High-frequency circuit package and sensor module

Patent metadata

Field	Value
Publication number	US-9433080-B2
Application number	US-201113075779-A
Country	US
Kind code	B2
Filing date	Mar 30, 2011
Priority date	Sep 5, 2008
Publication date	Aug 30, 2016
Grant date	Aug 30, 2016

Abstract

Shielding of high-frequency circuits is achieved using a simple and inexpensive configuration not using any lid. A high-frequency circuit mounting substrate ( 20 ) is disposed, on an underside surface layer of which are disposed high-frequency circuits ( 21 and 22 ) and is formed a first grounding conductor that has same electric potential as grounding conductors of the high-frequency circuits and that surrounds the high-frequency circuits. A mother control substrate ( 3 ) is disposed, on which the high-frequency circuit mounting substrate ( 20 ) is mounted in such a way that the high-frequency circuits are sandwiched therebetween and on which a second grounding conductor is formed in a region facing the high-frequency circuits. Plural first lands are formed on the first grounding conductor of the high-frequency circuit mounting substrate ( 20 ) to surround the high-frequency circuits. Plural second lands are formed that are electrically connected to the second grounding conductor at positions on a surface layer of the mother control substrate ( 3 ) which face the first lands. Plural solder balls ( 30 G 2 ) are disposed for connecting the first lands and the second lands. The high-frequency circuits are housed in pseudo shielding cavities surrounded by the solder balls ( 30 G 2 ), the grounding conductors of the high-frequency circuits, and the first and second grounding conductors.

First claim

What is claimed is:

1. A high-frequency circuit package comprising:
a first dielectric substrate having a high-frequency circuit, which includes a high-frequency semiconductor chip disposed on an underside surface layer, and having a first grounding conductor that has same electric potential as a grounding conductor of the high-frequency circuit, the first grounding conductor being formed on the underside surface layer to surround the high-frequency circuit and being connected to the grounding conductor of the high-frequency circuit via a plurality of through-holes; and
a second dielectric substrate, on which the first dielectric substrate is mounted, the second dielectric substrate having a line formed thereon for supplying a signal to drive the high-frequency circuit and having a second grounding conductor formed in a region that faces the high-frequency circuit over the high-frequency circuit, wherein
the first dielectric substrate has a plurality of first lands arranged on the first grounding conductor to surround the high-frequency circuit, and a plurality of first signal lands transmitting a DC bias or control signal for driving the high-frequency circuit,
the second dielectric substrate has a plurality of second lands electrically connected to the second grounding conductor and formed at positions on a surface layer of the second dielectric substrate which face the plurality of first lands, and a plurality of second signal lands connected to a line for supplying the signal for driving the high-frequency circuit and provided at positions which face the plurality of first signal lands,
a plurality of conductive connecting members are disposed for connecting between the first lands and the second lands and between the first signal lands and the second signal lands,
the high-frequency circuit is housed in a pseudo shielding cavity that is surrounded by the plurality of conductive connecting members, the first and second grounding conductors, and the grounding conductor of the high-frequency circuit,
the grounding conductor of the high-frequency circuit is formed in a region on an inner layer of the first dielectric substrate.

2. The high-frequency circuit package according to claim 1 , wherein the conductive connecting members are solder balls.

3. The high-frequency circuit package according to claim 1 , wherein the high-frequency semiconductor chip is disposed on the underside surface layer of the first dielectric substrate via a bump.

4. The high-frequency circuit package according to claim 3 , wherein the high-frequency circuit is housed in a non-airtight manner in between the first dielectric substrate and the second dielectric substrate.

5. A sensor module comprising: the high-frequency circuit package according to claim 3 ; and an antenna that is disposed on the second dielectric substrate on the opposite side of the mounting surface for the first dielectric substrate and that is connected to the waveguide.

6. The high-frequency circuit package according to claim 1 , wherein the second grounding conductor is formed on a surface layer of the second dielectric substrate.

7. The high-frequency circuit package according to claim 1 , wherein the second grounding conductor is formed on an inner layer of the second dielectric substrate.

8. The high-frequency circuit package according to claim 1 , wherein intervals of the first lands and intervals of the second lands are equal to or smaller than ¼ of the free space propagation wavelength for a high-frequency signal.

9. The high-frequency circuit package according to claim 1 , wherein the second land is formed as a portion at which the second grounding conductor pattern is exposed, which is formed by not providing an insulating material applied on the second grounding conductor pattern.

10. The high-frequency circuit package according to claim 1 , wherein the second grounding conductor is formed over the high-frequency semiconductor chip.

11. A high-frequency circuit package comprising:
a first dielectric substrate as a resin substrate having a high-frequency circuit disposed on an underside surface layer and having a first grounding conductor that has same electric potential as a grounding conductor of the high-frequency circuit, the first grounding conductor being formed on the underside surface layer to surround the high-frequency circuit and being connected to the grounding conductor of the high-frequency circuit via a plurality of through-holes; and
a second dielectric substrate as a resin substrate, on which the first dielectric substrate is mounted in such a way that the high-frequency circuit is sandwiched therebetween, the second dielectric substrate having a second grounding conductor formed in a region that faces the high-frequency circuit over the high-frequency circuit, wherein
a plurality of first lands are formed on the first grounding conductor of the first dielectric substrate and arranged to surround the high-frequency circuit, and a plurality of second lands are electrically connected to the second grounding conductor and are formed at positions on a surface layer of the second dielectric substrate which face the plurality of first lands,
a plurality of conductive connecting members are disposed for connecting between the first lands and the second lands,
the high-frequency circuit is comprised of a semiconductor chip and is formed and disposed on the underside surface layer of the first dielectric substrate, the plurality of first lands and the plurality of conductive connecting members are disposed to surround the high-frequency circuit, and the high-frequency circuit is housed in a pseudo shielding cavity surrounded by the plurality of conductive connecting members, the first and second grounding conductors, and the grounding conductor of the high-frequency circuit,
the grounding conductor of the high-frequency circuit is formed in a region on an inner layer of the first dielectric substrate.

12. The high-frequency circuit package according to claim 11 , wherein
a plurality of the high-frequency circuits are formed and disposed on the underside surface layer of the first dielectric substrate,
the plurality of first lands and the plurality of conductive connecting members are disposed to individually surround each of the high-frequency circuits, and
the high-frequency circuits are housed in the pseudo shielding cavities that are individually defined, respectively.

13. The high-frequency circuit package according to claim 11 , wherein the second grounding conductor is formed on a surface layer of the second dielectric substrate.

14. The high-frequency circuit package according to claim 11 , wherein the second grounding conductor is formed on an inner layer of the second dielectric substrate.

15. The high-frequency circuit package according to claim 11 , wherein intervals of the first lands and intervals of the second lands are equal to or smaller than ¼ of the free space propagation wavelength for a high-frequency signal.

16. The high-frequency circuit package according to claim 11 , wherein the second land is formed as a portion at which the second grounding conductor pattern is exposed, which is formed by not providing an insulating material applied on the second grounding conductor pattern.

17. The high-frequency circuit package according to claim 11 , wherein the second grounding conductor is formed over the high-frequency semiconductor chip.

Assignees

• Suzuki Takuya
• Mitsubishi Electric Corp

Inventors

• Suzuki Takuya

Classifications

• H10W90/724

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W90/721

  of bump connectors · CPC title

• H10W90/701

  characterised by the relative positions of pads or connectors relative to package parts · CPC title

• H10W72/00

  Interconnections or connectors in packages · CPC title

• H10W44/248

  for antennas · CPC title