Transistor contacts and methods of forming the same
US-2024395871-A1 · Nov 28, 2024 · US
US9419112B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9419112-B2 |
| Application number | US-201214647360-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 17, 2012 |
| Priority date | Nov 30, 2012 |
| Publication date | Aug 16, 2016 |
| Grant date | Aug 16, 2016 |
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A method for manufacturing a fin structure is provided. A method according to an embodiment may include: forming a patterned pattern transfer layer on a substrate; forming a first spacer on sidewalls of the pattern transfer layer; forming a second spacer on sidewalls of the first spacer; selectively removing the pattern transfer layer and the first spacer; and patterning the substrate with the second spacer as a mask, so as to form an initial fin.
Opening claim text (preview).
We claim: 1. A method for manufacturing a fin structure, comprising: forming a patterned pattern transfer layer on a substrate; forming a first spacer on sidewalls of the pattern transfer layer with the same material as the pattern transfer layer; forming a second spacer on sidewalls of the first spacer; selectively removing the pattern transfer layer and the first spacer at the same time; and patterning the substrate with the second spacer as a mask, so as to form an init…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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