Sense amplifier with transistor threshold compensation

Patent metadata

Field	Value
Publication number	US-9418714-B2
Application number	US-201313941151-A
Country	US
Kind code	B2
Filing date	Jul 12, 2013
Priority date	Jul 12, 2013
Publication date	Aug 16, 2016
Grant date	Aug 16, 2016

Abstract

One embodiment provides, in a sense amplifier for an electronic memory array in which a selected memory cell drives a developing voltage differential according to a logic state of the memory cell, a method to store the logic state. The method includes poising source voltages of first and second transistors at levels offset, respectively, by threshold voltages of the first and second transistors. The method also includes applying the voltage differential between a gate of the first transistor and a gate of the second transistor, the first and second transistors configured to oppose each other in a cross-coupled inverter stage of the sense amplifier.

First claim

The invention claimed is:

1. A sense amplifier for an electronic memory array in which a selected memory cell drives a developing voltage differential according to a logic state of the memory cell, the sense amplifier comprising:
a cross-coupled inverter stage having opposing first and second transistors, the cross-coupled inverter stage configured to sense and amplify the voltage differential when applied between a gate of the first transistor and a gate of the second transistor, and to store the logic state based on the amplified voltage differential; and
a compensation stage configured to poise source voltages of the first and second transistors at levels offset, respectively, by threshold voltages of the first and second transistors, wherein the compensation stage includes first and second capacitors having first plates coupled, respectively, to source terminals of the first and second transistors, the first and second capacitors coupled to a common voltage node at second plates that are opposite the first plates, and wherein the compensation stage is further configured to store the offset voltage level of the first transistor on the first capacitor and the offset voltage level of the second transistor on the second capacitor, the common voltage node driven to a voltage higher than ground voltage in response to assertion of a first control line when the offset voltage level of the first transistor is stored on the first capacitor and the offset voltage level of the second transistor is stored on the second capacitor, wherein assertion of the first control line also triggers a predetermined delay during which the source voltages of the first and second transistors remain at their respective offset voltage levels; wherein upon expiration of the predetermined delay, a second control line is asserted to initiate sensing and amplification of the voltage differential by the sense amplifier in a read operation.

2. The sense amplifier of claim 1 wherein the compensation stage includes a set of transistors configured to null the source voltages of the first and second transistors to ground voltage after the predetermined delay, during which the source voltages are poised at the offset voltage levels.

3. The sense amplifier of claim 2 wherein the compensation stage includes a delay element configured to control the set of transistors such that the source voltages of the first and second transistors are nulled only after the predetermined delay.

4. The sense amplifier of claim 3 wherein the delay element includes an inverter chain.

5. The sense amplifier of claim 3 wherein the first control line, when asserted, triggers the delay element to null the source voltages of the first and second transistors to ground voltage after the predetermined delay.

6. The sense amplifier of claim 1 wherein assertion of the second control line pulls the voltage at the common voltage node to a low logic level, causing the first and second plates of the first and second capacitors to be discharged to ground.

7. The sense amplifier of claim 6 wherein the first and second control lines are dropped low to end the read operation, causing the voltage at the common voltage node to increase, which turns off the set of transistors.

8. The sense amplifier of claim 7 wherein, after the end of the read operation, a third control line is pulled low to begin precharging bit lines coupled to the selected memory cell and is then asserted in response to the bit lines being precharged, causing the first control line to also be asserted, wherein a word line associated with the selected memory cell is also then asserted to begin another read operation.

Assignees

• Nvidia Corp

Inventors

• Sinangil Mahmut E
• Poulton John W

Classifications

• G11C11/41

  forming {static} cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger · CPC title

• G11C7/065 Primary

  Differential amplifiers of latching type · CPC title

• G11C29/028

  with adaption or trimming of parameters · CPC title

• G11C29/026

  in sense amplifiers · CPC title

• G11C11/419

  Read-write [R-W] circuits · CPC title