Artificial magnetic conductors
US-8957831-B1 · Feb 17, 2015 · US
US9425512B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9425512-B2 |
| Application number | US-201214379599-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 3, 2012 |
| Priority date | Feb 29, 2012 |
| Publication date | Aug 23, 2016 |
| Grant date | Aug 23, 2016 |
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A reflectarray reflects an incident wave in a desired direction. The reflectarray includes a substrate including a surface which is perpendicular to a predetermined axis, and elements disposed on the substrate. A specific element among the elements reflects the incident wave with a specific reflection phase among a plurality of reflection phases. Each of the elements has an element structure including, at least, a patch and a ground plate. Element spacing of first neighboring elements is different from element spacing of second neighboring elements, and a length of a gap between patches of the first neighboring elements is equal to a length of a gap between patches of the second neighboring elements.
Opening claim text (preview).
The invention claimed is: 1. A reflectarray configured to reflect an incident wave in a desired direction, the reflectarray comprising: a substrate that includes a surface which is perpendicular to a predetermined axis; and a plurality of elements disposed on the substrate, wherein a specific element among the elements is configured to reflect the incident wave with a specific reflection phase among a plurality of reflection phases, wherein each of the elements has a mushroom-like structure, wherein the mushroom-like structure includes a patch, a gap between the patch and the ground plate, and a via hole, wherein element spacing between neighboring elements among the elements is a distance between the via holes of the neighboring elements, wherein the element spacing of first neighboring elements among the elements is different from the element spacing of second neighboring elements among the elements, and a length of a gap between the patches of the first neighboring elements is equal to a length of a gap between the patches of the second neighboring elements, wherein the element spacing is variable, and wherein the mushroom-like structures are configured so that the gaps among the patches of the mushroom-like structures can be simultaneously changed by a same value, so as to change the reflection phases. 2. The reflectarray according to claim 1 , wherein the reflection phase is varied by changing a height of the via hole. 3. A design method of designing the reflectarray according to claim 1 , the reflectarray being such that a plurality of elements is disposed on a substrate including a surface which is perpendicular to a predetermined axis, wherein the reflectarray reflects an incident wave in a desired direction, the design method comprising: a step of obtaining, when a radio wave enters the elements which are arranged while being evenly spaced by the element spacing, the reflection phase of the elements as a function of the element spacing, and storing a relationship between the reflection phase and the element spacing in a memory, and a step of repeatedly determining, for each of the elements, the element spacing of the specific element in accordance with the relationship, so that the specific element among the elements reflects the incident wave with the specific reflection phase among the plurality of reflection phases. 4. A design method of designing the reflectarray according to claim 1 , the design method comprising: a step of obtaining, when a radio wave enters the elements, which are arranged while being evenly spaced by the element spacing, and the radio wave is reflected, the reflection phases for corresponding types of the element spacing, and storing relationships between the reflection phases and the types of the element spacing in a memory; and a step of determining the i-th element spacing dv i between the i-th element and (i+1)-th element among the elements based on the reflection phase φ i , wherein the reflection phase φ i is to be achieved on a bisector of the gap between the patch of the i-th element and the patch of the (i+1)-th element, wherein the reflection phase φ i to be achieved is determined by a coordinate yp i that corresponds to the bisector, an incident angle θ i , of the radio wave, and a reflection angle θ r , in accordance with a predetermined formula, and wherein the step of determining the i-th element spacing dv i determines the i-th element spacing dv i , so that, in the relationships, a difference between a reflection phase φ i SIM which corresponds to a candidate of the element spacing and the reflection phase φ i to be achieved becomes small.
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