Interlayer light wave coupling device

Patent metadata

Field	Value
Publication number	US-9435946-B2
Application number	US-201314345346-A
Country	US
Kind code	B2
Filing date	Oct 4, 2013
Priority date	Jul 23, 2013
Publication date	Sep 6, 2016
Grant date	Sep 6, 2016

Abstract

An interlayer light wave coupling device includes a substrate; a first core disposed on the substrate and having a first acute structure; a third core spatially set apart from the first core and having a second acute structure; and a second core disposed between the first core and the third core and having a smaller index of refraction than the first core and the third core. The acute structures of the first core and the third core are disposed so as to have no overlap as viewed from above.

First claim

The invention claimed is:

1. An interlayer light wave coupling device comprising: a substrate; a first core disposed on the substrate, the first core having a first acute structure and comprising hydrogenated amorphous silicon; a third core spatially set apart from the first core, the third core having a second acute structure and comprising hydrogenated amorphous silicon; and a second core disposed between the first core and the third core and having a smaller index of refraction than the first core and the third core, the first acute structure and the second acute structure being disposed so as to have no overlap as viewed from above, and wherein the acute structure has a sloped sidewall at least on one side.

2. The interlayer light wave coupling device according to claim 1 , wherein at least one core among the first core, the second core, and the third core is a step refractive index waveguide or a graded refractive index waveguide.

3. The interlayer light wave coupling device according to claim 1 , wherein a cladding for covering the second core and the third core is furthermore provided on the substrate.

4. The interlayer light wave coupling device according to claim 1 , wherein the second core is composed of any of SiON, SiO X , SiN, SiC, GaAs, and InP.

5. The interlayer light wave coupling device according to claim 1 , wherein the cladding is composed of epoxy resin or SiO 2 .

6. The interlayer light wave coupling device according to claim 1 , wherein both one side and another side form the acute structure have a sloped sidewall.

7. The interlayer light wave coupling device according to claim 1 , wherein the acute structure has a thickness that decreases in progress toward a distal end.

8. The interlayer light wave coupling device according to claim 7 , wherein the cross-sectional shape near the distal end of the acute structure is triangular.

9. The interlayer light wave coupling device according to claim 1 , wherein the substrate is a SOI substrate.

10. The interlayer light wave coupling device according to claim 1 , wherein the substrate is an optical integrated circuit substrate.

11. The interlayer light wave coupling device according to claim 2 , wherein a cladding for covering the second core and the third core is furthermore provided on the substrate.

12. The interlayer light wave coupling device according to claim 2 , wherein the second core is composed of any of SiON, SiO X , SiN, SiC, GaAs, and InP.

13. The interlayer light wave coupling device according to claim 11 , wherein the cladding is composed of epoxy resin or SiO 2 .

14. The interlayer light wave coupling device according to claim 2 , wherein the acute structure has a sloped sidewall at least on one side.

15. The interlayer light wave coupling device according to claim 2 , wherein both one side and another side form the acute structure have a sloped sidewall.

16. The interlayer light wave coupling device according to claim 2 , wherein the acute structure has a thickness that decreases in progress toward the distal end.

17. The interlayer light wave coupling device according to claim 16 , wherein the cross-sectional shape near a distal end of the acute structure is triangular.

18. The interlayer light wave coupling device according to claim 2 , wherein the substrate is a SOI substrate.

19. The interlayer light wave coupling device according to claim 2 , wherein the substrate is an optical integrated circuit substrate.

Assignees

• Nat Inst Advanced Ind Science & Tech

Inventors

• Sakakibara Youichi
• Takei Ryohei
• Mori Masahiko
• Kamei Toshihiro

Classifications

• G02B2006/12147

  Coupler · CPC title

• G02B2006/12038

  Glass (SiO2 based materials) · CPC title

• G02B2006/12061

  Silicon · CPC title

• G02B2006/12095

  Graded · CPC title

• G02B2006/12073

  Epoxy · CPC title