Variable capacitor structure

Patent metadata

Field	Value
Publication number	US-9425736-B2
Application number	US-201414146246-A
Country	US
Kind code	B2
Filing date	Jan 2, 2014
Priority date	Jan 2, 2014
Publication date	Aug 23, 2016
Grant date	Aug 23, 2016

Abstract

Variable capacitor structures and methods of use are disclosed. The variable capacitor structures include a variable controlled oscillator which includes a variable capacitor structure having at least one capacitor set driven by a control gate voltage of a voltage control circuit which comprises a logic cell that senses a selected frequency band and sets the control gate voltage based on the selected frequency band.

First claim

What is claimed is:

1. A variable controlled oscillator comprising a variable capacitor structure having at least one capacitor set driven by a control gate voltage of a voltage control circuit which comprises a logic cell that senses a selected frequency band and sets the control gate voltage based on the selected frequency band,
wherein the logic cell is structured to select certain diode connected field effect transistors (FETs) to be coupled to one of a ground and a voltage node, in order to affect the control gate voltage and, hence change frequency in certain bands.

2. The variable controlled oscillator of claim 1 , wherein the variable capacitor structure comprises coarse tune capacitors and fine tune capacitors.

3. A variable controlled oscillator comprising a variable capacitor structure having at least one capacitor set driven by a control gate voltage of a voltage control circuit which comprises a logic cell that senses a selected frequency band and sets the control gate voltage based on the selected frequency band,
wherein the variable capacitor structure comprises coarse tune capacitors and fine tune capacitors,
wherein the coarse tune capacitors comprise four sets of capacitors controlled by respective control bits <3:0>and the fine tune capacitors are controlled by voltages obtained from a filter.

4. The variable controlled oscillator of claim 3 , wherein the filter is a differential filter.

5. A variable controlled oscillator comprising a variable capacitor structure having at least one capacitor set driven by a control gate voltage of a voltage control circuit which comprises a logic cell that senses a selected frequency band and sets the control gate voltage based on the selected frequency band, wherein:
the control gate voltage is held at ground (gnd) for frequency bands 0 - 8 so that capacitance of the at least one capacitor set is at a lowest capacitance; and
the control gate voltage is held at a predetermined voltage above ground for frequency bands 9 - 15 based on the selected frequency band, thereby increasing the capacitance of the at least one capacitor set.

6. The variable controlled oscillator of claim 5 , wherein the control gate voltage is a function of the selected frequency band.

7. The variable controlled oscillator of claim 5 , wherein the voltage control circuit includes diode connected field effect transistors (FETs) which create the control gate voltage based on the selected frequency band.

8. The variable controlled oscillator of claim 7 , wherein a differential filter voltage is additionally used to create the control gate voltage.

9. The variable controlled oscillator of claim 8 , wherein the differential filter voltage varies from 0.1V to 0.9V.

10. The variable controlled oscillator of claim 7 , wherein the diode connected FETs comprise six diode connected FETs.

11. The variable controlled oscillator of claim 10 , wherein combinations of the six diode connected FETs are selectable based on selected frequency bands 9 - 15 .

12. The variable controlled oscillator of claim 11 , wherein the six diode connected FETs are coupled to ground when the selected frequency band is frequency band 15 such that the control gate voltage is at its highest.

13. The variable controlled oscillator of claim 11 , wherein for each frequency band 9 - 15 , the logic cell is structured to select certain of the diode connected FETs to be coupled to one of ground and a voltage node, in order to affect the control gate voltage and, hence change frequency in certain bands.

14. The variable controlled oscillator of claim 13 , wherein control gate voltage is customized based on the selected frequency band.

15. A variable capacitor structure, comprising:
a first variable capacitor configuration having a binary weighted array of capacitor segments, each of the capacitor segments being enabled by one of a plurality of binary control bits;
a second variable capacitor configuration having a capacitance controlled by a first analog control voltage provided by a phase-locked loop; and
a third variable capacitor configuration having a capacitance controlled by a control voltage set by a logic cell that senses a selected frequency band,
wherein the logic cell is structured to select certain diode connected field effect transistors (FETs) to be coupled to one of a ground and a voltage node, in order to affect the control voltage and, hence change frequency in certain bands.

16. The variable capacitor structure of claim 15 , wherein the logic cell sets the control voltage based on the selected frequency band.

17. The variable capacitor structure of claim 16 , wherein voltage control circuit comprises the diode connected field effect transistors (FETs) which create the control voltage based on the selected frequency band, in addition to the first analog control voltage.

18. The variable capacitor structure of claim 17 , wherein:
for each frequency band 9 - 15 , the logic cell is structured to select certain of the diode connected FETs to be coupled to one of ground and a voltage node, in order to affect the control voltage and, hence change frequency in certain bands.

19. The variable capacitor structure of claim 18 , wherein:
all of the diode connected FETs are coupled to ground when the selected frequency band is frequency band 15 such that the control voltage is at its highest; and
none of the diode connected FETs are coupled to ground when the selected frequency band is frequency band 9 such that the control voltage is at its lowest.

20. A method for equalizing gain of a voltage controlled oscillator over a plurality of frequency bands, comprising:
determining a frequency band;
selecting a control voltage based on the determined frequency band; and
setting the control voltage to a variable capacitor by a logic cell,
wherein the logic cell is structured to select certain diode connected field effect transistors (FETs) to be coupled to one of a ground and a voltage node, in order to affect the control voltage and, hence change frequency in certain bands.

Assignees

• IBM

Inventors

• Kelkar Ram

Classifications

• H03B5/124

  the means comprising a voltage dependent capacitance · CPC title

• H03B5/36

  active element in amplifier being semiconductor device ({H03B5/323, H03B5/326} , H03B5/38 take precedence) · CPC title

• H03B5/364

  the amplifier comprising field effect transistors (H03B5/366 takes precedence) · CPC title

• H03B5/1246

  the means comprising transistors used to provide a variable capacitance · CPC title

• H03B5/1228 Primary

  the amplifier comprising one or more field effect transistors · CPC title