Transparent quantum dot light-emitting diodes with dielectric/metal/dielectric electrode

Patent metadata

Field	Value
Publication number	US-9419174-B2
Application number	US-201314424540-A
Country	US
Kind code	B2
Filing date	Sep 26, 2013
Priority date	Sep 26, 2012
Publication date	Aug 16, 2016
Grant date	Aug 16, 2016

Abstract

Quantum dot light emitting diodes (QD-LEDs) are formed that are transparent and emit light from the top and bottom faces. At least one electrode of the QD-LEDs is a dielectric/metal/dielectric layered structure, where the first dielectric comprises metal oxide nanoparticles or polymer-nanoparticle blends and is 10 to 40 nm in thickness, the metal layer is 5 to 25 nm in thickness, and the second dielectric layer is a nanoparticulate, polymer-nanoparticle blend or continuous layer of 30 to 200 nm in thickness and is situated distal to the light emitting layer of the QD-LED.

First claim

We claim:

1. A quantum dot light emitting diode (QD-LED) comprising:
a light emitting layer comprising a plurality of quantum dots (QDs); and
at least one dielectric/metal/dielectric (DMD) electrode comprising a first dielectric layer proximal to the light emitting layer, a metal layer and a second dielectric layer distal to the light emitting layer, wherein the first dielectric layer and the second dielectric layer comprise nanoparticles or polymer-nanoparticle blends, wherein the DMD electrode is a transparent cathode.

2. The QD-LED of claim 1 , wherein said QDs comprise Group II-VI compound semiconductor nanocrystals, Group III-V or IV-VI compound semiconductor nanocrystals, CuInS 2 , CuInSe 2 nanocrystals, metal oxide nanoparticles, core-shell structured nanocrystals, semiconductor nanocrystals doped with rare earth elements or transition metal elements or any combination thereof.

3. The QD-LED of claim 2 , wherein said Group II-VI compound semiconductor nanocrystals comprise CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, HgTe, CdSTe, alloys thereof, or any mixtures thereof.

4. The QD-LED of claim 2 , wherein said Group III-V or IV-VI compound semiconductor nanocrystals comprise GaP, GaAs, GaSb, InP, InAs, InSb, PbS, PbSe, PbTe, alloys thereof, or any mixtures thereof.

5. The QD-LED of claim 2 , wherein said metal oxide nanoparticles comprise ZnO, TiO 2 , or a combination thereof.

6. The QD-LED of claim 2 , wherein said core-shell structured nanocrystals comprise CdSe/ZnSe, CdSe/CdS, CdSe/ZnS, CdS/ZnSe, CdS/ZnS, ZnSe/ZnS, InP/ZnS, ZnO/MgO, CuInS 2 /ZnS, CuInSe 2 /ZnS, alloys thereof, or any mixtures thereof.

7. The QD-LED of claim 2 , wherein said semiconductor nanoparticles doped with rare earth element comprise Eu, Er, Tb, Tm, Dy or any combination thereof.

8. The QD-LED of claim 1 , wherein said first dielectric layer comprises nanoparticles.

9. The QD-LED of claim 1 , wherein said first dielectric layer comprises polymer-nanoparticle blends.

10. The QD-LED of claim 1 , wherein said first dielectric layer comprises ZnO, TiO 2 , Cs 2 O, MoO 3 , WO 3 , NiO, Cr 2 O 3 , V 2 O 5 , or any combination thereof.

11. The QD-LED of claim 1 , wherein said first dielectric layer comprises a polymer containing ZnO, TiO 2 , Cs 2 O, MoO 3 , WO 3 , NiO, Cr 2 O 3 , or V 2 O 5 .

12. The QD-LED of claim 1 , wherein said first dielectric layer is 10 to 60 nm in thickness.

13. The QD-LED of claim 1 , wherein said metal layer of said DMD electrode comprises Ag, Au, Al, Ca, Mg, Cu, Mo or Mg:Ag alloy.

14. The QD-LED of claim 1 , wherein said metal layer of said DMD electrode is 5 to 25 nm in thickness.

15. The QD-LED of claim 1 , wherein said second dielectric layer comprises ZnO, ZnS, ZnSe, MoO 3 , WO 3 , TiO 2 , Al 2 O 3 , V 2 O 5 , Cr 2 O 3 , SiO 2 , SiN x , or any combination thereof.

16. The QD-LED of claim 1 , wherein said second dielectric layer comprises polymer blends with ZnO, ZnS, ZnSe, MoO 3 , WO 3 , TiO 2 , Al 2 O 3 , V 2 O 5 , Cr 2 O 3 , SiO 2 , SiN x , or any combination thereof.

17. The QD-LED of claim 1 , wherein said second dielectric layer is 30 to 200 nm in thickness.

18. The QD-LED of claim 1 , wherein light is emitted from the top and bottom faces of said QD-LED.

Assignees

• Univ Florida

Inventors

• Zheng Ying
• Cao Weiran
• Xue Jiangeng
• Holloway Paul H

Classifications

• H05B33/22

  characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers · CPC title

• C09K11/883

  with zinc or cadmium · CPC title

• C09K11/565 Primary

  with zinc cadmium · CPC title

• H05B33/14

  characterised by the chemical or physical composition or the arrangement of the electroluminescent material {, or by the simultaneous addition of the electroluminescent material in or onto the light source} · CPC title

• H05B33/26

  characterised by the composition or arrangement of the conductive material used as an electrode · CPC title