Composition for forming photosensitive resist underlayer film

Patent metadata

Field	Value
Publication number	US-9436085-B2
Application number	US-201013516304-A
Country	US
Kind code	B2
Filing date	Dec 6, 2010
Priority date	Dec 16, 2009
Publication date	Sep 6, 2016
Grant date	Sep 6, 2016

Abstract

A composition for forming a resist underlayer film to be used in a lithography process, that includes: a polymer containing unit structures of Formula (1), Formula (2), and Formula (3):

the polymer being a polymer in which the unit structure of Formula (1) has a ratio of mole number (a) within a range of 0.20≦a≦0.90, the unit structure of Formula (2) has a ratio of mole number (b) within a range of 0.05≦b≦0.60, and the unit structure of Formula (3) has a ratio of mole number (c) within a range of 0.001≦c≦0.40, when a total mole number of all unit structures constituting the polymer is 1.0, and the polymer having a weight average molecular weight of 3,000 to 100,000; a crosslinkable compound; a photoacid generator; and a solvent.

First claim

The invention claimed is:

1. A method for forming a photoresist pattern to be used in a production of a semiconductor device, the method comprising:
applying a composition for forming a resist underlayer film on a semiconductor substrate followed by baking to form a resist underlayer film;
forming a photoresist film on the resist underlayer film;
exposing the semiconductor substrate coated with the resist underlayer film and the photoresist film; and
developing the photoresist film and the resist underlayer film after the exposure to be removed concurrently without dry etching,
wherein the composition for forming a resist underlayer film comprises:
a polymer (A) containing unit structures of Formula (1), Formula (2), and Formula (3):

wherein in above Formula (1), Formula (2), and Formula (3), each of R 1 , R 4 and R 6 is a hydrogen atom or a methyl group; in Formula (1), R 2 is a monovalent organic group, R 3 is a hydrogen atom or a C 1-12 alkyl group or acyl group, p is an integer of 0 to 3, q is an integer of 1 to 3, and (p+q) is an integer of 1 to 5; in Formula (2), R 5 is an acid-cleavable group; and in Formula (3), each of R 7 and R 8 is independently a hydrogen atom, or a substituted or unsubstituted C 1-12 alkyl group, or R 7 and R 8 are bonded to each other to form, together with a nitrogen atom bonded thereto, a group having a three- to fifteen-membered ring structure, and R 7 and R 8 are not a hydrogen atom at the same time; the polymer (A) being a polymer in which the unit structure of Formula (1) has a ratio of mole number (a) within a range of 0.20≦a≦0.90, the unit structure of Formula (2) has a ratio of mole number (b) with a range of 0.05≦b≦0.06, and the unit structure of Formula (3) has a ratio of mole number (c) within a range of 0.001≦c≦0.40, when a total mole number of all unit structures constituting the polymer is 1.0, and the polymer (A) having a weight average molecular weight of 3,000 to 100,000;
a crosslinkable compound (D) being a compound of Formula (4):

wherein in Formula (4), R 9 is a *—(CH 2 )nO— group or a *—(CH 2 O)n- group (where the linkage with * is bonded to an ether moiety), and n is an integer of 1 to 10;

a photoacid generator (E);
a solvent (F); and
a basic compound (G),
wherein the crosslinkable compound (D) is used in an amount ranging from 10% by mass to 70% by mass based on the total mass of the polymer (A), and
the composition includes 0.001 to 5 parts by mass of the basic compound (G) with respect to 100 parts by mass of the polymer (A).

2. A method for forming a photoresist pattern to be used in a production of a semiconductor device, the method comprising:
applying a composition for forming a resist underlayer film on a semiconductor substrate followed by baking to form a resist underlayer film;
forming a photoresist film on the resist underlayer film;
exposing the semiconductor substrate coated with the resist underlayer film and the photoresist film; and
developing the photoresist film and the resist underlayer film after the exposure to be removed concurrently without dry etching,
wherein the composition for forming a resist underlayer film comprises:
a polymer (B) containing unit structures of Formula (1) and Formula (2):

wherein in above Formula (1) and Formula (2), each of R 1 and R 4 is a hydrogen atom or a methyl group; in Formula (1), R 2 is a monovalent organic group, R 3 is a hydrogen atom or a C 1-12 alkyl group or acyl group, p is an integer of 0 to 3, q is an integer of 1 to 3, and (p+q) is an integer of 1 to 5; and in Formula (2), R 5 is an acid-cleavable group); the polymer (B) being a polymer in which the unit structure of Formula (1) has a ratio of mole number (a) within a range of 0.20≦a≦0.90, and the unit structure of Formula (2) has a ratio of mole number (b) within a range of 0.05≦b≦0.6, when a total mole number of all unit structures constituting the polymer is 1.0, and the polymer (B) having a weight average molecular weight of 3,000 to 100,000;
a polymer (C) containing unit structures of Formula (1) and Formula (3):

wherein in above Formula (1) and Formula (3), each of R 1 and R 6 is a hydrogen atom or a methyl group; in Formula (1), R 2 is a monovalent organic group, R 3 is a hydrogen atom or a C 1-12 alkyl group or acyl group, q is an integer of 1 to 3, p is an integer of 0 to 3, and (p+q) is an integer of 1 to 5; and in Formula (3), each of R 7 and R 8 is independently a hydrogen atom, or a substituted or unsubstituted C 1-12 alkyl group, or R 7 and R 8 are bonded to each other to form, together with a nitrogen atom bonded thereto, a group having a three- to fifteen-membered ring structure, and R 7 and R 8 are not a hydrogen atom at the same time; the polymer (C) being a polymer in which the unit structure of Formula (1) has a ratio of mole number (a) within a range of 0.20≦a≦0.90, and the unit structure of Formula (3) has a ratio of mole number (c) within a range of 0.001≦c≦0.40, when a total mole number of all unit structures constituting the polymer is 1.0, and the polymer (C) having a weight average molecular weight of 3,000 to 100,000;
a crosslinkable compound (D) being a compound of Formula (4):

wherein in Formula (4), R 9 is a *—(CH 2 )nO— group or a *—(CH 2 O)n- group (where the linkage with * is bonded to an ether moiety), and n is an integer of 1 to 10;

a photoacid generator (E);
a solvent (F); and
a basic compound (G), wherein
a ratio of the polymer (B) and the polymer (C) is 1:0.01 to 1:1 by weight,
the crosslinkable compound (D) is used in an amount ranging from 10% by mass to 70% by mass based on the total mass of the polymer (B) and the polymer (C), and
the composition includes 0.001 to 5 parts by mass of the basic compound (G) with respect to 100 parts by mass in a total mass of the polymer (B) and the polymer (C).

Assignees

• Horiguchi Yusuke
• Umezaki Makiko
• Fujitani Noriaki
• Nishimaki Hirokazu
• Kishioka Takahiro
• Hamada Takahiro
• Nissan Chemical Ind Ltd

Inventors

• Horiguchi Yusuke
• Umezaki Makiko
• Fujitani Noriaki
• Nishimaki Hirokazu
• Kishioka Takahiro
• Hamada Takahiro

Classifications

• C08F212/24

  Phenols or alcohols · CPC title

• G03F7/0955

  one of the photosensitive systems comprising a non-macromolecular photopolymerisable compound having carbon-to-carbon double bonds, e.g. ethylenic compounds · CPC title

• G03F7/038

  Macromolecular compounds which are rendered insoluble or differentially wettable (G03F7/075 takes precedence; macromolecular azides G03F7/012; macromolecular diazonium compounds G03F7/021) · CPC title

• C08F220/56

  Acrylamide; Methacrylamide · CPC title

• C08F212/14

  substituted by heteroatoms or groups containing heteroatoms · CPC title