Electrophotographic photoconductor, production method thereof, and electrophotographic apparatus
US-2015346619-A1 · Dec 3, 2015 · US
Electrophotographic photoreceptor
US9436108B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9436108-B2 |
| Application number | US-201514640764-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 6, 2015 |
| Priority date | Mar 14, 2014 |
| Publication date | Sep 6, 2016 |
| Grant date | Sep 6, 2016 |
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Abstract
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An electrophotographic photoreceptor includes an electrically conductive support, a photosensitive layer formed on the electrically conductive support and a surface layer formed on the photosensitive layer. The surface layer contains a resin produced by polymerizing a cross-linkable polymerizable compound, N-type semiconductor fine particles and P-type semiconductor fine particles.
First claim
Opening claim text (preview).
What is claimed is: 1. An electrophotographic photoreceptor comprising an electrically conductive support, a photosensitive layer formed on the electrically conductive support and a surface layer formed on the photosensitive layer, wherein the surface layer contains a resin produced by polymerizing a cross-linkable polymerizable compound, N-type semiconductor fine particles and P-type semiconductor fine particles, and wherein in the surface layer, a mass ratio of the P-type semiconductor fine particles to the N-type semiconductor fine particles (part by mass of the P-type semiconductor fine particles/part by mass of the N-type semiconductor fine particles) is within a range of 0.1 to 0.8. 2. The electrophotographic photoreceptor according to claim 1 , wherein the N-type semiconductor fine particles are constituted by SnO 2 , and the P-type semiconductor fine particles are constituted by CuMO 2 , where M is Al, Ga or In. 3. The electrophotographic photoreceptor according to claim 1 , wherein the N-type semiconductor fine particles are constituted by any one of SnO 2 , TiO 2 and Al 2 O 3 . 4. The electrophotographic photoreceptor according to claim 1 , wherein the N-type semiconductor fine particles are constituted by SnO 2 . 5. The electrophotographic photoreceptor according to claim 1 , wherein a number average primary particle size of the N-type semiconductor fine particles is within the range of 1 to 300 nm. 6. The electrophotographic photoreceptor according to claim 1 , wherein the N-type semiconductor fine particles are contained in an amount of 30 to 250 parts by mass with respect to 100 parts by mass of a surface layer binder resin. 7. The electrophotographic photoreceptor according to claim 1 , wherein the P-type semiconductor fine particles are constituted by CuMO 2 , where M is Al, Ga or In. 8. The electrophotographic photoreceptor according to claim 1 , wherein the P-type semiconductor fine particles are constituted by CuAlO 2 . 9. The electrophotographic photoreceptor according to claim 1 , wherein a number average primary particle size of the P-type semiconductor fine particles is within the range of 1 to 300 nm. 10. The electrophotographic photoreceptor according to claim 1 , wherein the P-type semiconductor fine particles are contained in an amount of 1 to 250 parts by mass with respect to 100 parts by mass of a surface layer binder resin. 11. The electrophotographic photoreceptor according to claim 1 , wherein in the surface layer, the mass ratio of the P-type semiconductor fine particles to the N-type semiconductor fine particles (part by mass of the P-type semiconductor fine particles/part by mass of the N-type semiconductor fine particles) is within a range of 0.2 to 0.7.
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Classifications
comprising inorganic material · CPC title
- G03G5/14791Primary
Macromolecular compounds characterised by their structure, e.g. block polymers, reticulated polymers, or by their chemical properties, e.g. by molecular weight or acidity · CPC title
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Frequently asked questions
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- What does patent US9436108B2 cover?
- An electrophotographic photoreceptor includes an electrically conductive support, a photosensitive layer formed on the electrically conductive support and a surface layer formed on the photosensitive layer. The surface layer contains a resin produced by polymerizing a cross-linkable polymerizable compound, N-type semiconductor fine particles and P-type semiconductor fine particles.
- Who is the assignee on this patent?
- Konica Minolta Inc
- What technology area does this patent fall under?
- Primary CPC classification G03G5/14791. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue Sep 06 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).