Laser assisted direct bonding
US-9171721-B2 · Oct 27, 2015 · US
US9431312B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9431312-B2 |
| Application number | US-201615079957-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 24, 2016 |
| Priority date | Oct 26, 2010 |
| Publication date | Aug 30, 2016 |
| Grant date | Aug 30, 2016 |
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A medical device includes a first substrate, a second substrate, a control module, and an energy storage device. The first substrate includes at least one of a first semiconductor material and a first insulating material. The second substrate includes at least one of a second semiconductor material and a second insulating material. The second substrate is bonded to the first substrate such that the first and second substrates define an enclosed cavity between the first and second substrates. The control module is disposed within the enclosed cavity. The control module is configured to at least one of determine a physiological parameter of a patient and deliver electrical stimulation to the patient. The energy storage device is disposed within the cavity and is configured to supply power to the control module.
Opening claim text (preview).
The invention claimed is: 1. A method comprising: connecting a control module to one of a first substrate and a second substrate, wherein the first substrate includes at least one of a first semiconductor material and a first insulating material, wherein the second substrate includes at least one of a second semiconductor material and a second insulating material, and wherein the control module is configured to one of determine a physiological parameter of a patient and deliver electrical therapy to the patient; connecting an energy storage device to one of the first and second substrates; interfacing the first and second substrates such that the first and second substrates define an enclosed cavity between the first and second substrates, the enclosed cavity including the control module and the energy storage device; and heating an interface between the first and second substrates to form a bond between the first and second substrates. 2. The method of claim 1 , wherein heating the interface includes heating at least a portion of the interface using a laser directed at the interface. 3. The method of claim 1 , wherein the first substrate includes a glass substrate, the second substrate includes a glass substrate, and one of the first and second substrates includes a light absorbing layer at the interface. 4. The method of claim 3 , wherein the light absorbing layer absorbs light at a wavelength that is transmitted by one of the first and second substrates. 5. The method of claim 3 , wherein heating the interface includes heating at least a portion of the light absorbing layer using a laser directed at the light absorbing layer. 6. The method of claim 1 , wherein the first substrate includes a glass substrate and the second substrate includes a semiconductor substrate.
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