Semiconductor structure including optical device and method for manufacturing the same
US-2024230996-A1 · Jul 11, 2024 · US
US9417389B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9417389-B2 |
| Application number | US-201514829260-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 18, 2015 |
| Priority date | Nov 6, 2008 |
| Publication date | Aug 16, 2016 |
| Grant date | Aug 16, 2016 |
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A method and system for coupling optical signals into silicon optoelectronic chips are disclosed and may include coupling one or more optical signals into a back surface of a silicon photonic chip through a light path in a region where silicon is removed from said silicon photonic chip, wherein photonic devices may be integrated in layers on a front surface of the silicon photonic chip. Optical couplers, such as grating couplers, may receive the optical signals in the front surface. The optical signals may be coupled into the back surface of the chips via optical fibers and/or optical source assemblies. The region where silicon may be removed from said silicon photonic chip may comprise silicon dioxide. The chip may be bonded to a second chip. Optical signals may be reflected back to the optical couplers via metal reflectors, which may be integrated in dielectric layers on the chips.
Opening claim text (preview).
What is claimed is: 1. A method for processing signals, the method comprising: in a photonic transceiver comprising a silicon photonic chip, coupling one or more optical signals into a back surface of said silicon photonic chip through a light path in a region where silicon is removed from said silicon photonic chip, wherein photonic devices are integrated in layers on a front surface of said silicon photonic chip and said one or more optical signals are received by one or more optical couplers integrated in said layers on said front surface of said silicon photonic chip. 2. The method according to claim 1 , comprising coupling said one or more optical signals into said back surface of said silicon photonic chip via one or more optical fibers. 3. The method according to claim 1 , wherein said optical couplers comprise grating couplers. 4. The method according to claim 1 , comprising coupling an optical source signal for said photonic transceiver into said back surface of said silicon photonic chip via an optical source assembly bonded to said silicon photonic chip. 5. The method according to claim 1 , comprising coupling said one or more optical signals to said one or more grating couplers via an anti-reflective coating on said back surface of said silicon photonic chip. 6. The method according to claim 5 , wherein said region where silicon is removed from said silicon photonic chip comprises silicon dioxide. 7. The method according to claim 1 , wherein said front surface of said silicon photonic chip is bonded to a second chip. 8. The method according to claim 1 , comprising reflecting optical signals that pass through said one or more optical couplers back to said one or more optical couplers via one or more metal reflectors. 9. The method according to claim 8 , wherein said one or more metal reflectors are integrated in dielectric layers on said silicon photonic chip. 10. A system for processing signals, the system comprising: a photonic transceiver comprising a silicon photonic chip with photonic devices integrated in layers on a front surface of said silicon photonic chip and a light path in a region where silicon is removed from a back surface of said silicon photonic chip, wherein one or more optical signals are coupled into said back surface of said silicon photonic chip via said light path, and one or more optical couplers integrated in said layers on said front surface of said silicon photonic chip are operable to receive said one or more optical signals. 11. The system according to claim 10 , wherein said one or more optical signals are coupled into said back surface of said silicon photonic chip via one or more optical fibers coupled to said light path. 12. The system according to claim 11 , wherein said light path passes through a buried oxide layer in said silicon photonic chip. 13. The system according to claim 10 , wherein said optical couplers comprise grating couplers. 14. The system according to claim 10 , wherein an optical source signal is coupled into said back surface of said CMOS photonic chip via an optical source assembly. 15. The system according to claim 10 , wherein said one or more optical signals is coupled to said optical couplers through an anti-reflection coating on said back surface of said silicon photonic chip. 16. The system according to claim 15 , wherein said region where silicon is removed from said silicon photonic chip comprises silicon dioxide. 17. The system according to claim 10 , wherein said front surface of said silicon photonic chip is bonded to a second chip. 18. The system according to claim 10 , wherein said photonic devices are operable to reflect optical signals that pass through said one or more grating couplers back to said one or more grating couplers via one or more metal reflectors. 19. The system according to claim 18 , wherein said one or more metal reflectors are integrated in dielectric layers on said silicon photonic chip. 20. A system for processing signals, the system comprising: a photonic transceiver comprising a silicon photonic chip with photonic devices integrated beneath a stack of dielectric layers in a front surface of said silicon photonic chip, wherein said front surface of said silicon photonic chip is bonded to a second chip; and wherein one or more optical couplers integrated beneath a metal reflector embedded in said dielectric layers receive one or more optical signals coupled into a back surface of said silicon photonic chip through a region where silicon is removed from said silicon photonics chip.
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