Doherty power amplifier with tunable impedance load

US9431969B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9431969-B2
Application numberUS-201314103089-A
CountryUS
Kind codeB2
Filing dateDec 11, 2013
Priority dateDec 11, 2012
Publication dateAug 30, 2016
Grant dateAug 30, 2016

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

Radio frequency (RF) amplification devices are disclosed that include Doherty amplification circuits and control circuits along with methods of operating the same. In one embodiment, the Doherty amplification circuit includes a quadrature coupler having an isolation port and a tunable impedance load coupled to the isolation port and configured to provide a tunable impedance. The control circuit is configured to tune the tunable impedance of the tunable impedance load at the isolation port dynamically as a function of the RF power of the Doherty amplification circuit. In this manner, the control circuit can provide dynamic load modulation, thereby increasing the power efficiency of the Doherty amplification circuit, particularly at backed-off power levels. The load modulation provided by the control circuit also allows the Doherty amplification circuit to provide broadband amplification in various RF communication bands.

First claim

Opening claim text (preview).

What is claimed is: 1. A radio frequency (RF) amplification device comprising: a Doherty amplification circuit that functions as a Doherty amplifier and configured to amplify an RF signal, wherein the Doherty amplification circuit includes a main RF amplifier, a peaking RF amplifier, a quadrature coupler and a tunable impedance load configured to provide a tunable impedance, wherein the main RF amplifier is coupled to the quadrature coupler, the peaking RF amplifier is coupled to the quadrature coupler, the quadrature coupler has an isolation port and the tunable impedance load is coupled to the isolation port of the quadrature coupler, and wherein the peaking RF amplifier is configured to be deactivated while the RF signal is below a threshold level and is configured to be activated while the RF signal is above the threshold level and the main RF amplifier is configured to be activated while the RF signal is below the threshold level and above the threshold level; and a control circuit configured to dynamically detect RF power of the Doherty amplification circuit and dynamically tune the tunable impedance of the tunable impedance load as a function of the RF power of the Doherty amplification circuit such that a load impedance presented by the quadrature coupler to the main RF amplifier is approximately equal to double a characteristic amplifier impedance of the Doherty amplification circuit while the peaking RF amplifier is deactivated and the main RF amplifier is activated. 2. The RF amplification device of claim 1 wherein the Doherty amplification circuit further comprises a second quadrature coupler and wherein: the main RF amplifier is coupled between the quadrature coupler and the second quadrature coupler; and the peaking RF amplifier is coupled between the quadrature coupler and the second quadrature coupler. 3. The RF amplification device of claim 1 wherein: the main RF amplifier is a Class A amplifier; and the peaking RF amplifier is a Class C amplifier. 4. The RF amplification device of claim 1 wherein the control circuit is further configured to tune the tunable impedance of the tunable impedance load dynamically as the function of the RF power of the Doherty amplification circuit such that the load impedance presented by the quadrature coupler to the main RF amplifier is approximately equal to a characteristic amplifier impedance of the Doherty amplification circuit when the main RF amplifier and the peaking RF amplifier are both approximately saturated. 5. A radio frequency (RF) amplification device comprising: a Doherty amplification circuit that functions as a Doherty amplifier and configured to amplify an RF signal, wherein the Doherty amplification circuit includes a main RF amplifier, a peaking RF amplifier, a quadrature coupler and a tunable impedance load configured to provide a tunable impedance, wherein the main RF amplifier is coupled to the quadrature coupler, the peaking RF amplifier is coupled to the quadrature coupler, the quadrature coupler has an isolation port and the tunable impedance load is coupled to the isolation port of the quadrature coupler, and wherein the peaking RF amplifier is configured to be deactivated while an RF signal is below a threshold level and is configured to be activated while the RF signal is above the threshold level and the main RF amplifier is configured to be activated while the RF signal is below the threshold level and above the threshold level; and a control circuit configured to dynamically detect RF power of the Doherty amplification circuit and tune the tunable impedance of the tunable impedance load dynamically as a function of the RF power of the Doherty amplification circuit such that a load impedance presented by the quadrature coupler to the main RF amplifier is decreased as the RF power of the Doherty amplification circuit is increased. 6. The RF amplification device of claim 5 wherein the control circuit is further configured to tune the tunable impedance of the tunable impedance load dynamically as the function of the RF power of the Doherty amplification circuit such that the load impedance presented by the quadrature coupler to the main RF amplifier has an impedance range from approximately a characteristic amplifier impedance of the Doherty amplification circuit to approximately double the characteristic amplifier impedance of the Doherty amplification circuit. 7. The RF amplification device of claim 6 wherein the control circuit is further configured to tune the tunable impedance of the tunable impedance load dynamically as the function of the RF power of the Doherty amplification circuit such that the load impedance presented by the quadrature coupler to the main RF amplifier is set approximately to double the characteristic amplifier impedance while the peaking RF amplifier is deactivated and the load impedance presented by the quadrature coupler to the main RF amplifier is set approximately to the characteristic amplifier impedance when both the main RF amplifier and the peaking RF amplifier are approximately saturated. 8. A radio frequency, (RF) amplification device comprising: a Doherty amplification circuit that functions as a Doherty amplifier and configured to amplify an RF signal, wherein the Doherty amplification circuit includes a main RF amplifier, a peaking RF amplifier, a quadrature coupler, a second quadrature coupler and a tunable impedance load configured to provide a tunable impedance, wherein the main RF amplifier is coupled between the quadrature coupler and the second quadrature coupler, the peaking RF amplifier is coupled between the quadrature coupler and the second quadrature coupler, the quadrature coupler has an isolation port, the tunable impedance load is coupled to the isolation port of the quadrature coupler and the second quadrature coupler has an input port configured to receive the RF signal for the Doherty amplification circuit, wherein the peaking RF amplifier is configured to be deactivated while an RF signal is below a threshold level and is configured to be activated while the RF signal is above the threshold level, the main RF amplifier is configured to be activated while the RF signal is below the threshold level and above the threshold level, and the second quadrature coupler is operably associated with the quadrature coupler so as to pass the RF signal to the main RF amplifier while the peaking RF amplifier is deactivated and split the RF signal into a first RF split signal and a second RF split signal while the peaking RF amplifier is activated, and wherein the second quadrature coupler is configured to pass the first RF split signal to the main RF amplifier and pass the second RF split signal to the peaking RF amplifier while the peaking RF amplifier is activated; and a control circuit configured to dynamically detect RF power of the Doherty amplification circuit and dynamically tune the tunable impedance of the tunable impedance load as a function of the RF power. 9. The RF amplification device of claim 8 wherein the quadrature coupler further includes an output port configured to output the RF signal after amplification by the Doherty amplification circuit and wherein the quadrature coupler is configured to: pass the RF signal from the main RF amplifier to the output port while the peaking RF amplifier is deactivated; and combine the first RF split signal and the second RF split signal into the RF signal such that the RF signal is output from the output port after amplification by the Doherty amplification circuit while the peaking RF amplifier is activated. 10. The RF amplification device of claim 9 further comprising a second impedance load wherein the second quadrature coupler includes a

Assignees

Inventors

Classifications

  • in integrated circuits · CPC title

  • H03F1/0288Primary

    using a main and one or several auxiliary peaking amplifiers whereby the load is connected to the main amplifier using an impedance inverter, e.g. Doherty amplifiers · CPC title

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Frequently asked questions

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What does patent US9431969B2 cover?
Radio frequency (RF) amplification devices are disclosed that include Doherty amplification circuits and control circuits along with methods of operating the same. In one embodiment, the Doherty amplification circuit includes a quadrature coupler having an isolation port and a tunable impedance load coupled to the isolation port and configured to provide a tunable impedance. The control circuit…
Who is the assignee on this patent?
Rf Micro Devices Inc
What technology area does this patent fall under?
Primary CPC classification H03F1/0288. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Aug 30 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).