Non-lithographically patterned directed self assembly alignment promotion layers

Patent metadata

Field	Value
Publication number	US-9418888-B2
Application number	US-201314778562-A
Country	US
Kind code	B2
Filing date	Jun 27, 2013
Priority date	Jun 27, 2013
Publication date	Aug 16, 2016
Grant date	Aug 16, 2016

Abstract

A method of an aspect includes forming a directed self assembly alignment promotion layer over a surface of a substrate having a first patterned region and a second patterned region. A first directed self assembly alignment promotion material is formed selectively over the first patterned region without using lithographic patterning. The method also includes forming an assembled layer over the directed self assembly alignment promotion layer by directed self assembly. A plurality of assembled structures are formed that each include predominantly a first type of polymer over the first directed self assembly alignment promotion material. The assembled structures are each adjacently surrounded by predominantly a second different type of polymer over the second patterned region. The first directed self assembly alignment promotion material has a greater chemical affinity for the first type of polymer than for the second different type of polymer.

First claim

What is claimed is:

1. A fabrication method comprising:
forming a directed self assembly alignment promotion layer over a surface of a substrate having a first patterned region and a second patterned region, the forming of the directed self assembly alignment promotion layer including forming a first directed self assembly alignment promotion material selectively over the first patterned region, the forming of the first directed self assembly alignment promotion material selectively over the first patterned region performed without using lithographic patterning; and
forming an assembled layer over the directed self assembly alignment promotion layer by directed self assembly, the forming of the assembled layer including forming a plurality of assembled structures that each include predominantly a first type of polymer over the first directed self assembly alignment promotion material and that are each adjacently surrounded by predominantly a second different type of polymer over the second patterned region, the first directed self assembly alignment promotion material having a greater chemical affinity for the first type of polymer than for the second different type of polymer.

2. The method of claim 1 , wherein the forming of the first directed self assembly alignment promotion material selectively over the first patterned region comprises performing a reaction that is preferential to a material of the first patterned region over a second different material of the second patterned region.

3. The method of claim 2 , wherein one of the material of the first patterned region and the second different material of the second patterned region is a metal material and another is a dielectric material.

4. The method of claim 2 , wherein the performing the reaction comprises at least one of:
reacting at least one of an aminosilane, a halosilane, and an alkoxysilane with hydroxylated groups of the first patterned region;
reacting a functional group of a polymer with the hydroxylated groups of the first patterned region;
reacting a phosphonic acid with a metal of the first patterned region;
reacting a thiol with the metal of the first patterned region;
reacting at least one of triazole and a corrosion inhibitor with the metal of the first patterned region;
reacting 1, 2, 4 triazole with the metal of the first patterned region;
reacting a heterocycle corrosion inhibitors with the metal of the first patterned region; and
reacting a multi-functional electrophile with hydroxylated groups of the first patterned region.

5. The method of claim 1 , wherein the forming of the first directed self assembly alignment promotion material selectively over the first patterned region comprises:
introducing the first directed self assembly alignment promotion material over top surfaces of both the first and second patterned regions, the top surface of the first patterned region recessed relative to the top surface of the second patterned region; and
removing the first directed self assembly alignment promotion material from over the top surface of the second patterned region, while leaving the first directed self assembly alignment promotion material over the top surface of the first patterned region.

6. The method of claim 5 , wherein the removing the first directed self assembly alignment promotion material comprises performing at least one of etching, chemical mechanical polishing, and a thermal treatment to remove the first directed self assembly alignment promotion material.

7. The method of claim 5 , further comprising, after the forming of the first directed self assembly alignment promotion material selectively over the first patterned region, forming a second different directed self assembly alignment promotion material selectively over the second patterned region, but not over the first patterned region, by performing a reaction that is preferential to a material of the top surface of the second patterned region as compared to the first directed self assembly alignment promotion material which remains over the top surface of the first patterned region.

8. The method of claim 1 , wherein the forming of the directed self assembly alignment promotion layer comprises:
forming the first directed self assembly alignment promotion material selectively over a metal material of the first patterned region, the first directed self assembly alignment promotion material having the greater chemical affinity for the first type of polymer than for the second type of polymer; and
forming a second different directed self assembly alignment promotion material selectively over a dielectric material of the second patterned region, the second directed self assembly alignment promotion material having one of a greater chemical affinity for the second type of polymer than for the first type of polymer and a substantially same chemical affinity for the first and second types of polymers.

9. The method of claim 1 , wherein the forming of the first directed self assembly alignment promotion material selectively over the first patterned region comprises:
introducing the first directed self assembly alignment promotion material over both the first and second patterned regions, the first patterned region more porous than the second patterned region;
introducing the first directed self assembly alignment promotion material into pores of the first patterned region;
removing the first directed self assembly alignment promotion material from over the second patterned region while leaving the first directed self assembly alignment promotion material in the pores of the first patterned region.

10. The method of claim 1 , further comprising forming a second directed self assembly alignment promotion material selectively over the second patterned region but not over the first patterned region.

11. The method of claim 1 , wherein the forming of the directed self assembly alignment promotion layer comprises is over an interconnect line of one of the first and second patterned regions that has a width of no more than 20 nanometers.

12. An integrated circuit substrate comprising:
a substrate;
a surface of the substrate having a first patterned region having a first material and a second patterned region having a second different material;
a directed self assembly alignment promotion layer including a first directed self assembly alignment promotion material selectively over the first patterned region; and
an assembled layer over the directed self assembly alignment promotion layer, the assembled layer including a plurality of assembled structures each including predominantly a first type of polymer over the first directed self assembly alignment promotion material, and each adjacently surrounded by predominantly a second different type of polymer over the second patterned region, the first directed self assembly alignment promotion material having a greater chemical affinity for the first type of polymer than for the second type of polymer.

13. The integrated circuit substrate of claim 12 , wherein the first directed self assembly alignment promotion material is a reaction product of a precursor material that is capable of reacting preferentially to the first material as compared to the second material.

14. The integrated circuit substrate of claim 13 , wherein the first material is a metal material and the second material is a dielectric material.

15. The integrated circuit substrate of claim 14 , wherein the first directed self assembly alignment promotion material has the greater chemical affinity for the first type of polymer than for the second type of pol

Assignees

• Intel Corp

Inventors

• Bristol Robert L
• Hourani Rami
• Han Eungnak
• Blackwell James M

Classifications

• B81C1/00031

  Regular or irregular arrays of nanoscale structures, e.g. etch mask layer (photomechanical, e.g. photolithographic, production of textured or patterned surfaces G03F7/00; lithographic processes for making patterned surfaces using printing and stamping G03F7/0002) · CPC title

• B81C2201/0149

  Forming nanoscale microstructures using auto-arranging or self-assembling material · CPC title

• H10P95/06

  Planarisation of inorganic insulating materials · CPC title

• H10P76/20 Primary

  of masks comprising organic materials · CPC title

• H10P50/286

  of organic materials · CPC title