High-frequency circuit and optical modulator

Patent metadata

Field	Value
Publication number	US-9423667-B2
Application number	US-201514751453-A
Country	US
Kind code	B2
Filing date	Jun 26, 2015
Priority date	Jun 30, 2014
Publication date	Aug 23, 2016
Grant date	Aug 23, 2016

Abstract

A high-frequency circuit 10 includes: a termination resistor 12 a embedded to a surface of a substrate 21 ; and a signal line 11 a formed on the surface of the substrate 21 , the signal line having a junction segment CJ, the junction segment CJ covering a portion of an upper surface of the termination resistor 12 a so that at least a portion along a width of the junction segment CJ that extends from the start position to the end position is connected to the termination resistor 12 a . A width W S of the signal line 11 a at the start position of the junction segment CJ is equal to or greater than a width W T of the upper surface of the termination resistor 12 a at the start position.

First claim

The invention claimed is:

1. A high-frequency circuit comprising:
a termination resistor embedded to a surface of a substrate; and
a signal line formed on the surface of the substrate, the signal line having a junction segment that starts at a start position and ends at an end position, the start position being short of a termination point of the signal line, the end position being the termination point, the junction segment covering a portion of an upper surface of the termination resistor so that at least a portion along a width of the junction segment that extends from the start position to the end position is connected to the termination resistor,
a width of the signal line at the start position of the junction segment being equal to or greater than a width of the upper surface of the termination resistor at the start position.

2. The high-frequency circuit according to claim 1 , wherein the width of the signal line at the start position is greater than the width of the upper surface of the termination resistor at the start position.

3. The high-frequency circuit according to claim 1 , wherein the width of the signal line in the junction segment gradually decreases from the start position toward the end position so as to be equal to or smaller than the width of the upper surface of the termination resistor at the end position.

4. The high-frequency circuit according to claim 1 , wherein, in a case where a region of the junction segment in which region the junction segment is joined to the termination resistor is a junction region, a ratio of an area of the junction region to an area of the upper surface of the termination resistor is 1% or higher and 10% or lower.

5. The high-frequency circuit according to claim 1 , further comprising a pair of ground lines,
the signal line and the pair of ground lines being coplanarly arranged.

6. The high-frequency circuit according to claim 1 , wherein the substrate is a silicon on insulator (SOI) substrate.

7. The high-frequency circuit according to claim 1 , wherein the termination resistor is made of a p-type semiconductor or an n-type semiconductor.

8. The high-frequency circuit according to claim 1 , wherein the termination resistor is made of titanium nitride.

9. The high-frequency circuit according to claim 1 , further comprising a bias signal line formed on the surface of the substrate, the bias signal line having a junction segment that starts at a start position and ends at an end position, the start position being short of a termination point of the bias signal line, the end position being the termination point, the junction segment covering a portion of the upper surface of the termination resistor so that at least a portion along a width of the junction segment that extends from the start position to the end position is connected to the termination resistor,
a width of the bias signal line at the start position of the junction segment being equal to or greater than the width of the upper surface of the termination resistor at the start position.

10. An optical modulator comprising:
a high-frequency circuit according to claim 1 ; and
a Mach-Zehnder optical interferometer including an optical modulating section provided on at least one of arm sections,
the high-frequency circuit being connected to at least one of a pair of electrodes of the optical modulating section.

11. The optical modulator according to claim 10 , wherein the pair of electrodes is traveling-wave electrodes.

12. The optical modulator according to claim 11 , wherein:
the width of the signal line at a connection between the signal line and each of the traveling-wave electrodes is smaller than the width of the signal line at the start position of the junction segment; and
the width of the signal line gradually increases from the connection between the signal line and each of the traveling-wave electrodes toward the start position.

13. The optical modulator according to claim 11 , wherein the Mach-Zehnder optical interferometer includes a waveguide having a segment in which the traveling-wave electrodes are provided and which serves as a lateral p-n junction including p-type silicon and n-type silicon.

Assignees

• Fujikura Ltd

Inventors

• Matsumoto Ryokichi

Classifications

• G02F1/2257

  the optical waveguides being made of semiconducting material · CPC title

• G02F1/2255 Primary

  controlled by a high-frequency electromagnetic component in an electric waveguide structure · CPC title

• G02F2001/212

  Physics · mapped topic

• G02F1/212

  Mach-Zehnder type · CPC title