Arrangement for manufacturing crystalline silicon ingots

Patent metadata

Field	Value
Publication number	US-9435052-B2
Application number	US-201214112858-A
Country	US
Kind code	B2
Filing date	Apr 18, 2012
Priority date	Apr 19, 2011
Publication date	Sep 6, 2016
Grant date	Sep 6, 2016

Abstract

The present invention relates to an arrangement for manufacturing crystalline silicon ingots by directional solidification, where the melt and carbonaceous structural parts of the crystallization furnace is protected from the fumes of the melt by applying a gas conduit which leads the fumes directly out of the directional solidification compartment of the furnace.

First claim

The invention claimed is:

1. An arrangement for manufacturing crystalline silicon ingots by directional solidification, the arrangement comprising:
at least one compartment with heat insulating side wall(s) configured to house a crucible, the at least one compartment comprising:
a heating device;
at least one inlet for supplying purge gas into the compartment;
one or more outlet(s) for extracting gas from the compartment;
a gas conduit formed by a continuous peripheral opening between:
an upper shield element placed at a distance above the crucible and which covers the horizontal cross-section area of the compartment to separate it in two overlaid sub-compartments where the upper sub-compartment has heating means, and
a lower shield element placed at a distance below the upper shield element and along the outer surface of the crucible, and which covers the cross-section area formed between the outer surface of the crucible and the inner surface of the side heat insulating wall(s) of the compartment; and

a flow constriction located in the gas conduit or the one or more outlet(s), providing a cross-section area, A, in the gas conduit or one or more outlet(s), equal to A=P·d, where P is a perimeter length of an upper edge of the crucible in mm and d is between 0.5 and 50 mm,
wherein the one or more inlet(s) for supplying purge gas is (are) located above the crucible, and located on the heat insulating side wall(s) of the compartment between the upper and lower shield elements.

2. Arrangement according to claim 1 , wherein d is between 2 and 10 mm.

3. Arrangement according to claim 1 , wherein
the upper shield element is made of one plate or sheet forming a substantially horizontally oriented partition wall or ceiling, and
the lower shield element is made of one plate or sheet element forming a substantially horizontally oriented partition wall or platform projecting from the outer surface of the crucible wall along the entire periphery of the crucible and thus separating the inner space of the compartment into two over-laid sub-compartments along the periphery of the compartment.

4. Arrangement according to claim 3 , wherein the lower and upper shield elements are each made of one rigid plate or a flexible sheet of a material able to withstand the temperatures and chemical environment found in silicon crystallisation furnaces formed by one continuous structural element, or they are made of more than one rigid plate or flexible sheet elements which together covers the intended cross-sectional area of the inner space of the compartment.

5. Arrangement according to claim 4 , wherein the sheets are made of one of the following materials: carbon fibre-reinforced silicon carbide such as C—C/SiC or C/SiC-composites, silicon carbide fibre composite SiC/SiC, carbon fibre-reinforced carbon with or without a SiC-coating, or graphite coated or uncoated with SiC.

6. Arrangement according to claim 5 , wherein the sheets are carbon fibre-reinforced carbon coated with SiC, wherein
the thickness of the carbon fibre-reinforced carbon sheets is in the range of 1-10 mm, and
the thickness of the SiC-coating is in the range of 10-200 μm.

7. Arrangement according to claim 6 , wherein
a thickness of the carbon fibre-reinforced carbon sheets is in a range of 2-8 mm, and
a thickness of the SiC-coating is in a range of 20-150 μm.

8. Arrangement according to claim 3 , wherein the flow constriction is formed by the gap or distance between the upper edge of the crucible and the upper shield element of the gas guide forming a continuous slot between them with a cross-sectional area, A, of A=P·d, where P is the perimeter length of the upper edge of the crucible in mm and d is between 2 and 50 mm.

9. Arrangement according to claim 3 , wherein the flow constriction is formed by the gap or distance between the upper edge of a circumferential side support and the and the upper shield element of the gas guide forming a continuous slot between them with a cross-sectional area, A, of A=P·d, where P is the perimeter length of the upper edge of the crucible in mm and d is between 2 and 50 mm, and where the lower shield element is placed along the outer surface of the circumferential side support and covers the cross-section area formed between the outer surface of the circumferential side support and the inner surface of the side heat insulating wall(s) of the compartment.

10. Arrangement according to claim 3 , wherein the flow constriction is formed by applying a circumferential hood attached to and extending downward from the upper shield element to a distance above the lower shield element forming a continuous slot along the periphery of the circumferential hood at a distance from the crucible wall, and where the slot has a cross-sectional area, A, of A=P·d, where P is the perimeter length of the upper edge of the crucible in mm and d is between 2 and 50 mm.

11. Arrangement according to claim 3 , wherein the flow constriction is formed by the gas outlet by having a gas outlet with a cross-sectional area, A, of A=P·d, where P is the perimeter length of the upper edge of the crucible in mm and d is between 2 and 50 mm.

12. Arrangement according to claim 9 , wherein the circumferential side support is made of plate elements of one of the following materials: carbon fibre-reinforced silicon carbide ceramics such as C—C/SiC or C/SiC-composites, silicon carbide fibre composite SiC/SiC, carbon fibre-reinforced carbon CFRC with or without a SiC-coating, or graphite coated or uncoated with SiC, or a combination thereof.

13. Arrangement according to claim 1 , wherein the protection of the surface of the heat insulating wall between the upper and lower shield element is obtained by covering the surface with a material which is able to withstand the heat and chemical environment in the compartment.

14. Arrangement according to claim 13 , wherein the covering material is plate elements of one of the following materials: carbon fibre-reinforced silicon carbide ceramics such as C—C/SiC or C/SiC-composites, silicon carbide fibre composite SiC/SiC, carbon fibre-reinforced carbon CFRC with or without a SiC-coating, or graphite coated or uncoated with SiC, or a combination thereof.

15. Arrangement according to claim 13 , wherein the covering material is of the same material and made an integral part of the upper and lower shield element, respectively.

16. Arrangement according to claim 3 , wherein the arrangement also comprises a condensation trap placed at the outlet for extracting gas from the compartment in the form of a cold mesh or grid made of metal.

17. Arrangement according to claim 2 , wherein
the upper shield element is made of one plate or sheet forming a substantially horizontally oriented partition wall or ceiling, and
the lower shield element is made of one plate or sheet element forming a substantially horizontally oriented partition wall or platform projecting from the outer surface of the crucible wall along the entire periphery of the crucible and thus separating the inner space of the compartment into two over-laid sub-compartments along the periphery of the compartment.

18. Arrangement according to claim 4 , wherein the flow constriction is formed by the gap or distance between the upper edge of the crucible and the upper shield element of the gas guide forming a continuous slot between them with a cross-sectional area, A, of A=P·d, where P is the perimeter length of the upper edge of the crucible in mm and d is between 2 and 50 mm.

19. Arrangement according to cl

Assignees

• Vladimirov Egor
• Teixeira Alexandre
• Johansen Kai
• Homayonifar Pouria
• Rec Solar Pte Ltd

Inventors

• Vladimirov Egor
• Teixeira Alexandre
• Johansen Kai
• Homayonifar Pouria

Classifications

• Y10T117/1092

  Shape defined by a solid member other than seed or product [e.g., Bridgman-Stockbarger] · CPC title

• C30B29/06

  Silicon · CPC title

• C30B11/00 Primary

  Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method (C30B13/00, C30B15/00, C30B17/00, C30B19/00 take precedence; under a protective fluid C30B27/00) · CPC title

• C30B11/003

  Heating or cooling of the melt or the crystallised material · CPC title