Composition for and method of suppressing titanium nitride corrosion

Patent metadata

Field	Value
Publication number	US-9416338-B2
Application number	US-201113878684-A
Country	US
Kind code	B2
Filing date	Oct 13, 2011
Priority date	Oct 13, 2010
Publication date	Aug 16, 2016
Grant date	Aug 16, 2016

Abstract

Cleaning compositions and processes for cleaning residue from a microelectronic device having said residue thereon. The composition comprises at least one amine, at least one oxidizing agent, water, and at least one borate species and achieves highly efficacious cleaning of the residue material, including post-ash residue, post-etch residue, post-CMP residue, particles, organic contaminants, metal ion contaminants, and combinations thereof from the microelectronic device while simultaneously not damaging the titanium nitride layers and low-k dielectric materials also present on the device.

First claim

What is claimed is:

1. A method of removing material from a microelectronic device having said material thereon, wherein the material comprises residue selected from the group consisting of post-ash residue, post-etch residue, post-CMP residue, and combinations thereof, said method comprising contacting the microelectronic device with a cleaning composition for sufficient time to at least partially remove said material from the microelectronic device, wherein the cleaning composition consists of at least one amine, at least one oxidizing agent, water, and at least one borate species, wherein the cleaning composition is substantially devoid of abrasive, wherein the pH is in a range from 9 to 11,
wherein the at least one amine is selected from the group consisting of: ammonia; pyridine; 2-ethylpyridine; 2-methoxypyridine; 3-methoxypyridine; 2-picoline; dimethylpyridine; piperidine; piperazine; triethylamine; triethanolamine; aminoethylethanolamine; choline; N-methylaminoethanol; aminoethoxyethanol; dimethylaminoethoxyethanol; diethanolamine; N-methyldiethanolamine; ethylamine; methylamine; isobutylamine; Benzylamine; tert-butylamine; tributylamine; dipropylamine; dimethylamine; diglycolamine; monoethanolamine; pyrrole; isoxazole; 1,2,4-triazole; bipyridine; pyrimidine; pyrazine; pyridazine; quinoline; isoquinoline; indole; imidazole; N-methylmorpholine-N-oxide (NMMO); trimethylamine-N-oxide; triethylamine-N-oxide; pyridine-N-oxide; N-ethylmorpholine-N-oxide; N-methylpyrrolidine-N-oxide; N-ethylpyrrolidine-N-oxide; 1-methylimidazole; diisopropylamine; diisobutylamine; Dimethylamine; Ethanamine; Ethylamine; Ethylenediamine; 1-Hexanamine; 1,6-Hexanediamine; aniline; aniline derivatives; polyamines; and combinations thereof, and
wherein the at least one oxidizing agent is selected from the group consisting of hydrogen peroxide (H 2 O 2 ), FeCl 3 (both hydrated and unhydrated), oxone (2KHSO 5 .KHSO 4 .K 2 SO 4 ), ozonated water, ammonium peroxomonosulfate, ammonium chlorite (NH 4 ClO 2 ), ammonium bromite (NH 4 ClO 2 ), ammonium chlorate (NH 4 ClO 3 ), ammonium bromate (NH 4 BrO 3 ), ammonium iodate (NH 4 IO 3 ), ammonium perchlorate (NH 4 ClO 4 ), ammonium perbromate (NH 4 BrO 4 ), ammonium periodate (NH 4 IO 3 ), ammonium persulfate ((NH 4 ) 2 S 2 O 8 ), ammonium hypochlorite (NH 4 ClO), ammonium hypobromite (NH 4 BrO), sodium persulfate (Na 2 S 2 O 8 ), sodium hypochlorite (NaClO), sodium hypobromite (NaBrO), potassium iodate (KIO 3 ), potassium bromate (KBrO 3 ), potassium permanganate (KMnO 4 ), potassium persulfate, nitric acid (HNO 3 ), potassium persulfate (K 2 S 2 O 8 ), potassium hypochlorite (KClO), potassium hypobromite (KBrO), tetramethylammonium chlorite ((N(CH 3 ) 4 )ClO 2 ), tetramethylammonium bromite ((N(CH 3 ) 4 )BrO 2 ), tetramethylammonium chlorate ((N(CH 3 ) 4 )ClO 3 ), tetramethylammonium bromate ((N(CH 3 ) 4 )BrO 3 ), tetramethylammonium iodate ((N(CH 3 ) 4 )IO 3 ), tetramethylammonium perchlorate ((N(CH 3 ) 4 )ClO 4 ), tetramethylammonium perbromate ((N(CH 3 ) 4 )BrO 4 ), tetramethylammonium periodate ((N(CH 3 ) 4 )IO 4 , tetramethylammonium persulfate ((N(CH 3 ) 4 )S 2 O 8 ), tetrabutylammonium peroxomonosulfate, peroxomonosulfuric acid, ferric compounds including chloride and/or nitrate, urea hydrogen peroxide ((CO(NH 2 ) 2 )H 2 O 2 ), peracetic acid (CH 3 (CO)OOH), perphthalic acid, and combinations thereof.

2. The method of claim 1 , wherein the cleaning composition comprises at least one amine, hydrogen peroxide, water, and at least one borate species.

3. The method of claim 1 , wherein the cleaning composition comprises ammonia, hydrogen peroxide, water, and at least one borate species.

4. The method of claim 1 , wherein the at least one amine comprises ammonia.

5. The method of claim 1 , wherein the at least one oxidizing agent comprises hydrogen peroxide.

6. The method of claim 1 , wherein the at least one borate species comprises a sodium, potassium or ammonium salt of monoborate, diborate, triborate, tetraborate, pentaborate, hexaborate, or perborate anion.

7. The method of claim 1 , wherein the at least one borate species comprises an ammonium cation.

8. The method of claim 1 , wherein the at least one borate species comprises ammonium tetraborate tetrahydrate.

9. The method of claim 1 , wherein the at least one borate species is generated in situ.

10. The method of claim 1 , wherein the cleaning composition comprises ammonia, hydrogen peroxide, ammonium tetraborate tetrahydrate, and water.

11. The method of claim 1 , wherein the cleaning composition selectively removes the material from the microelectronic device relative to titanium nitride and low-k dielectric material.

12. The method of claim 1 , wherein said contacting comprises conditions selected from the group consisting of: time of from about 0.5 minute to about 120 minutes; temperature in a range of from about 20° C. to about 70° C.; and combinations thereof.

13. The method of claim 1 , further comprising rinsing the microelectronic device with deionized water following contact with the composition.

14. A method of removing material from a microelectronic device having said material thereon, wherein the material comprises residue selected from the group consisting of post-ash residue, post-etch residue, post-CMP residue, and combinations thereof, said method comprising contacting the microelectronic device with a cleaning composition for sufficient time to at least partially remove said material from the microelectronic device, wherein the cleaning composition comprises ammonia, hydrogen peroxide, water, and at least one borate species, wherein the cleaning composition is substantially devoid of abrasive, and wherein the pH is in a range from 9 to 11.

15. The method of claim 14 , wherein the at least one borate species comprises ammonium tetraborate tetrahydrate.

16. A method of removing material from a microelectronic device having said material thereon, wherein the material comprises residue selected from the group consisting of post-ash residue, post-etch residue, post-CMP residue, and combinations thereof, said method comprising contacting the microelectronic device with a cleaning composition for sufficient time to at least partially remove said material from the microelectronic device, wherein the cleaning composition comprises ammonia, at least one oxidizing agent, water, and at least one borate species, wherein the cleaning composition is substantially devoid of abrasive, wherein the pH is in a range from 9 to 11,
wherein the at least one oxidizing agent comprises a species selected from the group consisting of hydrogen peroxide (H 2 O 2 ), FeCl 3 (both hydrated and unhydrated), oxone (2KHSO 5 .KHSO 4 .K 2 SO 4 ), ozonated water, ammonium peroxomonosulfate, ammonium chlorite (NH 4 ClO 2 ), ammonium bromite (NH 4 ClO 2 ), ammonium chlorate (NH 4 ClO 3 ), ammonium bromate (NH 4 BrO 3 ), ammonium iodate (NH 4 IO 3 ), ammonium perchlorate (NH 4 ClO 4 ), ammonium perbromate (NH 4 BrO 4 ), ammonium periodate (NH 4 IO 3 ), ammonium persulfate ((NH 4 ) 2 S 2 O 8 ), ammonium hypochlorite (NH 4 ClO), ammonium hypobromite (NH 4 BrO), sodium persulfate (Na 2 S 2 O 8 ), sodium hypochlorite (NaClO), sodium hypobromite (NaBrO), potassium iodate (KIO 3 ), potassium bromate (KBrO 3 ), potassium permanganate (KMnO 4 ), potassium persulfate, nitric acid (HNO 3 ), potassium persulfate (K 2 S 2 O 8 ), potassium hypochlorite (KClO), potassium hypobromite (KBrO), tetramethylammonium chlorite ((N(CH 3 ) 4 )ClO 2 ), tetramethylammonium bromite ((N(CH 3 ) 4 )BrO 2 ), tetramethylammonium chlorate ((N(CH 3 ) 4 )ClO 3 ), tetramethylammonium bromate ((N

Assignees

• Cooper Emanuel I
• Totir George Gabriel
• Payne Makonnen
• Advanced Tech Materials
• IBM

Inventors

• Cooper Emanuel I
• Totir George Gabriel
• Payne Makonnen

Classifications

• H10P70/277

  the processing being a planarisation of conductive layers · CPC title

• H10P70/234

  the processing being the formation of vias or contact holes · CPC title

• H10W20/081

  by forming openings in the dielectric parts · CPC title

• G03F7/425

  containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen · CPC title

• C11D3/0073 Primary

  Anticorrosion compositions · CPC title