High-order mode filter

Patent metadata

Field	Value
Publication number	US-9429693-B2
Application number	US-201314429166-A
Country	US
Kind code	B2
Filing date	Jun 18, 2013
Priority date	Sep 25, 2012
Publication date	Aug 30, 2016
Grant date	Aug 30, 2016

Abstract

A rib waveguide type high-order mode filter includes a plate-like slab region 1 ; a projection portion 2 formed in a stripe along a waveguiding direction of light on the slab region 1 ; and a mesa region 4 having a bottom surface positioned at the same level as that of the bottom surface of the slab region 1 and a top surface positioned at a higher level than that of the top surface of the slab region 1 , on at least one side of the slab region 1 , wherein the projection portion 2 , the slab region 1 , and the mesa region 4 are made of the same material; and the mesa region 4 includes a doped area 4 a in which an optical-absorption function is added by impurity doping into the material.

First claim

What is claimed is:

1. A rib waveguide type high-order mode filter, comprising:
a plate-like slab region;
a projection portion formed in a stripe along a waveguiding direction of light on the slab region; and
a mesa region having a bottom surface positioned at the same level as that of the bottom surface of the slab region and a top surface positioned at a higher level than that of the top surface of the slab region, on at least one side of the slab region in a transverse direction parallel to at least one of the bottom surface of the mesa region and the top surface of the mesa region,
wherein the projection portion, the slab region, and the mesa region are made of the same material;
the mesa region comprises a doped area in which an optical-absorption function is added by impurity doping into the material;
a refraction index in the doped area is decreased due to the impurity doping as compared to the material located around the doped area; and
the mesa region comprises a non-doped area located on at least one of a side above the doped area, a side below the doped area, a right side of the doped area, and a left side of the doped area.

2. The high-order mode filter according to claim 1 ,
wherein the non-doped area is formed below the doped area; and
the height of the non-doped area Dnd and the thickness of the slab region Ds satisfy a relation of 0<Dnd<Ds.

3. The high-order mode filter according to claim 1 ,
wherein the non-doped area formed adjacent to the doped area becomes a core through which the light propagates in the mesa region; and
a size of the non-doped area and a width of the mesa region are set so that the difference between the effective refraction index for a mesa region waveguide mode assuming the absence of the projection portion and the effective refraction index for a high-order mode to be eliminated and to propagate through the projection portion may become smaller than the difference between the effective refraction index for the mesa region waveguide mode assuming the absence of the projection portion and the effective refraction index for a fundamental mode propagating through the projection portion assuming the absence of the mesa region.

4. The high-order mode filter according to claim 1 ,
wherein one of a position and a size of at least one of the doped area and the non-doped area is uneven and varies along the direction in which the light propagates through the projection portion.

5. The high-order mode filter according to claim 1 ,
wherein at least one of the doped area and the non-doped area has an asymmetric structure in which one of the position, shape, and size differs from each other on the sides of the projection portion.

6. The high-order mode filter according to claim 1 ,
wherein a relation of Dm=H is satisfied by the height of the mesa region Dm and a height of a rib waveguide H of the sum of the thickness of the slab region and the height of the projection portion.

7. The high-order mode filter according to claim 1 ,
wherein the projection portion, the slab region, and the mesa region are made of silicon.

8. The high-order mode filter according to claim 1 ,
wherein one of a position and a size of at least one of the mesa region and the projection portion is uneven and varies along the direction in which the light propagates through the projection portion.

9. The high-order mode filter according to claim 1 ,
wherein the mesa region has an asymmetric structure in which one of the position, shape, and size differs from each other on the sides of the projection portion.

10. The high-order mode filter according to claim 2 ,
wherein the non-doped area formed adjacent to the doped area becomes a core through which the light propagates in the mesa region; and
a size of the non-doped area and a width of the mesa region are set so that the difference between the effective refraction index for a mesa region waveguide mode assuming the absence of the projection portion and the effective refraction index for a high-order mode to be eliminated and to propagate through the projection portion may become smaller than the difference between the effective refraction index for the mesa region waveguide mode assuming the absence of the projection portion and the effective refraction index for a fundamental mode propagating through the projection portion assuming the absence of the mesa region.

11. The high-order mode filter according to claim 2 ,
wherein one of a position and a size of at least one of the doped area and the non-doped area is uneven and varies along the direction in which the light propagates through the projection portion.

12. The high-order mode filter according to claim 3 ,
wherein one of a position and a size of at least one of the doped area and the non-doped area is uneven and varies along the direction in which the light propagates through the projection portion.

13. The high-order mode filter according to claim 2 ,
wherein at least one of the doped area and the non-doped area has an asymmetric structure in which one of the position, shape, and size differs from each other on the sides of the projection portion.

14. The high-order mode filter according to claim 3 ,
wherein at least one of the doped area and the non-doped area has an asymmetric structure in which one of the position, shape, and size differs from each other on the sides of the projection portion.

15. The high-order mode filter according to claim 4 ,
wherein at least one of the doped area and the non-doped area has an asymmetric structure in which one of the position, shape, and size differs from each other on the sides of the projection portion.

16. The high-order mode filter according to claim 1 ,
wherein a relation of Dm=H is satisfied by the height of the mesa region Dm and a height of a rib waveguide H of the sum of the thickness of the slab region and the height of the projection portion.

17. The high-order mode filter according to claim 1 ,
wherein the projection portion, the slab region, and the mesa region are made of silicon.

18. The high-order mode filter according to claim 1 ,
wherein one of a position and a size of at least one of the mesa region and the projection portion is uneven and varies along the direction in which the light propagates through the projection portion.

19. The high-order mode filter according to claim 1 ,
wherein the mesa region has an asymmetric structure in which one of the position, shape, and size differs from each other on the sides of the projection portion.

Assignees

• Nec Corp

Inventors

• Takahashi Shigeki

Classifications

• G02B5/20 Primary

  Filters (polarising elements G02B5/30) · CPC title

• G02F1/365

  in an optical waveguide structure (G02F1/377, {G02F1/395} take precedence) · CPC title

• G02B6/14

  Mode converters · CPC title

• G02F1/3501

  Constructional details or arrangements of non-linear optical devices, e.g. shape of non-linear crystals · CPC title

• G02B2006/12126

  Light absorber · CPC title