Current sensor

Patent metadata

Field	Value
Publication number	US-9417269-B2
Application number	US-201214123820-A
Country	US
Kind code	B2
Filing date	Jun 26, 2012
Priority date	Jun 28, 2011
Publication date	Aug 16, 2016
Grant date	Aug 16, 2016

Abstract

A current sensor for measuring a current flowing through a conductor includes a sensor substrate, a magnetoelectric converter formed on a surface of the sensor substrate and configured to output a signal changing with an applied magnetic field, and a magnetic shield that surrounds the sensor substrate and the conductor to magnetically shield the inside from the outside. The output signal of the magnetoelectric converter changes with a magnetic filed applied along the formation surface of the sensor substrate. The magnetic shield has at least one gap for reducing magnetic saturation in the magnetic shield. The gap and the sensor substrate are located at the same height in a z-direction orthogonal to the formation surface of the sensor substrate.

First claim

What is claimed is:

1. A coreless current sensor for measuring a current flowing through a conductor, the current sensor comprising:
a supporting substrate;
a sensor substrate that is mounted on a surface of the supporting substrate, which is opposed to the conductor;
a magnetoelectric converter formed on a surface of the sensor substrate, which is opposite from a back surface of the sensor substrate that is mounted on the supporting substrate, the magnetoelectric converter being configured to output a signal that changes with an applied magnetic field, and
a magnetic shield that surrounds the sensor substrate and the conductor to magnetically shield the inside from the outside, wherein
the current is measured based on a change in the output signal caused by a magnetic field induced by the current,
the output signal of the magnetoelectric converter changes with a magnetic field applied along a formation surface of the sensor substrate, which forms the magnetoelectric converter,
the magnetic shield has two gaps for reducing magnetic saturation in the magnetic shield,
the two gaps and the sensor substrate are located at the same height in a z-direction orthogonal to the formation surface of the sensor substrate,
the sensor substrate is located in the center of the symmetrical portion of the magnetic shield, and
the two gaps face each other across the sensor substrate along a reference line that extends along the formation surface of the sensor substrate, which is opposed to the conductor, through the two gaps.

2. The current sensor according to claim 1 , wherein
the formation surface is parallel to a x-y plane defined by a x-direction and a y-direction that are orthogonal to each other,
an outline of an inner wall of the magnetic shield divided by a x-z plane defined by the x-direction and the z-direction passing the formation surface is symmetrical with respect to the reference line which extends along the x-direction and passes the formation surface, and
the two gaps are formed in a symmetrical portion of the magnetic shield.

3. The current sensor according to claim 1 , further comprising:
a bias magnet located inside the magnetic shield, wherein
the magnetoelectric converter is a magnetoresistive effect element having a resistance changing with the applied magnetic field along the formation surface,
the magnetoresistive effect element includes a pin layer, a free layer, and an interlayer,
a magnetization direction of the pin layer is fixed,
a magnetization direction of the free layer changes with the applied magnetic field along the formation surface,
the interlayer is non-magnetic and located between the free layer and the pin layer, and the bias magnet applies a bias magnetic field to the free layer.

4. The current sensor according to claim 1 , wherein
the center of each of the two gaps is located at the same height as the sensor substrate in the z-direction.

5. The current sensor according to claim 1 , further comprising:
a circuit substrate located inside the magnetic shield and having a circuit for processing the output signal of the magnetoelectric converter.

6. The current sensor according to claim 5 , wherein the sensor substrate and the circuit substrate are fixed to the supporting substrate.

7. The current sensor according to claim 6 , further comprising:
a molding resin covering the sensor substrate,
the circuit substrate, and
the supporting substrate.

8. The current sensor according to claim 7 , further comprising:
a spacer made from a non-magnetic material, wherein
the conductor and the molding resin covering the sensor substrate, the circuit substrate, and the supporting substrate are fixed inside the magnetic shield through the spacer.

Assignees

• Sakai Ryosuke
• Kinpara Takamasa
• Kurumado Norihiro
• Nomura Kousuke
• Denso Corp

Inventors

• Sakai Ryosuke
• Kinpara Takamasa
• Kurumado Norihiro
• Nomura Kousuke

Classifications

• G01R19/0092 Primary

  Measuring current only · CPC title

• G01R33/093

  using multilayer structures, e.g. giant magnetoresistance sensors (thin magnetic films H01F10/00) · CPC title

• G01R15/205 Primary

  using magneto-resistance devices, e.g. field plates · CPC title