Wafer processing apparatus and wafer processing method
US-2024395512-A1 · Nov 28, 2024 · US
US9422627B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9422627-B2 |
| Application number | US-201314398126-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 18, 2013 |
| Priority date | May 2, 2012 |
| Publication date | Aug 23, 2016 |
| Grant date | Aug 23, 2016 |
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Official abstract text for this publication.
Provided is a hard film for a cutting tool formed on a surface of a base material, the hard film being comprised of a nano multi-layered structure formed by sequentially stacking a thin layer A, a thin layer B, a thin layer C and a thin layer D or being comprised of a structure formed by repeatedly stacking the nano multi-layered structure at least twice, wherein the thin layer A is comprised of Ti x Al 1-x N (0.5≦x≦0.7); the thin layer B is comprised of Al 1-y-z Ti y Me z N (0.4≦y≦0.7, 0<z≦0.1 where Me is at least one of Si, Cr, and Nb); the thin layer C is comprised of Al a Ti 1-a N (0.5≦a≦0.7); and the thin layer D is comprised of Al b Cr 1-b N (0.5≦b≦0.7).
Opening claim text (preview).
The invention claimed is: 1. A hard film for a cutting tool formed on a surface of a base material, comprising: a nano multi-layered structure comprising a thin layer A, a thin layer B, a thin layer C and a thin layer D, which are sequentially stacked on the surface of the base material, wherein the nano multi-layered structure is repeatedly stacked at least twice, wherein, the thin layer A is comprised of Ti x Al 1-x N(0.5≦x≦0.7), the thin layer B is comprised of Al 1-y-z Ti y Me z N (0.4≦y≦0.7, 0<z≦0.1 where Me is at least one of Si, Cr, and Nb), the thin layer C is comprised of Al a Ti 1-a N(0.5<a≦0.7), and the thin layer D is comprised of Al b Cr 1-b N(0.5≦b≦0.7). 2. The hard film of claim 1 , wherein each of the thin layer A, the thin layer B, the thin layer C and the thin layer D has an average thickness of 3 nm to 50 nm. 3. The hard film of claim 1 , wherein each of the thin layer A, the thin layer B, the thin layer C and the thin layer D has an average thickness of 20 nm to 40 nm. 4. The hard film of claim 1 , wherein the hard film has an average thickness of 1 μm to 20 μm. 5. The hard film of claim 1 , wherein the hard film has a degradation hardness not less than 35 GPa or more when degradation-treated at a temperature of 900° C. for 30 minutes.
No layer or component greater than 5 mils thick · CPC title
including at least one metal matrix material comprising a mixture of at least two metals or metal phases or metal matrix composites, e.g. metal matrix with embedded inorganic hard particles, CERMET, MMC. · CPC title
1 mil or less · CPC title
Nitrides (C23C14/0617 takes precedence) · CPC title
by explosion; by evaporation and subsequent ionisation of the vapours {, e.g. ion-plating}(C23C14/34 - C23C14/48 take precedence) · CPC title
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