Electric power semiconductor device

Patent metadata

Field	Value
Publication number	US-9433075-B2
Application number	US-201314417370-A
Country	US
Kind code	B2
Filing date	Aug 9, 2013
Priority date	Aug 27, 2012
Publication date	Aug 30, 2016
Grant date	Aug 30, 2016

Abstract

An electric power semiconductor device includes a heat transfer plate. A printed wire board is spaced a predetermined gap apart from the heat transfer plate. An opening portion is provided in the vicinity of an electrode strip formed on the outer side of the printed wire board. An electric power semiconductor element is disposed between the heat transfer plate and the printed wire board, and adhered to the heat transfer plate. A wiring member has one end bonded to a first bonding portion of a main power electrode of the electric power semiconductor element, and the other end is bonded to a second bonding portion. At least part of the second bonding portion is included in a space that extends from the main power electrode to the printed wire board, and the first bonding portion is included in a space that extends from the opening portion.

First claim

The invention claimed is:

1. An electric power semiconductor device comprising:
a heat transfer plate, to the side opposite to the mounting side of which a heat radiation material is adhered through an insulating layer;
a printed wire board that is disposed in such a way as to face, with a predetermined gap, the mounting side of the heat transfer plate, on the side of which, opposite to the side facing the heat transfer plate, an electrode strip is formed, and in the vicinity of the electrode strip of which, an opening portion is provided;
an electric power semiconductor element that is disposed between the heat transfer plate and the printed wire board and whose rear side is adhered to the mounting side of the heat transfer plate; and
a wiring member, one end of which is bonded to a first bonding portion of an element electrode formed on the front side of the electric power semiconductor element and the other end of which is bonded to a second bonding portion of the electrode strip,
wherein the electrode strip and the opening portion are arranged in such a way that at least part of the second bonding portion is included in a space that extends from the element electrode to the printed wire board in a direction vertical to the mounting side and in such a way that the first bonding portion is included in a space that extends from the opening portion to the element electrode in the vertical direction.

2. The electric power semiconductor device according to claim 1 , wherein the wiring member is a bonding wire, and the opening portion has a region necessary for bonding the bonding wire to the first bonding portion.

3. The electric power semiconductor device according to claim 1 , wherein the wiring member is an electrode member in which a flat portion to be ultrasonic-bonded to the first bonding portion and a terminal portion to be soldered with the second bonding portion are provided.

4. The electric power semiconductor device according to claim 1 , wherein a supporting portion that rises from the mounting side to the printed wire board and supports the printed wire board is formed at each of both ends, of the heat transfer plate, that face each other.

5. The electric power semiconductor device according to claim 2 , wherein a supporting portion that rises from the mounting side to the printed wire board and supports the printed wire board is formed at each of both ends, of the heat transfer plate, that face each other.

6. The electric power semiconductor device according to claim 4 , wherein at least one of the supporting portions formed at both ends that face each other is provided with a protrusion that penetrates a through-hole provided in the printed wire board and is exposed at a second side.

7. The electric power semiconductor device according to claim 5 , wherein at least one of the supporting portions formed at both ends that face each other is provided with a protrusion that penetrates a through-hole provided in the printed wire board and is exposed at a second side.

8. The electric power semiconductor device according to claim 1 ,
wherein the electric power semiconductor element is a vertical semiconductor element, also on the rear side of which an electrode is formed, and
wherein a wiring member electrically connects the heat transfer plate with another bonding portion of the electrode strip through the opening portion.

9. The electric power semiconductor device according to claims 2 ,
wherein the electric power semiconductor element is a vertical semiconductor element, also on the rear side of which an electrode is formed, and
wherein a wiring member electrically connects the heat transfer plate with another bonding portion of the electrode strip through the opening portion.

10. The electric power semiconductor device according to claim 4 ,
wherein the electric power semiconductor element is a vertical semiconductor element, also on the rear side of which an electrode is formed, and
wherein an electrode portion formed on the printed wire board and the supporting portion are electrically connected with each other.

11. The electric power semiconductor device according to claim 5 ,
wherein the electric power semiconductor element is a vertical semiconductor element, also on the rear side of which an electrode is formed, and
wherein an electrode portion formed on the printed wire board and the supporting portion are electrically connected with each other.

12. The electric power semiconductor device according to claim 6 ,
wherein the electric power semiconductor element is a vertical semiconductor element, also on the rear side of which an electrode is formed, and
wherein an electrode portion formed on the printed wire board and the supporting portion are electrically connected with each other.

13. The electric power semiconductor device according to claim 7 ,
wherein the electric power semiconductor element is a vertical semiconductor element, also on the rear side of which an electrode is formed, and
wherein an electrode portion formed on the printed wire board and the supporting portion are electrically connected with each other.

14. The electric power semiconductor device according to claim 1 ,
wherein the heat transfer plate is formed of a plurality of independent plates that are insulated from one another,
wherein respective electric power semiconductor elements including electric power semiconductor elements, to each of which a wiring member is bonded, are mounted on the plurality of independent plates, and
wherein among the plurality of electric power semiconductor elements, the electric power semiconductor elements mounted on different independent plates are electrically connected with each other by use of another wiring member disposed between the heat transfer plate and the printed wire board.

15. The electric power semiconductor device according to claim 2 ,
wherein the heat transfer plate is formed of a plurality of independent plates that are insulated from one another,
wherein respective electric power semiconductor elements including electric power semiconductor elements, to each of which a wiring member is bonded, are mounted on the plurality of independent plates, and
wherein among the plurality of electric power semiconductor elements, the electric power semiconductor elements mounted on different independent plates are electrically connected with each other by use of another wiring member disposed between the heat transfer plate and the printed wire board.

16. The electric power semiconductor device according to claim 1 , wherein the electric power semiconductor element is formed of a wide bandgap semiconductor material.

17. The electric power semiconductor device according to claim 2 , wherein the electric power semiconductor element is formed of a wide bandgap semiconductor material.

18. The electric power semiconductor device according to claim 16 , wherein the wide bandgap semiconductor material is any one of a silicon carbide, a gallium-nitride material, and a diamond.

19. The electric power semiconductor device according to claim 17 , wherein the wide bandgap semiconductor material is any one of a silicon carbide, a gallium-nitride material, and a diamond.

Assignees

• Mitsubishi Electric Corp

Inventors

• Fujino Junji
• Yoneda Yutaka
• Onishi Yoshitaka
• Sugawara Masafumi

Classifications

• H10W72/07654

  changes in dispositions · CPC title

• H10W90/00

  Package configurations · CPC title

• H10W72/073

  of die-attach connectors · CPC title

• H10W99/00

  Subject matter not provided for in other groups of this subclass · CPC title

• H10W72/075

  of bond wires · CPC title