Solid state material

Patent metadata

Field	Value
Publication number	US-9416005-B2
Application number	US-99500009-A
Country	US
Kind code	B2
Filing date	Jul 22, 2009
Priority date	Jul 23, 2008
Publication date	Aug 16, 2016
Grant date	Aug 16, 2016

Abstract

A solid state system comprising a host material and a quantum spin defect, wherein the quantum spin defect has a T 2 at room temperature of about 300 μs or more and wherein the host material comprises a layer of single crystal CVD diamond having a total nitrogen concentration of about 20 ppb or less, wherein the surface roughness, R q of the single crystal diamond within an area defined by a circle of radius of about 5 μm centered on the point on the surface nearest to where the quantum spin defect is formed is about 10 nm or less, methods for preparing solid state systems and the use of single crystal diamond having a total nitrogen concentration of about 20 ppb or less in spintronic applications are described.

First claim

The invention claimed is:

1. A solid state system comprising a host material and a quantum spin defect, the host material comprising a layer of single crystal chemical vapor deposition (CVD) diamond having a total nitrogen concentration of about 20 ppb or less and a concentration of paramagnetic defects of about 1 ppm or less, and the quantum spin defect having an electronic spin state with a decoherence time (T 2 ) at room temperature of between 500 μs and 1.8 ms wherein a surface roughness, R q of the layer of single crystal CVD diamond within an area defined by a circle of radius of about 5 μm centered on the point on a surface of the layer of single crystal CVD diamond nearest to where the quantum spin defect is formed is about 10 nm or less, wherein the quantum spin defect is a nitrogen-vacancy (NV) center disposed within the layer of single crystal CVD diamond, and wherein the NV center is positioned within about 100 μm of the surface of the layer of single crystal CVD diamond.

2. A solid state system according to claim 1 , wherein the stability of the transition from the m s =±1 to the m s =0 state for the quantum spin defect is such that the Full Width at Half Maximum (FWHM) of the peak of a histogram of the number of photons having a particular frequency versus the frequency of the photon is about 500 MHz or less.

Assignees

• Scarsbrook Geoffrey Alan
• Twitchen Daniel James
• Markham Matthew Lee
• Element Six Tech Ltd

Inventors

• Scarsbrook Geoffrey Alan
• Twitchen Daniel James
• Markham Matthew Lee

Classifications

• B82Y10/00 Primary

  Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic · CPC title

• G06N99/002

  Physics · mapped topic

• H10N99/05 Primary

  Devices based on quantum mechanical effects, e.g. quantum interference devices or metal single-electron transistors · CPC title

• G06N10/40

  Physical realisations or architectures of quantum processors or components for manipulating qubits, e.g. qubit coupling or qubit control · CPC title

• C30B29/04

  Diamond · CPC title