Apparatus, system, and method for non-volatile storage element programming

Patent metadata

Field	Value
Publication number	US-9424930-B2
Application number	US-201113234137-A
Country	US
Kind code	B2
Filing date	Sep 15, 2011
Priority date	Sep 15, 2010
Publication date	Aug 23, 2016
Grant date	Aug 23, 2016

Abstract

Methods, storage controllers, and systems for non-volatile storage element programming are described. One method includes programming user data in pages associated with a set of wordlines of an erase block of a non-volatile, solid-state storage element. The method further includes selecting at least one of the wordlines of the set programmed with the user data and restricting further programming of user data in the pages associated with the selected wordline. In some embodiments, the selected wordline occurs subsequent to the pages associated with the other wordlines of the set in a page programming order for the erase block.

First claim

What is claimed is:

1. A non-volatile storage element programming method comprising:
initiating programming of a full page of user data in a page programming order to pages associated with a set of wordlines of an erase block of a non-volatile, solid-state storage element;
determining that a wordline configured to receive the full page of user data is also configured to not receive a program disturb when a subsequent page of user data is programmed according to the page programming order;
in response to determining that the wordline is configured to not receive a program disturb when a subsequent page of user data is programmed according to the page programming order, selecting a wordline that is configured to receive a program disturb when a subsequent page of user data is programmed according to the page programming order; and
programming the page of user data to the selected wordline.

2. The method of claim 1 wherein at least one of the pages associated with the selected wordline occurs subsequent to pages associated with the other wordlines of the set.

3. The method of claim 1 wherein the selected wordline is adjacent to at least one other wordline of the set.

4. The method of claim 1 further comprising programming at least one page of the determined wordline with dummy data comprising data changed from an erase state.

5. The method of claim 4 wherein the dummy data is programmed only in one or more upper page associated with the selected wordline.

6. The method of claim 4 wherein the dummy data comprises a predetermined bit pattern.

7. The method of claim 1 further comprising not programming pages associated with the selected wordline.

8. The method of claim 1 wherein programming comprises programming user data only in an upper page associated with the selected wordline.

9. The method of claim 8 further comprising not programming a lower page associated with the selected wordline.

10. The method of claim 1 wherein programming comprises programming user data only in a lower page associated with the selected wordline and programming dummy data in an upper page associated with the selected wordline.

11. The method of claim 1 further comprising restricting the selected wordline based on a number of programming/erase (P/E) cycles experienced by the erase block satisfying a threshold.

12. The method of claim 1 further comprising restricting the selected wordline based on a number of P/E cycles experienced by a logical erase block comprising the erase block satisfying a threshold.

13. The method of claim 12 further comprising restricting further programming of user data in pages associated with a second selected wordline of the set, the second selected wordline adjacent to the selected wordline, in response to determining that the number of P/E cycles experienced by the logical erase block satisfies a second threshold.

14. The method of claim 1 wherein pages associated with the selected wordline are programmed last in a page programming order.

15. The method of claim 1 wherein the erase block comprises additional unprogrammed wordlines associated with pages occurring subsequent in a page programming order for the erase block to the pages associated with the selected wordline.

16. A storage apparatus comprising:
a write data pipeline configured to program a full page of user data in a page programming order to pages associated with wordlines of an erase block of a non-volatile, solid-state storage element; and
a wordline restriction module configured to:
select at least one of the wordlines of the erase block; and
restrict programming of user data to one or more pages associated with the selected wordline by programming a predetermined bit pattern to the one or more pages associated with the selected wordline, the predetermined bit pattern comprising dummy data, wherein the dummy data varies across the selected wordline.

17. The storage apparatus of claim 16 wherein at least one of the pages associated with the selected wordline occurs subsequent to the pages associated with other wordlines in the page programming order for the erase block.

18. The storage apparatus of claim 16 wherein restricting comprises programming dummy data in one of the pages associated with the selected wordline.

19. A non-volatile storage system comprising:
a non-volatile, solid-state storage element containing an erase block with a plurality of pages associated with a plurality of wordlines; and
a storage apparatus configured to:
program a full page of data in a page programming order to pages associated with a set of wordlines of the erase block;
select at least one of the wordlines of the set programmed with the user data; and
restrict programming of data in pages associated with the selected wordline by applying a program voltage to program dummy data to one or more of the pages associated with the selected wordline thereby causing a program disturb event for one or more pages storing the user data, wherein the dummy data varies across the one or more of the pages associated with the selected wordline.

20. The system of claim 19 wherein one of the pages associated with the selected wordline occurs subsequent to pages associated with other wordlines in the page programming order for the erase block.

21. A method for storing data, comprising:
storing a full page of data in a page programming order to pages associated with multiple wordlines of an erase block of a non-volatile storage element;
selecting a wordline of the multiple wordlines;
controlling the data stored in the selected wordline such that at least one page of the selected wordline that is addressable to store user data is not programmed with user data; and
programming the at least one page of the selected wordline with dummy data that varies across the at least one page of the selected wordline to cause a program disturb event for one or more pages of a wordline storing user data.

22. The method of claim 21 , further comprising controlling data from being stored in another wordline of the multiple wordlines.

23. The method of claim 21 , further comprising programming the data in a logical page programming order.

Assignees

• Wood Robert Barry
• Hyun Jea Woong
• Sun Hairong
• Sandisk Technologies Llc

Inventors

• Wood Robert Barry
• Hyun Jea Woong
• Sun Hairong

Classifications

• G11C11/5628

  Programming or writing circuits; Data input circuits · CPC title

• G11C16/10 Primary

  Programming or data input circuits · CPC title