Protective gas flow during wafer dechucking in pvd chamber
US-2024102153-A1 · Mar 28, 2024 · US
US9416437B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9416437-B2 |
| Application number | US-201313939535-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 11, 2013 |
| Priority date | Sep 14, 2012 |
| Publication date | Aug 16, 2016 |
| Grant date | Aug 16, 2016 |
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An evaporating device comprises a gas guiding element, an evaporating boat received in the gas guiding element to define a receiving space between the evaporation tray and the gas guiding element, and a gas channel. The evaporation tray comprises a bottom wall and two opposing first sidewalls and two opposing second sidewalls extending from the periphery of the first bottom wall. At least one of the first sidewalls and/or at least one of the second sidewalls defines a number of gas holes. The gas holes communicate with the receiving space. One end of the gas channel connects the gas guiding element and communicates with the receiving space to feed gas into the receiving space. A vacuum evaporation device using the evaporating device is also provided.
Opening claim text (preview).
What is claimed is: 1. An evaporation device, composing: a gas guiding element; an evaporation tray received in the gas guiding element to define a receiving space between the evaporation tray and the gas guiding element; the evaporation tray comprising a first bottom wall, two opposite first sidewalls and two opposite second sidewalls extending from the first bottom wall, at least one of the first sidewalls and/or at least one of the second sidewalls defining a plurality of gas holes, the gas holes communicating with the receiving space, wherein the plurality of gas holes each have an extension line that inclines towards the first bottom wall; and wherein the gas guiding element comprises a second bottom wall, two opposite third sidewalls, and two opposite fourth sidewalls; the two third sidewalls and the two fourth sidewalls extend from the second bottom wall, the second bottom wall, the two third sidewalls and the two fourth sidewalls cooperatively define a cavity; wherein the two first sidewalls each inclined toward the two third sidewalls respectively, and the distal end of the two third sidewalls abuts against the free end of the two first sidewalls, respectively; a gas channel, one end of the gas channel connecting to the gas guiding element and communicating with the receiving space to feed gas into the receiving space. 2. The evaporation device as claimed in claim 1 , wherein the incline angles between each extension line and the first bottom wall are identical. 3. The evaporation device as claimed in claim 1 , wherein the gas holes are circular, the diameters of the gas hole are about 1.5 nm to about 2.5 nm. 4. The evaporation device as claimed in claim 1 , wherein the gas holes are uniformly distributed in the first sidewalls and/or the second sidewalls. 5. The evaporation device as claimed in claim 1 , wherein the evaporation tray further comprises at least one heating portion extending from the periphery of one of the first sidewalls or one of the second sidewalls. 6. The evaporation device as claimed in claim 1 , wherein the evaporation tray further comprises a receiving cavity cooperatively defined by the first bottom wall, the first sidewalls and the second sidewalls. 7. The evaporation device as claimed in claim 1 , wherein the second bottom wall defines at least two engaging holes, the gas channel comprises at least one reaction gas channel and at least one working gas channel, the reaction gas channel and the working gas channel communicate with the receiving space to feed reaction gas and working gas inside receiving space by corresponding engaging holes. 8. A vacuum evaporation device, comprising: a coating chamber; a vacuum pump communicating with the coating chamber; and a evaporation device retained in the coating chamber, wherein the evaporating device comprises a gas guiding element, an evaporation tray received in the gas guiding element to define a receiving space between the evaporation tray and the gas guiding element; and a gas channel; the evaporation tray comprises a bottom wall, two opposite first sidewalls and two opposite second sidewalls extending from the first bottom wall; at least one of the first sidewalls and/or at least one of the second sidewalls defines a plurality of gas holes, the gas holes communicating with the receiving space, wherein the plurality of gas holes each have an extension line that inclines towards the bottom wall; wherein the gas guiding element comprises a second bottom wall, two opposite third sidewalls, and two opposite fourth sidewalls; the two third sidewalls and the two fourth sidewalls extend from the second bottom wall, the second bottom wall, the two third sidewalls and the two fourth sidewalls cooperatively define a cavity; wherein the two first sidewalls each inclined toward the two third sidewalls respectively, and the distal end of the two third sidewalls abuts against the free end of the two first sidewalls, respectively; one end of the gas channel connecting to the gas guiding element and communicate the receiving space, to fed gas into the receiving space. 9. The vacuum evaporation device as claimed in claim 8 , wherein the incline angles between each extension line and the first bottom wall are identical. 10. The vacuum evaporation device as claimed in claim 8 , wherein the gas holes are circular, the diameters of the gas holes are about 1.5 nm to about 2.5 nm. 11. The vacuum evaporation device as claimed in claim 8 , wherein the gas holes are uniformly distributed in the first sidewalls and/or the second sidewalls. 12. The vacuum evaporation device as claimed in claim 8 , wherein the evaporation tray further comprises at least one heating portion extending from the periphery of one of the first sidewalls or one of the second sidewalls. 13. The vacuum evaporation device as claimed in claim 8 , wherein the evaporation tray further comprises a receiving cavity defined by the first bottom wall, the first sidewalls and the second sidewalls cooperatively.
Crucibles for source material (C23C14/28, C23C14/30 take precedence) · CPC title
Reactive sputtering or evaporation · CPC title
by evaporation using carrier gas in contact with the source material (C23C16/4486 takes precedence) · CPC title
characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials · CPC title
Gas flow assisted PVD deposition · CPC title
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