Power semiconductor module and power converter using the same

Patent metadata

Field	Value
Publication number	US-9433134-B2
Application number	US-201214126955-A
Country	US
Kind code	B2
Filing date	Jun 15, 2012
Priority date	Jun 24, 2011
Publication date	Aug 30, 2016
Grant date	Aug 30, 2016

Abstract

A power semiconductor module includes a first package having an upper arm circuit section, a second package having a lower arm circuit section, a metal case having a storage space to store the first package and the second package and an opening connecting with the storage space, and an intermediate connecting conductor to couple the upper arm circuit section with the lower arm circuit section; the case includes a first radiating section and a second radiating section facing the first radiating section through the storage space; the first package is arranged so that the arrangement direction of the first and second packages may be parallel to the respective surfaces facing the first and second radiating sections; and the intermediate connecting conductor couples an emitter side terminal extending from the first package with a collector side terminal extending from the second package in the storage space.

First claim

The invention claimed is:

1. A power semiconductor module comprising:
a first package having an upper arm circuit section constituting an inverter circuit;
a second package having a lower arm circuit section constituting an inverter circuit;
a metal case having a storage space to store the first package and the second package and an opening connecting with the storage space; and
an intermediate connecting conductor to couple the upper arm circuit section with the lower arm circuit section, wherein:
the metal case includes a first radiating section and a second radiating section facing the first radiating section through the storage space,
the first package includes a first semiconductor chip, a first conductor plate and a second conductor plate to interpose the first semiconductor chip, a first collector-side terminal coupled with the first conductor plate, a first emitter-side terminal coupled with the second conductor plate, and a first sealant to seal parts of the first conductor plate and the second conductor plate and the first semiconductor chip,
the second package includes a second semiconductor chip, a third conductor plate and a fourth conductor plate to interpose the second semiconductor chip, a second collector-side terminal coupled with the third conductor plate, a second emitter-side terminal coupled with the fourth conductor plate, and a second sealant to seal parts of the third conductor plate and the fourth conductor plate and the second semiconductor chip,
further, the first package is arranged so that the arrangement direction of the first package and the second package are parallel to the respective surfaces facing the first radiating section and the second radiating section,
the first collector-side terminal and the second emitter-side terminal protrude outside the metal case from the opening of the metal case,
the intermediate connecting conductor couples the first emitter-side terminal with the second collector-side terminal in the storage space of the metal case, and
the first sealant and the second sealant are provided separately from each other.

2. The power semiconductor module according to claim 1 , wherein either of the first radiating section and the second radiating section includes a first thin-wall section surrounding a first section facing the first package and being formed so as to be thinner than the first radiating section and a second thin-wall section surrounding a second section facing the second package and being formed so as to be thinner than the second radiating section.

3. The power semiconductor module according to claim 1 , wherein the power semiconductor module includes a bus bar connector having a positive-electrode-side bus bar coupled with the first collector-side terminal and a negative-electrode-side bus bar being coupled with the second emitter-side terminal and having a part facing the positive-electrode-side bus bar through an insulating member.

4. The power semiconductor module according to claim 1 , wherein the intermediate connecting conductor is arranged on a side opposite to the opening of the metal case through the first package and the second package.

5. A power converter comprising:
the power semiconductor module according to claim 1 , and
a cooling jacket having a flow channel to feed a coolant, wherein:
the metal case is fixed to the cooling jacket so that the first radiating section and the second radiating section are arranged in the flow channel, and
the first radiating section and the second radiating section directly touch the coolant.

Assignees

• Tokuyama Takeshi
• Nakatsu Kinya
• Saito Ryuichi
• Satoh Toshiya
• Suwa Tokihito
• Hitachi Automotive Systems Ltd

Inventors

• Tokuyama Takeshi
• Nakatsu Kinya
• Saito Ryuichi
• Satoh Toshiya
• Suwa Tokihito

Classifications

• H05K7/209

  Heat transfer by conduction from internal heat source to heat radiating structure (H05K7/20909 takes precedence) · CPC title

• H02M7/003

  Constructional details, e.g. physical layout, assembly, wiring or busbar connections · CPC title

• H10W90/736

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W74/00

  Encapsulations, e.g. protective coatings · CPC title

• H10W40/47

  by flowing liquids, e.g. forced water cooling · CPC title