Thin film, method of forming thin film, semiconductor device including thin film, and method of manufacturing semiconductor device

Patent metadata

Field	Value
Publication number	US-9425323-B2
Application number	US-201414177513-A
Country	US
Kind code	B2
Filing date	Feb 11, 2014
Priority date	Feb 13, 2013
Publication date	Aug 23, 2016
Grant date	Aug 23, 2016

Abstract

A thin film, a method of forming the thin film, a semiconductor device including the thin film, and a method of manufacturing the semiconductor device include forming a thin film including a metal oxynitride, and treating the thin film with inert gas ions so as to stabilize properties of the thin film. The metal oxynitride may include zinc oxynitride (ZnO x N y ). The inert gas ions may include at least one of Ar ions and Ne ions. The treating of the thin film with the inert gas ions may be performed by a sputtering process, a plasma treatment process, or the like.

First claim

What is claimed is:

1. A method of forming a thin film, the method comprising:
forming a preliminary thin film including a metal oxynitride on a substrate; and
treating the preliminary thin film with inert gas ions to form the thin film having stabilized properties, the thin film being a semiconductor film, wherein
the treating of the preliminary thin film with the inert gas ions includes performing a sputtering process, the sputtering process including using an acceleration voltage of about 0.5 keV to about 4.0 keV.

2. The method of claim 1 , wherein the metal oxynitride includes zinc oxynitride.

3. The method of claim 1 , wherein the inert gas ions include at least one selected from Ar ions and Ne ions.

4. The method of claim 1 , wherein the sputtering process is performed under a pressure of about 10 −7 Pa to about 10 −6 Pa.

5. The method of claim 1 , wherein the treating of the preliminary thin film with the inert gas ions is performed at about room temperature.

6. A thin film formed according to the method of claim 1 .

7. A thin film, comprising:
a metal oxynitride, wherein
the thin film satisfies the following inequality of EQUATION (1),
( I max −I min )/ I avg <0.3   EQUATION (1)

where I max and min denote a maximum intensity and a minimum intensity of a high-angle annular dark-field scanning transmission electron microscope (HAADF STEM) image of the thin film, respectively, and
where I avg denotes an average intensity of the HAADF STEM image.

8. The thin film of claim 7 , wherein the metal oxynitride includes zinc oxynitride.

9. The thin film of claim 8 , wherein
the metal oxynitride includes amorphous zinc oxynitride, and
a content ratio of the amorphous zinc oxynitride in the thin film is greater than or equal to 80%.

10. A method of manufacturing a transistor, the method comprising:
forming a channel layer including a thin film, a gate electrode, a source electrode, and a drain electrode,
wherein the thin film is formed according to the method of claim 1 .

11. The method of claim 10 , further comprising:
forming an etch stop layer on the channel layer.

12. A transistor, comprising:
a channel layer formed of a metal oxynitride;
a gate electrode corresponding to the channel layer;
a source electrode connected to a first region of the channel layer; and
a drain electrode connected to a second region of the channel layer, wherein
the channel layer satisfies the following inequality of EQUATION (1)
( I max −I min )/ I avg <0.3   EQUATION (1)

where I max and I min denote a maximum intensity and a minimum intensity of a high-angle annular dark-field scanning transmission electron microscope (HAADF STEM) image of the channel layer, respectively, and

where I avg denotes an average intensity of the HAADF STEM image.

13. The transistor of claim 12 , wherein the metal oxynitride includes zinc oxynitride.

14. The transistor of claim 13 , wherein
the metal oxynitride includes amorphous zinc oxynitride, and
a content ratio of the amorphous zinc oxynitride in the channel layer is greater than or equal to 80%.

15. The transistor of claim 12 , further comprising:
an etch stop layer on the channel layer.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Lee Eun-Ha
• Benayad Anass
• Kim Tae-Sang
• Son Kyoung-Seok

Classifications

• H10P14/3454

  Amorphous · CPC title

• H10P14/3438

  Doping during depositing · CPC title

• H10P14/3426 Primary

  Oxides · CPC title

• H10P14/3402

  characterised by the chemical composition · CPC title

• H10P14/2922

  being non-crystalline insulating materials, e.g. glass or polymers · CPC title