Semiconductor Devices Comprising 2D-Materials and Methods of Manufacture Thereof
US-2016379901-A1 · Dec 29, 2016 · US
US9429662B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9429662-B2 |
| Application number | US-201414230822-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 31, 2014 |
| Priority date | Oct 23, 2012 |
| Publication date | Aug 30, 2016 |
| Grant date | Aug 30, 2016 |
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A bulk semiconducting scintillator device, including: a Li-containing semiconductor compound of general composition Li-III-VI 2 , wherein III is a Group III element and VI is a Group VI element; wherein the Li-containing semiconductor compound is used in one or more of a first mode and a second mode, wherein: in the first mode, the Li-containing semiconductor compound is coupled to an electrical circuit under bias operable for measuring electron-hole pairs in the Li-containing semiconductor compound in the presence of neutrons and the Li-containing semiconductor compound is also coupled to current detection electronics operable for detecting a corresponding current in the Li-containing semiconductor compound; and, in the second mode, the Li-containing semiconductor compound is coupled to a photodetector operable for detecting photons generated in the Li-containing semiconductor compound in the presence of the neutrons.
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What is claimed is: 1. A bulk semiconducting scintillator device, comprising: a Li-containing semiconductor compound of general composition Li-III-VI 2 , wherein III is a Group III element and VI is a Group VI element; wherein the Li-containing semiconductor compound is simultaneously configured to be selectively used in one or more of a first mode and a second mode, wherein: in the first mode, the Li-containing semiconductor compound is coupled to an electrical circuit under bias operable for measuring electron-hole pairs in the Li-containing semiconductor compound in the presence of neutrons and the Li-containing semiconductor compound is also coupled to current detection electronics operable for detecting a corresponding current in the Li-containing semiconductor compound; and in the second mode, the Li-containing semiconductor compound is coupled to a photodetector operable for detecting photons generated in the Li-containing semiconductor compound in the presence of the neutrons. 2. The device of claim 1 , wherein the Li-containing semiconductor compound comprises 6 LiInSe 2 . 3. The device of claim 1 , wherein the photons are generated in the Li-containing semiconductor compound in the presence of the neutrons in a 6 Li(n,α) reaction. 4. The device of claim 1 , wherein the Li-containing semiconductor compound is free of dopants. 5. The device of claim 1 , wherein the photodetector comprises a solid-state Si photomultiplier. 6. The device of claim 5 , wherein the generated photons are wavelength matched to the solid-state Si photomultiplier. 7. The device of claim 1 , wherein, when the Li-containing semiconductor compound is used in both the first mode and the second mode, a coincident counting algorithm is used to detect the neutrons. 8. The device of claim 1 , wherein the Li-III-VI 2 semiconductor compound is formed by the process of: melting the Group III element; adding a Group I element to the melted Group III element at a rate that allows the Group I and Group III elements to react thereby providing a single phase I-III compound; and adding the Group VI element to the single phase I-III compound at elevated temperature; wherein the Group I element comprises Li. 9. A bulk semiconducting scintillator method, comprising: providing a Li-containing semiconductor compound of general composition Li-III-VI 2 , wherein III is a Group III element and VI is a Group VI element; wherein the Li-containing semiconductor compound is simultaneously configured to be selectively used in one or more of a first mode and a second mode, wherein: in the first mode, the Li-containing semiconductor compound is coupled to an electrical circuit under bias operable for measuring electron-hole pairs in the Li-containing semiconductor compound in the presence of neutrons and the Li-containing semiconductor compound is also coupled to current detection electronics operable for detecting a corresponding current in the Li-containing semiconductor compound; and in the second mode, the Li-containing semiconductor compound is coupled to a photodetector operable for detecting photons generated in the Li-containing semiconductor compound in the presence of the neutrons. 10. The method of claim 9 , wherein the Li-containing semiconductor compound comprises 6 LiInSe 2 . 11. The method of claim 9 , wherein the photons are generated in the Li-containing semiconductor compound in the presence of the neutrons in a 6 Li(n,α) reaction. 12. The method of claim 9 , wherein the Li-containing semiconductor compound is free of dopants. 13. The method of claim 9 , wherein the photodetector comprises a solid-state Si photomultiplier. 14. The method of claim 9 , wherein the generated photons are wavelength matched to the solid-state Si photomultiplier. 15. The method of claim 9 , wherein, when the Li-containing semiconductor compound is used in both the first mode and the second mode, a coincident counting algorithm is used to detect the neutrons. 16. The method of claim 9 , wherein the Li-III-VI 2 semiconductor compound is formed by the process of: melting the Group III element; adding a Group I element to the melted Group III element at a rate that allows the Group I and Group III elements to react thereby providing a single phase I-III compound; and adding the Group VI element to the single phase I-III compound at elevated temperature; wherein the Group I element comprises Li.
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