas as a third reactive gas to the substrate; and
(e) supplying an hydrogen-containing gas as a fourth reactive gas to the substrate,
wherein (a) through (e) are non-simultaneously performed.

11. A method of manufacturing a semiconductor device, comprising:
forming a film containing a predetermined element, oxygen, carbon and nitrogen on a substrate by repeating a cycle, the cycle comprising:
(a) forming a first layer including the predetermined element, nitrogen and carbon by alternately performing, a predetermined number of times, supplying a source gas containing the predetermined element and a halogen element to the substrate; and supplying a first reactive gas containing three elements including carbon, nitrogen and hydrogen to the substrate;
(b) forming a second layer by supplying a nitriding gas as a second reactive gas to the substrate to nitride the first layer;
(c) forming a third layer by supplying an oxidizing gas as a third reactive gas to the substrate to oxidize the second layer; and
(d) forming a fourth layer by supplying an hydrogen-containing gas as a fourth reactive gas to the substrate to modify a surface of the third layer,
wherein (a) through (d) are non-simultaneously performed.

12. The method according to claim 11 , wherein the surface of the third layer modified in (d) to include more OH group than that of the third layer before modification.

Assignees

• Hitachi Int Electric Inc

Inventors

• Hirose Yoshiro
• Sano Atsushi

Classifications

• H10P14/69395

  the material containing zirconium, e.g. ZrO2 · CPC title

• H10P14/69394

  the material containing titanium, e.g. TiO2 · CPC title

• H10P14/69393

  the material containing tantalum, e.g. Ta2O5 · CPC title

• H10P14/69392

  the material containing hafnium, e.g. HfO2 · CPC title

• H10P14/69391

  the material containing aluminium, e.g. Al2O3 · CPC title