Cover glass and method for producing cover glass

US9434644B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9434644-B2
Application numberUS-201113247627-A
CountryUS
Kind codeB2
Filing dateSep 28, 2011
Priority dateSep 30, 2010
Publication dateSep 6, 2016
Grant dateSep 6, 2016

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

The disclosed cover glass is produced by etching a glass substrate that has been formed by a down-drawing process, and chemically strengthening the glass substrate to provide the glass substrate with a compressive-stress layer on the principal surfaces thereof. The glass substrate contains, as components thereof, 50% to 70% by mass of SiO 2 , 5% to 20% by mass of Al 2 O 3 , 6% to 30% by mass of Na 2 O, and 0% to less than 8% by mass of Li 2 O. The glass substrate may also contain 0% to 2.6% by mass of CaO, if necessary. The glass substrate has an etching characteristic in which the etching rate is at least 3.7 μm/minute in an etching environment having a temperature of 22° C. and containing hydrogen fluoride with a concentration of 10% by mass.

First claim

Opening claim text (preview).

What is claimed is: 1. A cover glass comprising: a plate-shaped glass substrate having a compressive-stress layer on principal surfaces thereof, the glass substrate containing, as components thereof, 50% to 67% by mass of SiO 2 , 5% to 20% by mass of Al 2 O 3 , 10% to 15.4% by mass of Na 2 O, 0% to 1% by mass of Li 2 O, 0% to less than 4% by mass of K 2 O, substantially no CaO, 0% to less than 0.1% by mass of ZrO 2 , 0% to 1% by mass of TiO 2 , 0% to 5% by mass of B 2 O 3 , and greater than 1% to 15% by mass of MgO, the ratio of the content of K 2 O to R 2 O (K 2 O/R 2 O) of the substrate being from 0 to 0.08, and the ratio of the content of ZrO 2 and TiO 2 to SiO 2 ((ZrO 2 +TiO 2 )/SiO 2 ) of the substrate being from 0 to 0.01, and if the content by percentage of the SiO 2 is X % by mass and the content by percentage of the Al 2 O 3 is Y % by mass, X-½·Y is 45% to 57.5% by mass. 2. The cover glass according to claim 1 , wherein the compressive-stress layer is formed on an end surface of the cover glass. 3. The cover glass according to claim 1 , wherein the glass substrate has an etching characteristic in which an etching rate is at least 3.7 μm/minute in an etching environment having a temperature of 22° C. and containing hydrogen fluoride with a concentration of 10% by mass. 4. The cover glass according to claim 1 , wherein the glass substrate is formed into a plate-like shape by a down-drawing process. 5. The cover glass according to claim 1 , wherein the glass substrate contains substantially no K 2 O. 6. The cover glass according to claim 1 , wherein the glass substrate has a strain point of 580° C. or more. 7. The cover glass according to claim 1 , wherein the depth of the compressive stress layer range is 47.7 μm to 90.0 μm.

Assignees

Inventors

Classifications

  • C03C21/002Primary

    to perform ion-exchange between alkali ions (C03C21/005 takes precedence) · CPC title

  • for making a smooth surface · CPC title

  • containing calcium oxide, e.g. common sheet or container glass · CPC title

  • Surface treatment of glass, not in the form of fibres or filaments, by etching (etching or surface-brightening compositions, in general C09K13/00) · CPC title

  • containing aluminium oxide or an iron compound · CPC title

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What does patent US9434644B2 cover?
The disclosed cover glass is produced by etching a glass substrate that has been formed by a down-drawing process, and chemically strengthening the glass substrate to provide the glass substrate with a compressive-stress layer on the principal surfaces thereof. The glass substrate contains, as components thereof, 50% to 70% by mass of SiO 2 , 5% to 20% by mass of Al 2 O 3 , 6% to 30% by mass of…
Who is the assignee on this patent?
Koyama Akihiro, Morishita Mikiko, Ami Satoshi, and 4 more
What technology area does this patent fall under?
Primary CPC classification C03C21/002. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Sep 06 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).