Display device

Patent metadata

Field	Value
Publication number	US-9431428-B2
Application number	US-201514626011-A
Country	US
Kind code	B2
Filing date	Feb 19, 2015
Priority date	Apr 19, 2013
Publication date	Aug 30, 2016
Grant date	Aug 30, 2016

Abstract

A display device capable of operating at high speed and with low power consumption is provided. A miniaturized display device occupying a small area is also provided. The display device includes a support; a display portion which includes a pixel; a light-blocking unit which is in the support and includes a light-blocking layer having a first opening overlapping with at least part of the pixel, and a movable light-blocking layer blocking light passing through the first opening; a transistor which is electrically connected to the light-blocking unit and includes an oxide semiconductor film; and a capacitor electrically connected to the transistor.

First claim

What is claimed is:

1. A display device comprising:
a display element between a pair of electrodes; and
a MEMS shutter capable of moving to block light,
wherein the MEMS shutter is electrically connected to a switching element,
wherein the switching element comprises at least a transistor and a capacitor,
wherein the transistor comprises an oxide semiconductor film, and
wherein the capacitor comprises a conductive film, an insulating film, and one of the pair of electrodes.

2. The display device according to claim 1 , wherein the display element is a liquid crystal element.

3. The display device according to claim 1 , wherein one of the pair of electrodes is electrically connected to the transistor.

4. The display device according to claim 1 , wherein the MEMS shutter comprises:
a first layer having an opening overlapping with at least part of the display element;
a second layer configured to block light passing through the opening; and
an actuator configured to move the second layer.

5. The display device according to claim 4 , wherein the actuator is electrically connected to the transistor.

6. The display device according to claim 1 , wherein the oxide semiconductor film and the conductive film are on a same surface.

7. The display device according to claim 1 , wherein the oxide semiconductor film comprises at least one of In, Ga, and Zn.

8. The display device according to claim 1 , wherein the conductive film comprises at least one of In, Ga, and Zn.

9. A display device comprising:
a display element between a pair of electrodes; and
a MEMS shutter capable of moving to block light,
wherein the MEMS shutter is electrically connected to a first switching element and a second switching element,
wherein the first switching element comprises at least a first transistor and a first capacitor,
wherein the second switching element comprises at least a second transistor and a second capacitor,
wherein the first transistor comprises a first oxide semiconductor film,
wherein the second transistor comprises a second oxide semiconductor film,
wherein the first capacitor comprises a first conductive film, a first insulating film, and one of the pair of electrodes, and
wherein the second capacitor comprises a second conductive film, a second insulating film, and the one of the pair of electrodes.

10. The display device according to claim 9 , wherein the display element is a liquid crystal element.

11. The display device according to claim 9 , wherein one of the pair of electrodes is electrically connected to the first transistor and the second transistor.

12. The display device according to claim 9 , wherein the MEMS shutter comprises:
a first layer having an opening overlapping with at least part of the display element;
a second layer configured to block light passing through the opening; and
an actuator configured to move the second layer.

13. The display device according to claim 12 , wherein the actuator is electrically connected to the first transistor and the second transistor.

14. The display device according to claim 9 , wherein the first oxide semiconductor film, the second oxide semiconductor film, the first conductive film, and the second conductive film are on a same surface.

15. The display device according to claim 9 , wherein each of the first oxide semiconductor film and the second oxide semiconductor film comprises at least one of In, Ga, and Zn.

16. The display device according to claim 9 , wherein each of the first conductive film and the second conductive film comprises at least one of In, Ga, and Zn.

17. A semiconductor device comprising:
a first transistor comprising a first semiconductor film;
a second transistor comprising a second semiconductor film;
a capacitor; and
a MEMS shutter,
wherein the first transistor is electrically connected to the MEMS shutter,
wherein a gate of the first transistor is electrically connected to one of source and drain of the second transistor, and
wherein the capacitor is electrically connected to the other of source and drain of the second transistor.

18. The semiconductor device according to claim 17 , wherein the second transistor is positioned over the first transistor.

19. The semiconductor device according to claim 17 , wherein the second semiconductor film is an oxide semiconductor film.

20. The semiconductor device according to claim 19 , wherein the oxide semiconductor film comprises at least one of In, Ga, and Zn.

21. The semiconductor device according to claim 17 ,
wherein the capacitor comprises a first conductive film, a second conductive film, and an insulating film,
wherein the first conductive film and the second semiconductor film are on a same surface, and
wherein the second conductive film is electrically connected to the other of source and drain of the second transistor.

22. The semiconductor device according to claim 17 ,
wherein the MEMS shutter is capable of moving to block light, and
wherein the MEMS shutter comprises:
a first layer having an opening;
a second layer configured to block light passing through the opening; and
an actuator configured to move the second layer.

23. The semiconductor device according to claim 22 , wherein the actuator is electrically connected to the first transistor.

Assignees

• Semiconductor Energy Lab

Inventors

• Yamazaki Shunpei

Classifications

• B81B2203/0163

  Spring holders · CPC title

• G02F1/136209

  Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element · CPC title

• G02F1/136213

  Storage capacitors associated with the pixel electrode · CPC title

• B81B2203/051

  Translation according to an axis parallel to the substrate · CPC title

• G02B26/04

  by periodically varying the intensity of light, e.g. using choppers (shutters, diaphragms for cameras G03B9/00; devices for eliminating or reducing the effect of flicker in projection systems G03B21/40) · CPC title