Target, method for producing the same, memory, and method for producing the same

Patent metadata

Field	Value
Publication number	US-9419214-B2
Application number	US-201414174917-A
Country	US
Kind code	B2
Filing date	Feb 7, 2014
Priority date	Jul 28, 2009
Publication date	Aug 16, 2016
Grant date	Aug 16, 2016

Abstract

A target including: at least one refractory metal element selected from the group consisting of Ti, Zr, Hf, V, Nb, Ta, and lanthanoids; at least one element selected from the group consisting of Al, Ge, Zn, Co, Cu, Ni, Fe, Si, Mg, and Ga; and at least one chalcogen element selected from the group consisting of S, Se, and Te. And a method for producing the target.

First claim

What is claimed is:

1. A method for producing a target containing a chalcogen element, comprising the steps of:
forming an alloy ingot by combining at least one refractory metal element selected from a first group consisting of Ti, Zr, Hf, V, Nb, Ta, and lanthanoids and an additional element outside of the first group and selected from a second group consisting of Al, Ge, Zn, Co, Cu, Ni, Fe, Si, Mg, and Ga;
pulverizing the alloy ingot; and
forming a target by combining the pulverized alloy ingot and at least one chalcogen element selected from the group consisting of S, Se, and Te.

2. A method for producing a target according to claim 1 , wherein in the step of forming an alloy ingot, a material having a particle diameter of 100 μm or more is used as the at least one refractory metal element that serves as a raw material.

3. A method for producing a target according to claim 1 , further comprising the steps of:
alloying the at least one chalcogen element and at least one additional element that is not a chalcogen element to form a second alloy ingot including the at least one chalcogen element; and
pulverizing the second alloy ingot,
wherein,
the step of forming a target is performed using the pulverized alloy ingot and the pulverized second alloy ingot.

4. A method for producing a target according to claim 3 , wherein the second alloy ingot has a melting point higher than the melting point of the at least one chalcogen element.

5. A method for producing a target according to claim 3 , wherein the second alloy ingot is formed using as the at least one additional element that is not a chalcogen element at least one element selected from the group consisting of Al, Ge, Zn, Co, Cu, Ni, Fe, Si, Mg, and Ga.

Assignees

• Sony Corp

Inventors

• Ohba Kazuhiro
• Kamori Yuichi
• Kimura Hitoshi

Classifications

• C22C1/05

  Mixtures of metal powder with non-metallic powder (C22C1/08 takes precedence) · CPC title

• C23C14/3414 Primary

  Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy · CPC title

• Y10T428/31678

  Of metal · CPC title

• B22F9/04 Primary

  starting from solid material, e.g. by crushing, grinding or milling ({C22C1/1084 takes precedence}; crushing, grinding or milling, in general, see the relevant subclasses, e.g. B02C) · CPC title

• C23C14/14

  Metallic material, boron or silicon · CPC title