Salt, photoresist composition and method for producing photoresist pattern

Patent metadata

Field	Value
Publication number	US-9428485-B2
Application number	US-201213491370-A
Country	US
Kind code	B2
Filing date	Jun 7, 2012
Priority date	Jun 9, 2011
Publication date	Aug 30, 2016
Grant date	Aug 30, 2016

Abstract

A salt represented by formula (I):

wherein Q 1 and Q 2 each independently represent a fluorine atom or a C1-C6 perfluoroalkyl group,
A 1 represents a C1-C30 monovalent organic group, X 1 represents a C1-C10 aliphatic hydrocarbon group where a hydrogen atom may be replaced by a hydroxy group, m 1 and m 2 independently each represent an integer of 1 to 4, and Z + represents an organic cation.

First claim

What is claimed is:

1. A photoresist composition, which comprises a salt represented by formula (I):

wherein Q 1 and Q 2 each independently represent a fluorine atom or a C1-C6 perfluoroalkyl group,
A 1 represents a C3-C30 alicyclic hydrocarbon group in which a hydrogen atom may be replaced by a hydroxy group or a halogen group and in which a methylene group may be replaced by an oxygen atom, a sulfonyl group or a carbonyl group,
X 1 represents a C1-C10 aliphatic hydrocarbon group where a hydrogen atom may be replaced by a hydroxy group,
m 1 and m 2 independently each represent an integer of 1 to 4, and
Z + represents an organic cation,
a resin which is hardly soluble or insoluble but soluble in an aqueous alkali solution by action of an acid, and
a resin having a structural unit represented by formula (FI):

wherein R F1 represents a hydrogen atom or a methyl group,
A F1 represents a C1-C6 alkanediyl group, and
R F2 represents a C1-C10 hydrocarbon group having a fluorine atom.

2. A process for producing a photoresist pattern comprising the following steps (1) to (5):
(1) a step of applying the photoresist composition according to claim 1 on a substrate,
(2) a step of forming a photoresist film by conducting drying,
(3) a step of exposing the photoresist film to radiation,
(4) a step of baking the exposed photoresist film, and
(5) a step of developing the baked photoresist film with an alkaline developer, thereby forming a photoresist pattern.

3. The photoresist composition according to claim 1 , wherein A 1 represents a C3-C30 alicyclic hydrocarbon group in which a hydrogen atom may be replaced by a hydroxy group and in which a methylene group may be replaced by an oxygen atom, a sulfonyl group or a carbonyl group.

4. The photoresist composition according to claim 1 , wherein X 1 is a C1-C5 aliphatic hydrocarbon group.

5. The photoresist composition according to claim 1 , wherein X 1 is a C2-C5 aliphatic hydrocarbon group.

6. The photoresist composition according to claim 1 , wherein m 1 is 2.

7. The photoresist composition according to claim 1 , wherein Z + is an organic cation represented by formula (b2-1-1):

wherein R b19 , R b20 and R b21 are independently in each occurrence a halogen atom, a hydroxy group, a C1-C18 alkyl group, a C3-C18 alicyclic hydrocarbon group, or a C1-C12 alkoxy group, and
v2, w2 and x2 independently each represent an integer of 0 to 5.

8. The photoresist composition according to claim 7 , wherein R b19 , R b20 and R b21 are a methyl group.

9. The photoresist composition according to claim 1 , wherein m 2 is 2.

Assignees

• Masuyama Tatsuro
• Mukai Yuichi
• Sumitomo Chemical Co

Inventors

• Masuyama Tatsuro
• Mukai Yuichi

Classifications

• C07C2101/14

  Chemistry & Metallurgy · mapped topic

• C07C2103/74

  Chemistry & Metallurgy · mapped topic

• G03F7/0397

  the macromolecular compound having an alicyclic moiety in a side chain · CPC title

• G03F7/0046

  with perfluoro compounds, e.g. for dry lithography (G03F7/0048 takes precedence) · CPC title

• C07C309/12

  containing esterified hydroxy groups bound to the carbon skeleton · CPC title