Optic modulator and method of manufacturing the same

Patent metadata

Field	Value
Publication number	US-9429774-B2
Application number	US-201514726143-A
Country	US
Kind code	B2
Filing date	May 29, 2015
Priority date	May 29, 2014
Publication date	Aug 30, 2016
Grant date	Aug 30, 2016

Abstract

An optic modulator may include: an optical waveguide including a ridge-shaped portion having a first region and a second region over the first region; a slab-shaped portion being in contact with a first region of the ridge-shaped portion; an optical waveguide electrode forming a Schottky contact with a second region of the ridge-shaped portion; metal plugs being in contact with the slab-shaped portion and the optical waveguide electrode, respectively; and metal pads connected to the respective metal plugs.

First claim

What is claimed is:

1. An optic modulator comprising:
an optical waveguide comprising a ridge-shaped portion having a first region and a second region over the first region;
a slab-shaped portion being in contact with a first region of the ridge-shaped portion;
an optical waveguide electrode forming a Schottky contact with a second region of the ridge-shaped portion;
metal plugs being in contact with the slab-shaped portion and its the optical waveguide electrode, respectively; and
metal pads connected to the respective metal plugs.

2. The optic modulator of claim 1 , wherein the optical waveguide electrode comprises a conductive material optical transparency.

3. The optic modulator of claim 1 , wherein the optical waveguide electrode comprises ITO (Indium Tin Oxide).

4. The optic modulator of claim 1 , wherein the contact area between the ridge-shaped portion and the optical waveguide electrode is larger than the contact area between the ridge-shaped portion and the slab-shaped portion.

5. The optic modulator of claim 1 , further comprising:
a semiconductor substrate; and
an insulating layer over the semiconductor substrate,
wherein the optical waveguide and the slab-shaped portion are positioned over the insulating layer.

6. The optic modulator of claim wherein slab-shaped portion comprises:
a first slab-shaped portion being in contact with one side of the first region of the ridge-shaped portion; and
a second slab-shaped portion being in contact with the other side of the first region of the ridge-shaped portion.

7. The optic modulator of claim 1 , wherein the ridge-shaped portion comprises an undoped intrinsic silicon layer, and the slab-shaped portion comprises an extrinsic silicon layer doped with an N-type dopant.

8. The optic modulator of claim 1 , wherein the ridge-shaped portion and the slab-shaped portion have different thicknesses while being in horizontal contact with each other.

9. The optic modulator of claim 1 , wherein the cross-section of the optical waveguide has a smaller size than the effective wavelength of light passing through the optical waveguide.

10. The optic modulator of claim 1 , wherein the slab-shaped portion and the first region of the ridge-shaped portion have the same thickness, and the slab-shaped portion has a smaller thickness than the second region of the ridge-shaped portion.

11. The optic modulator of claim 1 , wherein the semiconductor substrate, the optical waveguide, and the slab-shaped portion comprise silicon, SiGe, or compound semiconductor.

12. The optic modulator of claim 1 , wherein the optic modulator has a one-side structure in which the slab-shaped portion is in contact with one side of the first region of the ridge-shaped portion.

13. An optic modulator comprising:
a Schottky diode comprising a ridge-shaped portion containing intrinsic silicon, a slab-shaped portion being in contact with a first region of the ridge-shaped portion and containing extrinsic silicon, and ITO forming a Schottky contact with a second region of the ridge-shaped portion;
metal plugs being in contact with the slab-shaped portion and the optical waveguide electrode, respectively; and
metal pads connected to the respective metal plugs.

14. The optic modulator of claim 13 , wherein the contact area between the ridge-shaped portion and ITO is larger than the contact area between the ridge-shaped portion and the slab-shaped portion.

15. The optic modulator of claim 13 , wherein the slab-shaped portion comprises:
a first slab-shaped portion being in contact with one side of the first region of the ridge-shaped portion and containing first extrinsic silicon; and
a second slab-shaped portion being in contact with the other side of the first region of the ridge-shaped portion and containing second extrinsic silicon.

16. The optic modulator of claim 13 , wherein the second region of the ridge-shaped portion has a larger thickness than the first region of the ridge-shaped portion, and the first region and the slab-shaped portion have the same thickness.

17. An optic modulator comprising:
an optical waveguide comprising a ridge-shaped portion having a first region and a second region over the first region;
a slab-shaped portion being in contact with the first region of the ridge-shaped portion;
an electrode covering the top surface and both sidewalls of the second region of the ridge-shaped portion;
an inter-insulating layer positioned between the electrode and the second region;
metal plugs being in contact with the slab-shaped portion and an electrode, respectively; and
metal pads connected to the respective metal plugs.

18. The optic modulator of claim 17 , the electrode comprises ITO.

19. The optic modulator of claim 17 , wherein the ridge-shaped portion contains intrinsic silicon, and the slab-shaped portion contains extrinsic silicon.

20. The optic modulator of claim 17 , wherein a part of the electrode is in contact with the first region of the ridge-shaped portion.

Assignees

• Sk Hynix Inc
• Univ Seoul Nat R & Db Found

Inventors

• Lee Jong-Ho
• Yoo Keon

Classifications

• G02B2006/12123

  Diode · CPC title

• G02B6/12

  of the integrated circuit kind (electric integrated circuits H10B, H10D84/00 - H10D89/00, H10F19/00, H10F39/00, H10H29/00, H10K19/00, H10K39/00, H10K59/00, H10N19/00, H10N39/00, H10N59/00, H10N69/00, H10N79/00, H10N89/00) · CPC title

• G02F1/011 Primary

  in optical waveguides, not otherwise provided for in this subclass · CPC title

• G02B2006/12142

  Modulator · CPC title

• G02F1/025 Primary

  in an optical waveguide structure (G02F1/017, {G02F1/2257} take precedence) · CPC title