Conductive substrate comprising a metal fine particle sintered film

US9420698B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9420698-B2
Application numberUS-201013202425-A
CountryUS
Kind codeB2
Filing dateFeb 19, 2010
Priority dateFeb 20, 2009
Publication dateAug 16, 2016
Grant dateAug 16, 2016

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  7. Citations and related patents

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Abstract

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Provided is a conductive substrate which is prepared by forming a pattern-shaped metal fine particle sintered film such as a copper wiring and the like on a base material of polyimide and the like and which has a high adhesive property with the base material and is provided with an excellent conductivity. The conductive substrate of the present invention is prepared by printing a coating liquid containing metal or metal oxide fine particles on a base material to form a print layer and subjecting the above print layer to sintering treatment to form a metal fine particle sintered film, wherein a crystallite diameter in the metal fine particle sintered film which is measured by X ray diffraction is 25 nm or more, and a cross section of the metal fine particle sintered film has a void rate of 1% or less.

First claim

Opening claim text (preview).

What is claimed is: 1. A conductive substrate prepared by printing a coating liquid containing metal or metal oxide fine particles on a base material to form a print layer and subjecting the above print layer to sintering treatment to form a metal fine particle sintered film, wherein a crystallite diameter in the metal fine particle sintered film which is measured by X ray diffraction is 25 nm or more, and in a cross section transecting the metal fine particle sintered film and base material the metal fine particle sintered film has a void rate of 1% or less. 2. The conductive substrate according to claim 1 , wherein a carbon content of an inside of the metal fine particle sintered film which is measured by an X ray photoelectron spectroscopy is less than 5%. 3. The conductive substrate according to claim 1 , wherein the metal or the metal oxide is at least one selected from copper, copper oxide and copper having an oxidized surface. 4. The conductive substrate according to claim 3 , wherein the metal fine particle sintered film comprises a copper nanoparticle sintered film having a peak area of a (111) face that is more than twice as large as a peak area of a (200) face in an X ray diffraction pattern of the copper nanoparticle sintered film. 5. The conductive substrate according to claim 1 , wherein a heterogeneous metal layer or a metal oxide layer is not provided between the metal fine particle sintered film and the base material. 6. The conductive substrate according to claim 1 , wherein the base material is a polyimide resin. 7. The conductive substrate according to claim 1 , wherein the sintering is carried out under an inert gas atmosphere or a reducing as atmosphere. 8. The conductive substrate according to claim 1 , wherein the sintering is carried out by a surface wave plasma generated by applying a microwave energy. 9. A production process for a conductive substrate comprising a step of printing a coating liquid containing metal or metal oxide fine particles on a base material to form a print layer and a step of subjecting the above print layer to sintering treatment to form a metal fine particle sintered film, wherein a crystallite diameter in the metal fine particle sintered film which is measured by X ray diffraction is 25 nm or more, and in a cross section transecting the metal fine particle sintered film and base material the metal fine particle sintered film has a void rate of 1% or less. 10. The production process for a conductive substrate according to claim 9 , wherein a carbon content of an inside of the metal fine particle sintered film which is measured by an X ray photoelectron spectroscopy is less than 5%. 11. The production process for a conductive substrate according to claim 9 , wherein the metal or the metal oxide is at least one selected from copper, copper oxide and copper having an oxidized surface. 12. The production process for a conductive substrate according to claim 11 , wherein the metal fine particle sintered film comprises a copper nanoparticle sintered film having a peak area of a (111) face that is more than twice as large as a peak area of a (200) face in an X ray diffraction pattern of the copper nanoparticle sintered film. 13. The production process for a conductive substrate according to claim 9 , wherein a heterogeneous metal layer or a metal oxide layer is not provided between the metal fine particle sintered film and the base material. 14. The production process for a conductive substrate according to claim 9 , wherein the base material is a polyimide resin. 15. The production process for a conductive substrate according to claim 9 , wherein the sintering is carried out under an inert gas atmosphere or a reducing as atmosphere. 16. The production process for a conductive substrate according to claim 9 , wherein the sintering is carried out by a surface wave plasma generated by applying a microwave energy. 17. The production process for a conductive substrate according to claim 16 , wherein the sintering treatment is carried out at a heating rate of 100° C./minute or more. 18. The conductive substrate according to claim 1 , wherein the metal fine particle sintered film forms a conductive layer. 19. The production process for a conductive substrate according to claim 9 , wherein the metal fine particle sintered film forms a conductive layer. 20. A conductive substrate prepared by printing a coating liquid containing metal or metal oxide fine particles on a base material to form a print layer and subjecting the above print layer to sintering treatment to form a metal fine particle sintered film, wherein a crystallite diameter in the metal fine particle sintered film which is measured by X ray diffraction is 25 nm or more, and a cross section transecting the metal fine particle sintered film and base material the metal fine particle sintered film has a void rate of 1% or less, and wherein a heterogeneous metal layer or a metal oxide layer is not provided between the metal fine particle sintered film and the base material.

Assignees

Inventors

Classifications

  • Flexible materials (H05K1/038 takes precedence; specific organic compositions are classified in H05K1/0313 and subgroups) · CPC title

  • Sintering, i.e. fusing of metal particles to achieve or improve electrical conductivity · CPC title

  • H05K3/1283Primary

    After-treatment of the printed patterns, e.g. sintering or curing methods · CPC title

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What does patent US9420698B2 cover?
Provided is a conductive substrate which is prepared by forming a pattern-shaped metal fine particle sintered film such as a copper wiring and the like on a base material of polyimide and the like and which has a high adhesive property with the base material and is provided with an excellent conductivity. The conductive substrate of the present invention is prepared by printing a coating …
Who is the assignee on this patent?
Yoshi Naonobu, Hojo Mikiko, Dainippon Printing Co Ltd
What technology area does this patent fall under?
Primary CPC classification H05K3/1283. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Aug 16 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).