Pressure sensor

Patent metadata

Field	Value
Publication number	US-9422150-B2
Application number	US-201414584625-A
Country	US
Kind code	B2
Filing date	Dec 29, 2014
Priority date	Mar 20, 2014
Publication date	Aug 23, 2016
Grant date	Aug 23, 2016

Abstract

According to one embodiment, a pressure sensor includes: a support section; a film section; and a strain sensing element. The film section is supported by the support section and deformable. The film section includes a first film and a second film. The first film includes a first region located in a central part and a second region located in a peripheral part around the first region. The second film is provided on the first region. The strain sensing element is provided on part of the second region. The strain sensing element includes a first magnetic layer; a second magnetic layer; and an intermediate layer. Magnetization of the first magnetic layer changes in response to deformation of the second region. The intermediate layer is provided between the first magnetic layer and the second magnetic layer.

First claim

The invention claimed is:

1. A pressure sensor comprising:
a support section;
a film section supported by the support section, being deformable, and including a first film and a second film, the first film including a first region located in a central part and a second region located in a peripheral part around the first region, and the second film being provided on the first region; and
a strain sensing element provided on part of the second region and including:
a first magnetic layer with a magnetization changing in response to deformation of the second region;
a second magnetic layer; and
an intermediate layer provided between the first magnetic layer and the second magnetic layer.

2. The sensor according to claim 1 , wherein the second film is shaped integrally with the first film.

3. The sensor according to claim 1 , wherein material of the second film is different from material of the first film.

4. The sensor according to claim 1 , wherein Young's modulus of the second film is larger than Young's modulus of the first film.

5. The sensor according to claim 1 , wherein value of stress remaining in the second film is relatively more tensile than value of stress remaining in the first film.

6. The sensor according to claim 1 , wherein the strain sensing element further includes an electrode provided between the first magnetic layer and the film section.

7. The sensor according to claim 1 , wherein the strain sensing element is placed between a center point of a straight line connecting a boundary between the first region and the second region to an end part of the support section having nearest distance from the boundary and the end part.

8. The sensor according to claim 1 , wherein the strain sensing element is provided in a plurality.

9. The sensor according to claim 1 , wherein ratio (a/b) of sum (a) of film thickness of the first film and film thickness of the second film in the first region to film thickness (b) of the second region is 1.1 or more and 4 or less.

10. The sensor according to claim 1 , wherein the first film includes at least one material selected from the group consisting of semiconductor, insulator, oxide, and nitride.

11. The sensor according to claim 1 , wherein the first film includes at least one material selected from the group consisting of silicon, silicon oxide, and silicon nitride.

12. The sensor according to claim 1 , wherein the second film includes a metal.

13. The sensor according to claim 1 , wherein the first film and the second film include silicon nitride (Si—N), and content of nitrogen contained in the second film is lower than content of nitrogen contained in the first film.

14. The sensor according to claim 1 , wherein ratio (c/d) of distance (c) from center of the first region to boundary between the first region and the second region versus distance (d) from the center of the first region to a nearest one of the support sections is 0.5 or more and 0.97 or less.

15. The sensor according to claim 1 , wherein the second film includes at least one metal selected from the group consisting of gold (Au), silver (Ag), copper (Cu), aluminum (Al), and molybdenum (Mo).

16. The sensor according to claim 1 , wherein the second film includes amorphous silicon.

17. The sensor according to claim 1 , wherein the second film includes a film in which an impurity is added to the first film.

18. A pressure sensor comprising:
a support section;
a film section supported by the support section, being deformable, and including a first region located in a central part and a second region located in a peripheral part around the first region, material of the first region being different from material of the second region; and
a strain sensing element provided on part of the second region and including:
a first magnetic layer with a magnetization changing in response to deformation of the second region;
a second magnetic layer; and
an intermediate layer provided between the first magnetic layer and the second magnetic layer.

19. A pressure sensor comprising:
a support section;
a film section supported by the support section, being deformable, and including a first region located in a central part and a second region located in a peripheral part around the first region, Young's modulus of the first region being larger than Young's modulus of the second region; and
a strain sensing element provided on part of the second region and including:
a first magnetic layer with a magnetization changing in response to deformation of the second region;
a second magnetic layer; and
an intermediate layer provided between the first magnetic layer and the second magnetic layer.

20. A pressure sensor comprising:
a support section;
a film section supported by the support section, being deformable, and including a first region located in a central part and a second region located in a peripheral part around the first region, value of stress remaining in the first region being relatively more tensile than value of stress remaining in the second region; and
a strain sensing element provided on part of the second region and including:
a first magnetic layer with a magnetization changing in response to deformation of the second region;
a second magnetic layer; and
an intermediate layer provided between the first magnetic layer and the second magnetic layer.

Assignees

• Toshiba Kk

Inventors

• Okamoto Kazuaki
• Fukuzawa Hideaki
• Fuji Yoshihiko
• Yuzawa Akiko
• Hori Akio
• Masunishi Kei

Classifications

• G01L9/16

  by making use of variations in the magnetic properties of material resulting from the application of stress · CPC title

• G01L1/12

  by measuring variations in the magnetic properties of materials resulting from the application of stress · CPC title

• B81B3/0091

  Magnetic properties, e.g. guiding magnetic flux · CPC title

• B81B2201/0257

  Microphones or microspeakers · CPC title

• B81B3/0051 Primary

  For defining the movement, i.e. structures that guide or limit the movement of an element (mechanical arrangements for preventing or damping vibration or shock H01H3/60) · CPC title