Light emitting diodes having zinc oxide fibers over silicon substrates
US-9231053-B2 · Jan 5, 2016 · US
Reusable substrate bases, semiconductor devices using such reusable substrate bases, and methods for making the reusable substrate bases
US9419081B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9419081-B2 |
| Application number | US-201414465016-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 21, 2014 |
| Priority date | Aug 21, 2014 |
| Publication date | Aug 16, 2016 |
| Grant date | Aug 16, 2016 |
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Abstract
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Reusable substrate bases for producing multilayer semiconductor devices are provided, as well as free-standing semiconductor devices and reusable substrate bases produced for the multilayer semiconductor devices. The reusable substrate bases comprise a Si-based substrate, a transition lattice overlayed thereon, and a sacrificial ZnO-based layer overlayed on the transition lattice. The transition lattice comprises alternating transition layers of aluminum nitride (AlN) and GaN or Al-doped GaN. The multilayer semiconductor devices comprise the aforesaid reusable substrate bases and a semiconductor stack which comprises a pair of p-n junction forming layers. Methods for producing the multilayer semiconductor devices, the reusable substrate base, as well as free standing semiconductor devices detached from the reusable substrate bases, are also provided.
First claim
Opening claim text (preview).
What is claimed is: 1. A reusable substrate base useful for production of semiconductor devices comprising: a Si-based substrate; a transition lattice overlaying said Si-based substrate and comprising two or more alternating transition layers, wherein the alternating transition layers comprise a first transition layer that comprises AlN and that overlays said Si-based substrate, and a second transition layer that comprises either GaN or GaN doped with Al, and that overlays said…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9419081B2 cover?
- Reusable substrate bases for producing multilayer semiconductor devices are provided, as well as free-standing semiconductor devices and reusable substrate bases produced for the multilayer semiconductor devices. The reusable substrate bases comprise a Si-based substrate, a transition lattice overlayed thereon, and a sacrificial ZnO-based layer overlayed on the transition lattice. The transitio…
- Who is the assignee on this patent?
- Honeywell Int Inc
- What technology area does this patent fall under?
- Primary CPC classification H10D62/8503. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Aug 16 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).