Charge coupled device based on atomically layered van der waals solid state film for opto-electronic memory and image capture

Patent metadata

Field	Value
Publication number	US-9431565-B2
Application number	US-201414522215-A
Country	US
Kind code	B2
Filing date	Oct 23, 2014
Priority date	Oct 23, 2014
Publication date	Aug 30, 2016
Grant date	Aug 30, 2016

Abstract

An opto-electronic sensor may provide one or more layers of atomically layered photo-sensitive materials. The sensor may include a gate electrode layer, a dielectric layer in contact with the gate electrode layer, and a working media layer that is photo-sensitive deposited on the dielectric layer. The working media layer may provide one or more layers of one or more materials where each of the one or more layers is an atomic layer. The sensor may also include side electrodes in contact with the working media layer.

First claim

What is claimed is:

1. An opto-electronic sensor comprising:
an atomically layered charge coupled device (ALCCD) comprising a matrix of pixels, wherein each pixel comprises
a gate electrode layer;
a dielectric layer in contact with the gate electrode layer, wherein the dielectric layer is on top of the gate electrode layer;
a working media layer that is photo-sensitive positioned on top of the dielectric layer, wherein the working media layer provides one or more layers of one or more materials where each of the one or more layers is an atomic layer; and
side electrodes in contact with the working media layer.

2. The sensor of claim 1 , wherein the working media layer is a van der Waals solid state film and where the interaction between the one or more layers are non-valence chemical bonds or van der Waal interactions.

3. The sensor of claim 1 , wherein the working media layer forms a mica-like layered structure.

4. The sensor of claim 1 , wherein the side electrodes and the working media layer form Schottky barriers.

5. The sensor of claim 1 , wherein the side electrodes and the working media layer form a pn junction.

6. The sensor of claim 1 , wherein the working media layer is selected from a Cu—In—Ga—Se (CIS) system, III-IV semiconductors, Mo—W—S—Se system, InSe, MoS 2 , MoSe 2 , MoTe 2 , WS 2 , WSe 2 , WTe 2 , TaS 2 , TaSe 2 , TiS 2 , TiSe 2 , NbS 2 , NbSe 2 , VS 2 , GaSe, InS, GaS, GaTe, Cu—In—Se system, Cu 2 S, Cu 2 Se, SnS 2 , or SnSe 2 .

7. The sensor of claim 1 , wherein the sensor is turned on by applying a voltage to the gate electrode layer, and a voltage bias is applied to the side electrodes to read-out.

8. The sensor of claim 1 , wherein multiple sets of each of the components recited in claim 1 are provided to form an array of image capture and storage units.

9. The sensor of claim 1 , wherein the array is read-out in parallel.

10. The sensor of claim 1 , wherein the sensor is flexible, transparent, or both.

11. A method for fabricating an opto-electronic sensor, the method comprising:
forming at an atomically layered charge coupled device (ALCCD) comprising a matrix of pixels, wherein the method for fabricating the matrix of pixels comprises the steps of
depositing a dielectric layer on top of a substrate;
forming one or more layers of materials to create a working media layer that is photo-sensitive on top of the dielectric layer, wherein each of the one or more layers is an atomic layer; and
patterning electrodes on the working media layer.

12. The method of claim 11 further comprising cutting the working media layer into individual pixel units to separate the working media for the individual pixel units, wherein each of the individual pixel units provides a pair of the electrodes on the working media layer.

13. The method of claim 11 further comprising patterning a gate electrode.

14. The method of claim 11 , wherein the working media layer is a van der Waals solid state film and where the interaction between the one or more layers are non-valence chemical bonds or van der Waal interactions.

15. The method of claim 11 , wherein the electrodes and the working media layer form Schottky barriers.

16. The method of claim 11 , wherein the working media layer forms a mica-like layered structure.

17. The method of claim 11 , wherein the working media layer is selected from a Cu—In—Ga—Se (CIS) system, III-IV semiconductors, Mo—W—S—Se system, InSe, MoS 2 MoSe 2 , MoTe 2 , WS 2 , WSe 2 , WTe 2 , TaS 2 , TaSe 2 , TiS 2 , TiSe 2 , NbS 2 , NbSe 2 , VS 2 , GaSe, InS, GaS, GaTe, Cu—In—Se system, Cu 2 S, Cu 2 Se, SnS 2 , SnSe 2 .

18. The method of claim 12 , wherein an array comprising the individual pixel units is read-out in parallel.

19. The method of claim 11 , further comprising transferring the working media layer to the substrate.

20. The method of claim 11 , wherein the sensor is flexible, transparent, or both.

Assignees

• Lei Sidong
• Ge Liehui
• George Antony
• Li Bo
• Vajtai Robert
• Ajayan Pulickel M
• Univ Rice William M

Inventors

• Lei Sidong
• Ge Liehui
• George Antony
• Li Bo
• Vajtai Robert
• Ajayan Pulickel M

Classifications

• H10F77/206

  for devices having potential barriers · CPC title

• H10F77/147

  Shapes of bodies · CPC title

• H10F77/126

  comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS] · CPC title

• H10F77/122

  comprising only Group IV materials · CPC title

• H10F71/00

  Manufacture or treatment of devices covered by this subclass (patterning processes to connect thin photovoltaic cells in integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F19/33; manufacture or treatment of encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F19/80; manufacture or treatment of integrated devices, or assemblies of multiple devices, comprising at least one element in which radiation controls the flow of current H10F39/00) · CPC title