Low-e panels and methods for forming the same

Patent metadata

Field	Value
Publication number	US-9416049-B2
Application number	US-201414312104-A
Country	US
Kind code	B2
Filing date	Jun 23, 2014
Priority date	Jun 23, 2014
Publication date	Aug 16, 2016
Grant date	Aug 16, 2016

Abstract

Embodiments provided herein describe low-e panels and methods for forming low-e panels. A transparent substrate is provided. A reflective layer is formed above the transparent substrate. A dielectric layer is formed between the transparent substrate and the reflective layer. The dielectric layer includes niobium, tin, and aluminum.

First claim

What is claimed is:

1. A low-e panel comprising:
a transparent substrate;
a metal oxide layer formed directly on the transparent substrate, wherein the metal oxide layer consists of zinc-tin oxide, titanium oxide, zinc oxide, tin oxide, or aluminum-tin oxide;
a dielectric layer formed directly on the metal oxide layer, wherein the dielectric layer comprises niobium-tin-aluminum oxide; and
a reflective layer formed above the dielectric layer.

2. The low-e panel of claim 1 , wherein the metal oxide layer consists of zinc-tin oxide, titanium oxide, tin oxide, or aluminum-tin oxide.

3. The low-e panel of claim 2 , further comprising a second metal oxide layer formed between the dielectric layer and the reflective layer, wherein the second metal oxide layer consists of zinc oxide, and the reflective layer is formed directly on the second metal oxide layer.

4. The low-e panel of claim 3 , wherein the transparent substrate comprises glass.

5. A low-e panel comprising:
a transparent substrate;
a metal oxide layer formed directly on the transparent substrate, wherein the metal oxide layer consists of zinc-tin oxide, titanium oxide, tin oxide, or aluminum-tin oxide;
a dielectric layer formed directly on the metal oxide layer, wherein the dielectric layer comprises niobium-tin-aluminum oxide;
a seed layer formed directly on the dielectric layer, wherein the seed layer comprises zinc; and
a reflective layer formed directly on the seed layer.

6. The low-e panel of claim 5 , wherein the seed layer comprises zinc oxide.

7. The low-e panel of claim 6 , wherein the dielectric layer consists of niobium-tin-aluminum oxide.

8. The low-e panel of claim 7 , wherein the metal oxide layer consists of zinc-tin oxide.

9. The low-e panel of claim 8 , wherein the metal oxide layer is formed directly on the transparent substrate.

10. The low-e panel of claim 8 , further comprising a protective layer formed directly on the transparent substrate, wherein the metal oxide layer is formed directly on the protective layer.

11. The low-e panel of claim 10 , wherein the protective layer comprises silicon nitride.

12. The low-e panel of claim 8 , wherein the reflective layer comprises silver, and the transparent substrate comprises glass.

13. A low-e panel comprising:
a transparent substrate, wherein the transparent substrate comprises glass;
a first metal oxide layer formed directly on the transparent substrate, wherein the first metal oxide layer consists of zinc-tin oxide, titanium oxide, tin oxide, or aluminum-tin oxide;
a first dielectric layer formed directly on the first metal oxide layer, wherein the first dielectric layer comprises niobium-tin-aluminum oxide;
a first seed layer formed directly on the first dielectric layer, wherein the first seed layer comprises zinc oxide;
a first reflective layer formed directly on the first seed layer, wherein the first reflective layer comprises silver;
a first barrier layer formed directly on the first reflective layer, wherein the first barrier layer comprises at least one of nickel, titanium, niobium, or a combination thereof;
a second metal oxide layer formed directly on the first barrier layer, wherein the second metal oxide layer consists of zinc-tin oxide, titanium oxide, tin oxide, or aluminum-tin oxide;
a second dielectric layer formed directly on the second metal oxide layer, wherein the second dielectric layer comprises niobium-tin-aluminum oxide;
a second seed layer formed directly on the second dielectric layer, wherein the second seed layer comprises zinc oxide;
a second reflective layer formed directly on the second seed layer, wherein the second reflective layer comprises silver;
a second barrier layer formed directly on the second reflective layer, wherein the second barrier layer comprises at least one of nickel, titanium, niobium, or a combination thereof;
a first over-coating layer formed directly on the second barrier layer, wherein the first over-coating layer consists of zinc-tin oxide, titanium oxide, tin oxide, or aluminum-tin oxide;
a second over-coating layer formed directly on the first over-coating layer, wherein the second over-coating layer comprises zinc oxide; and
a protective layer formed directly on the second over-coating layer, wherein the protective layer comprises silicon nitride.

14. The low-e panel of claim 13 , wherein each of the first dielectric layer and the second dielectric layer consists of niobium-tin-aluminum oxide.

15. The low-e panel of claim 14 , wherein each of the first metal oxide layer and the second metal oxide layer consists of zinc-tin oxide.

Assignees

• Intermolecular Inc
• Intermolecular Inc

Inventors

• Ju Tong
• Cheng Jeremy
• Ding Guowen
• Le Minh Huu
• Schweigert Daniel
• Zhang Guizhen

Classifications

• C23C14/081 Primary

  of aluminium, magnesium or beryllium · CPC title

• C23C14/086

  of zinc, germanium, cadmium, indium, tin, thallium or bismuth · CPC title

• C03C2217/218

  V2O5, Nb2O5, Ta2O5 · CPC title

• C03C2217/216

  ZnO · CPC title

• C03C2217/211

  SnO2 · CPC title