Radiation detector based on charged self-assembled monolayers on nanowire devices

Patent metadata

Field	Value
Publication number	US-9435896-B2
Application number	US-201313955740-A
Country	US
Kind code	B2
Filing date	Jul 31, 2013
Priority date	Jul 31, 2013
Publication date	Sep 6, 2016
Grant date	Sep 6, 2016

Abstract

Radiation detectors having nanowires with charged, radiation-labile coatings configured to change the electrical properties of nanowires are provided. In one aspect, a radiation detection device is provided. The radiation detector device includes at least one nanowire having a radiation-labile coating with charged moieties on a surface thereof, wherein the radiation-labile coating is configured to degrade upon exposure to radiation such that the charged moieties are cleaved from the radiation-labile coating upon exposure to radiation and thereby affect a transconductance of the nanowire.

First claim

What is claimed is:

1. A radiation detection device, comprising:
at least one nanowire having a radiation-labile coating on a surface thereof, wherein the radiation-labile coating comprises a monolayer of charged molecules having charged moieties tethered to the charged molecules and extending out from the surface of the nanowire, and wherein the radiation-labile coating is configured to degrade upon exposure to radiation such that the charged moieties are irreversibly cleaved from the radiation-labile coating upon exposure to radiation and thereby affect a transconductance of the nanowire.

2. The radiation detection device of claim 1 , wherein each of the charged molecules has 1) a binder group configured to bind a molecule of the charged molecules to the nanowire, 2) a radiation-labile linker group, and 3) a charged moiety.

3. The radiation detection device of claim 2 , wherein the nanowire comprises a semiconductor core covered with a shell layer comprising a material that selectively interacts with the binder group via an acid-base reaction such that the charged molecules are selectively bound only to the shell layer.

4. The radiation detection device of claim 3 , wherein the binder group comprises a hydroxamic acid or a phosphonic acid.

5. The radiation detection device of claim 3 , wherein the shell layer comprises hafnium oxide or aluminum oxide.

6. The radiation detection device of claim 2 , wherein the charged moiety comprises a pyridinium or an ammonium charged moiety.

7. The radiation detection device of claim 2 , wherein the radiation-labile linker group comprises an alkyl-sulfone.

8. A radiation detection device, comprising:
at least one transistor comprising:
a back gate formed in a wafer;
at least one nanowire on the wafer over the back gate, the nanowire having a radiation-labile coating on a surface thereof, wherein the radiation-labile coating comprises a monolayer of charged molecules having charged moieties tethered to the charged molecules and extending out from the surface of the nanowire, and wherein the radiation-labile coating is configured to degrade upon exposure to radiation such that the charged moieties are irreversibly cleaved from the radiation-labile coating upon exposure to radiation and thereby affect a transconductance of the nanowire; and
source and drain electrodes in contact with opposite ends of the nanowire.

9. The radiation detection device of claim 8 , wherein each of the charged molecules has 1) a binder group configured to bind a molecule of the charged molecules to the nanowire, 2) a radiation-labile linker group, and 3) a charged moiety.

10. The radiation detection device of claim 9 , wherein the charged moiety comprises a pyridinium or an ammonium charged moiety.

11. The radiation detection device of claim 9 , wherein the radiation-labile linker group comprises an alkyl-sulfone.

12. A method of forming a radiation detection device, the method comprising the steps of:
forming a back gate in a wafer;
depositing at least one nanowire on the wafer over the back gate;
forming source and drain electrodes in contact with opposite ends of the nanowire; and
covering a surface of the nanowire with a radiation-labile coating having charged moieties, wherein the radiation-labile coating comprises a monolayer of charged molecules having charged moieties tethered to the charged molecules and extending out from the surface of the nanowire, and wherein the radiation-labile coating is configured to degrade upon exposure to radiation such that the charged moieties are irreversibly cleaved from the radiation-labile coating upon exposure to radiation and thereby affect a transconductance of the nanowire.

13. The method of claim 12 , wherein each of the charged molecules has 1) a binder group configured to bind a molecule of the charged molecules to the nanowire, 2) a radiation-labile linker group, and 3) a charged moiety, wherein the nanowire comprises a semiconductor core covered with a shell layer comprising a material that selectively interacts with the binder group via an acid-base reaction, and wherein the step of covering the surface of the nanowire with the radiation-labile coating comprises the step of:
contacting the nanowire with a solution containing the charged molecules to enable interaction of the binder group of the molecules with the shell layer such that the molecules are selectively bound only to the shell layer and form the radiation-labile coating covering the surface of the nanowire.

14. The method of claim 13 , wherein the binder group comprises a hydroxamic acid or a phosphonic acid.

15. The method of claim 13 , wherein the shell layer comprises hafnium oxide or aluminum oxide.

16. A method for radiation detection, the method comprising the steps of:
obtaining a transconductance output signal from a radiation detection device at time t, wherein the radiation detection device comprises at least one nanowire having a radiation-labile coating on a surface thereof, wherein the radiation-labile coating comprises a monolayer of charged molecules having charged moieties tethered to the charged molecules and extending out from the surface of the nanowire, and wherein the radiation-labile coating is configured to degrade upon exposure to radiation such that the charged moieties are irreversibly cleaved from the radiation-labile coating upon exposure to radiation and thereby affect a transconductance of the nanowire;
comparing the transconductance output signal obtained from the radiation detection device at time t to an initial transconductance output signal of the radiation detection device;
determining whether the transconductance output signal obtained from the radiation detection device at time t is the same as the initial transconductance output signal of the radiation detection device; and
determining that the radiation detection device has not been exposed to radiation if the transconductance output signal obtained from the radiation detection device at time t is the same as the initial transconductance output signal of the radiation detection device, otherwise determining that the device has been exposed to radiation.

17. The method of claim 16 , further comprising the step of:
comparing the transconductance output signal obtained from the radiation detection device at time t with an uncharged transconductance output signal from the radiation detection device, which is the transconductance output signal obtained when none of the molecules in the coating retain their charged groups, to determine a dose of the radiation to which the radiation detection device has been exposed.

18. The method of claim 16 , wherein each of the charged molecules has 1) a binder group configured to bind a molecule of the charged molecules to the nanowire, 2) a radiation-labile linker group, and 3) a charged moiety.

19. The method of claim 18 , wherein the charged moiety comprises a pyridinium or an ammonium charged moiety.

20. The method of claim 18 , wherein the radiation-labile linker group comprises an alkyl-sulfone.

Assignees

• Globalfoundries Inc

Inventors

• Afzali-Ardakani Ali
• Lobez Comeras Jose M

Classifications

• H10F77/1437

  Quantum wires or nanorods · CPC title

• H10F30/301

  the devices being sensitive to very short wavelength, e.g. being sensitive to X-rays, gamma-rays or corpuscular radiation · CPC title

• Y10S977/954

  Of radiant energy · CPC title

• G01T1/1606 Primary

  with other specified detectors not provided for in the other subgroups of G01T1/16 · CPC title

• H01L31/035227

  Electricity · mapped topic