Semiconductor device

Patent metadata

Field	Value
Publication number	US-9432016-B2
Application number	US-201514594256-A
Country	US
Kind code	B2
Filing date	Jan 12, 2015
Priority date	Sep 30, 2011
Publication date	Aug 30, 2016
Grant date	Aug 30, 2016

Abstract

Provided is a semiconductor device exemplified by an inverter circuit and a shift register circuit, which is characterized by a reduced number of transistors. The semiconductor device includes a first transistor, a second transistor, and a capacitor. One of a source and a drain of the first transistor is electrically connected to a first wiring, and the other thereof is electrically connected to a second wiring. One of a source and a drain of the second transistor is electrically connected to the first wiring, a gate of the second transistor is electrically connected to a gate of the first transistor, and the other of the source and the drain of the second transistor is electrically connected to one electrode of the capacitor, while the other electrode of the capacitor is electrically connected to a third wiring. The first and second transistors have the same conductivity type.

First claim

What is claimed is:

1. A method for driving a semiconductor device comprising a first transistor and a second transistor, the method comprising:
setting a potential of a second terminal of the second transistor to be a potential which turns on the second transistor by means of capacitive coupling;
setting a gate of the second transistor in a floating state; and
changing the potential of the second terminal of the second transistor by supplying a potential VDD to a first termin…

Assignees

• Semiconductor Energy Lab

Inventors

• Umezaki Atsushi

Classifications

• H03B1/00

  Electricity · mapped topic

• G09G3/14

  Physics · mapped topic

• G09G2300/0426

  Physics · mapped topic

• H03K17/6871 Primary

  Electricity · mapped topic

• G09G3/32 Primary

  Physics · mapped topic