Method of manufacturing vitreous silica crucible and method of manufacturing silicon ingot
US-2015368828-A1 · Dec 24, 2015 · US
US9428844B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9428844-B2 |
| Application number | US-201314375757-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 31, 2013 |
| Priority date | Jan 31, 2012 |
| Publication date | Aug 30, 2016 |
| Grant date | Aug 30, 2016 |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
The present invention concerns a crucible for solidifying a silicon ingot from molten silicon, characterized in that it is coated at least partially on the inner surface thereof with an outer layer provided in the form of a stack of laminations, each lamination having a thickness varying from 5 to 150 μm, and being formed from a material obtained by thermal decomposition of polysilazane(s) and/or polysiloxane(s) and wherein inorganic particles are embedded having a size varying from 50 μm to 200 μm. The present invention further concerns a method for preparing such crucibles.
Opening claim text (preview).
The invention claimed is: 1. A crucible useful for solidifying a silicon ingot from molten silicon, wherein it is coated at least partially on its inner surface with an outer layer that is in the form of a stack of strata, each stratum having a thickness varying from 5 to 150 μm, and being formed from a material obtained by thermal decomposition of polysilazane(s) and/or polysiloxane(s) and in which inorganic particles having a size that varies from 50 nm to 200 μm are incorporated. 2. The crucible as claimed in claim 1 , wherein the dimensions of said inorganic particles vary from 500 nm to 50 μm. 3. The crucible as claimed in claim 1 , wherein said inorganic particles are selected from silicon particles that are optionally surface oxidized, boron nitride particles, silicon nitride particles, silicon carbide particles, silicon oxycarbide particles, silica particles, silicon oxycarbonitride particles, silicon and boron carbonitride particles, and mixtures thereof. 4. The crucible as claimed in claim 1 , wherein said inorganic particles are of the same chemical nature as the material forming the stratum or the strata containing them. 5. The crucible as claimed in claim 1 , wherein the outer layer comprises from 2 to 8 strata, said strata being superposed and contiguous. 6. The crucible as claimed in claim 1 , wherein the thickness of a stratum varies from 10 μm to 50 μm. 7. The crucible as claimed in claim 1 , wherein the material obtained by thermal decomposition of polysilazane(s) and/or polysiloxane(s) is based on silicon carbide, silicon nitride, silica, silicon oxycarbonitride and/or silicon oxycarbide. 8. The crucible as claimed in claim 1 , wherein one or more of the strata constituting said layer, is/are formed from a material obtained by thermal decomposition of polysilazane(s), in which inorganic particles are incorporated. 9. The crucible as claimed in claim 8 , wherein said inorganic particles are silicon oxycarbide particles. 10. The crucible as claimed in claim 8 , wherein said inorganic particles are particles formed predominantly from silica. 11. The crucible as claimed in claim 1 , wherein all of the strata constituting said layer are formed from one and the same material. 12. The crucible as claimed in claim 1 , wherein at least two strata of said layer are formed from different materials. 13. The crucible as claimed in claim 1 , wherein one or more of the strata forming the outer layer, are in the form of non-touching tiles. 14. The crucible as claimed in claim 13 , wherein said tiles of one stratum are spaced out laterally by 0.1 μm to 50 μm. 15. The crucible as claimed in claim 1 , wherein the outer layer has a thickness ranging from 10 μm to 500 μm. 16. The crucible as claimed in claim 1 , wherein it consists of a dense ceramic substrateor of a porous substrate optionally covered with an impermeabilizing layer. 17. A process for forming a high-purity non-stick coating on the inner surface of a crucible useful for solidifying a silicon ingot from molten silicon, wherein said coating is obtained via (a) the formation of at least one stratum according to a treatment comprising: (1) at least once the sequence of the steps: (i) bringing the inner surface of said crucible into contact with a solution comprising at least one polysilazane and/or one polysiloxane, and additionally containing a particulate material, the particles of which have a size varying from 50 nm to 200 μm, in particulate material/polysilazane and/or polysiloxane proportions ranging from 10% to 70% by volume; (ii) condensation-crosslinking of said solution by heat treatment; and (iii) optionally a pre-pyrolysis in air at a temperature ranging from 270° C. to 700° C.; (2) a pyrolysis under controlled atmosphere and controlled temperature, at a temperature above 700° C. for at least 1 hour and, optionally; (3) an oxidation annealing; followed by (b) the superposing of one or more consecutive strata on the stratum formed in step (a), each stratum being formed by repeating at least once the sequence of steps (i), (ii) and optionally (iii), followed by step (2) and optionally step (3). 18. The process as claimed in claim 17 , wherein the formation of at least one of said strata comprises the pre-pyrolysis step (iii). 19. The process as claimed in claim 18 , wherein the pre-pyrolysis step (iii) is carried out at a temperature ranging from 400° C. to 600° C. 20. The process as claimed in claim 18 , wherein the formation of at least one stratum involving the implementation of steps (i), (ii) and (iii) comprises, prior to the implementation of step (2), the repetition, at least once, of steps (i), (ii) and (iii). 21. The process as claimed in claim 17 , wherein the pyrolysis step (2) of one of steps (a) and (b) is carried out under a reactive atmosphere, which is reactive with respect to the material that is derived from the polysilazane and/or polysiloxane, the other step being carried out under an inert atmosphere. 22. The process as claimed in claim 17 , wherein the solution comprising at least one polysilazane and/or one polysiloxane also comprises a solvent and, where appropriate, a polymerization initiator. 23. The process as claimed in claim 17 , wherein said solution of polysilazane and/or polysiloxane comprises from 10% to 90% by weight of polysilazane(s) and/or polysiloxane(s), with respect to its total weight.
Preparation (chemical coating from the vapour phase C23C16/00) · CPC title
from liquids · CPC title
characterised by the material treated · CPC title
Silicon nitride · CPC title
Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure · CPC title
Related publications grouped by family.
Answers are generated from the same data shown on this page.