Photon counting detector

Patent metadata

Field	Value
Publication number	US-9423515-B2
Application number	US-201214237916-A
Country	US
Kind code	B2
Filing date	Aug 16, 2012
Priority date	Aug 30, 2011
Publication date	Aug 23, 2016
Grant date	Aug 23, 2016

Abstract

A detector array includes at least one direct conversion detector pixel ( 114 - 114 M) configured to detect photons of poly-chromatic ionizing radiation. The pixel includes a cathode layer ( 116 ), an anode layer ( 118 ) including an anode electrode ( 118 - 118 M ) for each of the at least one detector pixels, a direct conversion material ( 120 ), disposed between the cathode layer and the anode layer, and a gate electrode disposed in the direct conversion material, parallelto and between the cathode and anode layers.

First claim

The invention claimed is:

1. A detector array, comprising:
at least one direct conversion detector pixel configured to detect photons of poly-chromatic ionizing radiation, the pixel, comprising:
a cathode layer;
an anode layer including an anode electrode for each of the at least one detector pixels;
a direct conversion material, disposed between the cathode layer and the anode layer;
a gate electrode disposed in the direct conversion material, parallel to and between the cathode and anode layers; and
a pixel voltage controller in electrical communication with the gate electrode, wherein the pixel voltage controller is configured to alternatively apply one of two different voltages to the gate electrode during an imaging procedure based on a photon count rate over a predetermined counting period of time.

2. The detector array of claim 1 , further comprising:
a threshold bank including a higher flux rate threshold, wherein the pixel voltage controller compares the photon count rate with the higher flux rate threshold and changes the voltage applied to the gate electrode from a voltage different than a voltage of the cathode layer to a voltage approximately equal to the voltage of the cathode layer in response to the photon count rate satisfying the higher flux rate threshold.

3. The detector array of claim 2 , wherein a first region of the direct conversion material between the gate electrode and the anode layer is sensitive to the photons and a second region of the direct conversion material between the gate electrode and the cathode layer is not sensitive to the photons when the voltage applied to the gate electrode is approximately equal to the voltage of the cathode layer and only photons absorbed in the first region are converted to electrical signals.

4. The detector array of claim 3 , wherein a percentage of the total amount of the direct conversion material that is not sensitive to the photons is less than a percentage in a reduction in the count rate due to the second region.

5. The detector array of claim 4 , wherein a reduction in an amount of the direct conversion material used to convert photons when switching the gate electrode voltage to the cathode layer voltage corresponds to a greater and non-linear reduction in the count rate.

6. The detector array of claim 4 , further comprising:
a threshold bank including a higher flux rate threshold, wherein the pixel voltage controller compares the photon count rate with the higher flux rate threshold and changes the voltage applied to the cathode layer from a voltage different than a voltage of the gate electrode to a voltage approximately equal to the voltage of the gate electrode in response to the photon count rate satisfying the higher flux rate threshold.

7. The detector array of claim 6 , wherein a first region of the direct conversion material between the gate electrode and the anode layer is sensitive to the photons and a second region of the direct conversion material between the gate electrode and the cathode layer is not sensitive to the photons when the voltage applied to the cathode layer is approximately equal to the voltage of the gate electrode and only photons absorbed in the first region are converted to electrical signals.

8. The detector array of claim 7 , wherein a percentage of the total amount of the direct conversion material that is not sensitive to the photons is less than a percentage in a reduction in the count rate due to the second region.

9. The detector array of claim 6 , wherein the threshold bank further includes a lower flux rate threshold, wherein the lower flux rate threshold is lower than the higher flux rate threshold, and the pixel voltage controller compares the photon count rate with the lower flux rate threshold and changes the voltage applied to the cathode layer from the voltage approximately equal to the voltage of the gate electrode to the voltage different than the voltage of the gate electrode in response to the photon count rate satisfying the lower flux rate threshold.

10. The detector array of claim 9 , wherein a region of the direct conversion material between the cathode layer and the anode layer is sensitive to the photons such that photons absorbed in this region are converted to electrical signals.

11. The detector array of claim 6 , wherein the reduction in an amount of the direct conversion material used to convert photons when switching the cathode layer voltage to the gate electrode voltage corresponds to a greater and non-linear reduction in the count rate.

12. The detector array of claim 2 , wherein the threshold bank further includes a lower flux rate threshold, wherein the lower flux rate threshold is lower than the higher flux rate threshold, and the pixel voltage controller compares the photon count rate with the lower flux rate threshold and changes the voltage applied to the gate electrode from the voltage approximately equal to the voltage of the cathode layer to the voltage different than the voltage of the cathode layer in response to the photon count rate satisfying the lower flux rate threshold.

13. The detector array of claim 12 , wherein a region of the direct conversion material between the cathode layer and the anode layer is sensitive to the photons such that photons absorbed in this region are converted to electrical signals.

14. The detector array of claim 1 , the detector array, further comprising:
at least one detector module including a plurality of the direct conversion detector pixels, wherein a single gate electrode extends through two or more of the plurality of direct conversion detector pixels and is used to apply a same gate voltage to the two or more of the plurality of direct conversion detector pixels.

15. The detector array of claim 1 , the detector array, further comprising:
at least one detector module including a plurality of the direct conversion detector pixels; and
a different gate electrode for at least two different detector pixels of the module.

16. The detector array of claim 1 , the direct conversion material, comprising:
at least a second gate electrode disposed in the direct conversion material, parallel to the cathode layer and the anode layer, between the cathode layer and the anode layer, and located at a different position relative to the gate electrode.

17. A method of detecting, for higher photon flux rates, photons with a direct conversion detector having at least one detector pixel with a direct conversion material including a gate electrode and disposed between a cathode and an anode of the pixel, the method comprising:
applying a first voltage to the gate electrode, wherein the first voltage is not equal to a voltage applied to the cathode, and the first voltage causes approximately the entire direct conversion material to be used to convert photons incident on the detector pixel to corresponding signals indicative of an energy of the photons;
counting a number of photons detected in a predetermined time interval based on the signals;
determining a count rate based on the number of counted photons and the predetermined time interval;
comparing the determined count rate with a higher photon flux rate threshold; and
removing the first voltage and applying a second voltage to the gate electrode in response to the determined count rate satisfying the higher photon flux rate threshold, wherein the second voltage is approximately equal to the voltage applied to the cathode, and the second voltage causes less than the entire direct conversion material to be used to convert photons incident on the detect

Assignees

• Roessl Ewald
• Proksa Roland
• Koninklijke Philips Nv

Inventors

• Roessl Ewald
• Proksa Roland

Classifications

• G01T1/24 Primary

  with semiconductor detectors · CPC title

• G01T1/247

  Detector read-out circuitry (for processing gain or off-set correction H04N) · CPC title

• G01T1/241 Primary

  Electrode arrangements, e.g. continuous or parallel strips or the like · CPC title