Cavity structure using patterned sacrificial layer

Patent metadata

Field	Value
Publication number	US-9418849-B2
Application number	US-201313911594-A
Country	US
Kind code	B2
Filing date	Jun 6, 2013
Priority date	Jun 6, 2013
Publication date	Aug 16, 2016
Grant date	Aug 16, 2016

Abstract

A method includes forming a sacrificial layer over a bottom substrate. The sacrificial layer is patterned based on a desired etching distance. A top layer is formed over the sacrificial layer. At least one release hole is formed through the top layer. The sacrificial layer is etched through the at least one release hole.

First claim

What is claimed is:

1. A method, comprising:
forming a sacrificial layer over a bottom substrate;
patterning the sacrificial layer to form at least one channel around a first anchor structure, wherein the first anchor structure is formed from a first portion of the sacrificial layer;
after patterning the sacrificial layer, forming a top layer over the sacrificial layer;
forming at least one release hole through the top layer; and
etching the sacrificial layer through the at least one release hole, at least a portion of the first anchor structure remaining after the etching the sacrificial layer through the at least one release hole.

2. The method of claim 1 , wherein the sacrificial layer is patterned by wet etching or dry etching.

3. The method of claim 1 , wherein multiple release holes of the at least one release hole are distributed around the first anchor structure.

4. The method of claim 1 , wherein the sacrificial layer is formed by chemical vapor deposition (CVD) or physical vapor deposition (PVD).

5. The method of claim 1 , wherein the top layer is formed by bonding a top substrate over the sacrificial layer.

6. The method of claim 5 , wherein the top substrate is bonded by fusion bonding.

7. The method of claim 1 , wherein the sacrificial layer comprises SiO 2 .

8. The method of claim 1 , wherein the bottom substrate comprises silicon.

9. The method of claim 1 , wherein the top layer comprises silicon.

10. A method, comprising:
forming a sacrificial layer over a bottom substrate;
patterning the sacrificial layer around an anchor structure in the sacrificial layer, wherein the anchor structure is formed from a portion of the sacrificial layer;
after patterning the sacrificial layer, forming a top layer over and contacting the sacrificial layer;
forming release holes through the top layer and distributed around the anchor structure; and
after forming the release holes, etching the sacrificial layer through the release holes, at least a portion of the anchor structure remaining after the etching the sacrificial layer through the release holes.

11. The method of claim 10 , wherein the sacrificial layer has at least one channel or cavity around the anchor structure.

12. The method of claim 10 , wherein the sacrificial layer is formed by chemical vapor deposition (CVD) or physical vapor deposition (PVD).

13. The method of claim 10 , wherein the top layer is formed by direct bonding a top substrate over the sacrificial layer.

14. The method of claim 10 , wherein the sacrificial layer comprises SiO 2 .

15. The method of claim 10 , wherein the bottom substrate and the top layer comprise silicon.

16. A method comprising:
depositing a sacrificial layer over a bottom substrate;
removing at least one portion of the sacrificial layer surrounding an anchor structure;
forming a top layer over the sacrificial layer;
forming at least one release hole through the top layer; and
etching the sacrificial layer through the at least one release hole to form at least one cavity surrounding the anchor structure in a plan view, wherein the anchor structure is defined by substantially straight lines or substantially smooth curves.

17. The method of claim 16 , wherein the top layer is formed by direct bonding a top substrate over the sacrificial layer.

18. The method of claim 16 , wherein depositing a sacrificial layer includes depositing silicon oxide using a chemical vapor deposition process or a physical vapor deposition process.

19. The method of claim 16 , wherein the anchor structure is formed from a portion of the sacrificial layer.

20. The method of claim 1 , further comprising:
forming a closed loop channel in the top layer around a second anchor structure formed from a second portion of the sacrificial layer; and
etching the sacrificial layer through the closed loop channel.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Chang Kuei-Sung
• Tsai Yi Heng

Classifications

• H10P76/4085 Primary

  characterised by the processes involved to create the masks · CPC title

• B81B2203/0315

  Cavities · CPC title

• B81C1/00047

  Cavities · CPC title

• H01L21/0337 Primary

  Electricity · mapped topic