Methods of forming and treating polycrystalline diamond cutting elements, cutting elements so formed and drill bits equipped

US9435159B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9435159-B2
Application numberUS-201314064307-A
CountryUS
Kind codeB2
Filing dateOct 28, 2013
Priority dateJan 16, 2009
Publication dateSep 6, 2016
Grant dateSep 6, 2016

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A polycrystalline diamond compact comprising a diamond table is formed in a high-pressure, high-temperature process using a catalyst, the catalyst being substantially removed from the entirety of the diamond table, and the diamond table attached to a supporting substrate in a subsequent high-pressure, high-temperature process using a binder material differing at least in part from a material of the catalyst. The binder material is permitted to penetrate substantially completely throughout the diamond table from an interface with the substrate to and including a cutting surface, and the binder material is selectively removed from a region or regions of the diamond table by a conventional technique (e.g., acid leaching). Cutting elements so formed and drill bits equipped with such cutting elements are also disclosed.

First claim

Opening claim text (preview).

What is claimed is: 1. A method of forming a polycrystalline diamond element, the method comprising: forming a polycrystalline diamond compact from diamond particles at a temperature and a pressure sufficient to form diamond-to-diamond bonds in the presence of a catalyst comprising one of a Group VIII element or an alloy thereof; substantially removing the catalyst from the polycrystalline diamond compact; and introducing only a single material comprising a catalytic binder material differing at least in part from a material of the catalyst and comprising one of a Group VIII element different from the Group VIII element or an alloy thereof or an alloy of the different Group VIII element into interstitial voids between diamond particles of the polycrystalline diamond compact having the catalyst substantially removed therefrom at a temperature and a pressure sufficient to maintain stability of diamond-to-diamond bonds in the polycrystalline diamond compact to substantially fill at least a portion of the polycrystalline diamond compact with the binder material. 2. The method of claim 1 , wherein substantially removing the catalyst from the polycrystalline diamond compact is effected by leaching. 3. The method of claim 1 , further comprising forming the polycrystalline diamond compact on a supporting substrate, and removing the supporting substrate on which the polycrystalline diamond compact is formed after formation of the polycrystalline diamond compact. 4. The method of claim 1 , further comprising forming the polycrystalline diamond compact as a freestanding structure. 5. The method of claim 1 , further comprising removing the binder material from at least one region of the polycrystalline diamond compact. 6. The method of claim 5 , wherein the binder material is removed from the at least one region of the polycrystalline diamond compact by leaching. 7. The method of claim 5 , wherein removing the binder material from at least one region of the polycrystalline diamond compact comprises removing the binder material from at least one of at least a portion of a cutting face of the polycrystalline diamond compact and at least a portion of a side surface of the polycrystalline diamond compact. 8. The method of claim 1 , wherein at least one of the temperature and the pressure used to form the polycrystalline diamond compact is higher than a respective temperature or pressure used to introduce the binder material into the interstitial voids between diamond particles of the polycrystalline diamond compact having the catalyst substantially removed therefrom. 9. The method of claim 1 , wherein at least one of the temperature and pressure used to form the polycrystalline diamond compact is lower than a respective temperature or pressure used to introduce the binder material into the interstitial voids between diamond particles of the polycrystalline diamond compact having the catalyst substantially removed. 10. The method of claim 1 , wherein the pressure used to form the polycrystalline diamond compact is substantially different from the pressure used to introduce the binder material into the interstitial voids between diamond particles of the polycrystalline diamond compact having the catalyst substantially removed therefrom. 11. A polycrystalline diamond element, comprising: a polycrystalline diamond compact formed using a catalyst comprising one of a Group VIII element or an alloy thereof, the polycrystalline diamond compact being substantially free of the catalyst; wherein the polycrystalline diamond compact comprises, other than diamond, substantially only a single catalytic binder material differing at least in part from a material of the catalyst and comprising one of a Group VIII element different from the Group VIII element or the alloy thereof or an alloy of the different Group VIII element in at least a majority of interstitial voids between diamond particles of the polycrystalline diamond compact vacated upon removal of the catalyst. 12. The polycrystalline diamond element of claim 11 , wherein at least one region of the polycrystalline diamond compact is substantially free of the binder material. 13. The polycrystalline diamond element of claim 12 , wherein the at least one region comprises at least one of a region adjacent a cutting face and a region adjacent a side surface of the polycrystalline diamond compact. 14. A drill bit for drilling subterranean formations, comprising: a body; structure for connection of the body to a drill string; at least one cutting element secured to the body for engaging a subterranean formation, the at least one cutting element comprising: a polycrystalline diamond compact formed using a catalyst comprising one of a Group VIII element or an alloy thereof, the polycrystalline diamond compact being substantially free of the catalyst; wherein the polycrystalline diamond compact comprises, other than diamond, substantially only a single catalytic binder material differing at least in part from a material of the catalyst and comprising one of a Group VIII element different from the Group VIII element or the alloy thereof or an alloy of the different Group VIII element in at least a majority of interstitial voids between diamond particles of the polycrystalline diamond compact vacated upon removal of the catalyst. 15. The drill bit of claim 14 , wherein at least one region of the polycrystalline diamond compact is substantially free of the binder material. 16. The drill bit of claim 15 , wherein the at least one region comprises at least one of a region adjacent a cutting face and a region adjacent a side surface of the polycrystalline diamond compact. 17. A method of treating a polycrystalline diamond element, the method comprising: providing a polycrystalline diamond compact formed in the presence of a catalyst comprising one of a Group VIII element or an alloy thereof and having the catalyst substantially removed therefrom subsequent to formation; and introducing only a single material comprising a catalytic binder material differing at least in part from a material of the catalyst and comprising one of a Group VIII element different from the Group VIII element or an alloy of the different Group VIII element into interstitial voids between diamond particles of the polycrystalline diamond compact having the catalyst substantially removed therefrom at a temperature and a pressure sufficient to maintain stability of diamond-to-diamond bonds in the polycrystalline diamond compact to substantially fill at least a portion of the polycrystalline diamond compact with the binder material. 18. The method of claim 17 , further comprising removing the binder material from at least one region of the polycrystalline diamond compact. 19. The method of claim 18 , wherein removing the binder material from at least one region of the polycrystalline diamond compact comprises removing the binder material from at least one of at least a portion of a cutting face of the polycrystalline diamond compact and at least a portion of a side surface of the polycrystalline diamond compact. 20. The method of claim 17 , wherein at least one of the temperature and the pressure used to form the polycrystalline diamond compact is different than a respective temperature or pressure used to introduce the binder material into the interstitial voids between diamond particles of the polycrystalline diamond compact having the catalyst substantially removed therefrom.

Assignees

Inventors

Classifications

  • Diamond · CPC title

  • C04B35/52Primary

    based on carbon, e.g. graphite · CPC title

  • Percussion drill bits ({with helical conveying portion E21B10/445;} characterised by wear resisting parts E21B10/46) · CPC title

  • Alloys containing diamond {or cubic or wurtzitic boron nitride, fullerenes or carbon nanotubes} · CPC title

  • Pressure sintering · CPC title

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What does patent US9435159B2 cover?
A polycrystalline diamond compact comprising a diamond table is formed in a high-pressure, high-temperature process using a catalyst, the catalyst being substantially removed from the entirety of the diamond table, and the diamond table attached to a supporting substrate in a subsequent high-pressure, high-temperature process using a binder material differing at least in part from a material of…
Who is the assignee on this patent?
Baker Hughes Inc
What technology area does this patent fall under?
Primary CPC classification C04B35/52. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Sep 06 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).