Substrate for power module, substrate with heat sink for power module, power module, method for producing substrate for power module, and method for producing substrate with heat sink for power module

Patent metadata

Field	Value
Publication number	US-9414512-B2
Application number	US-201013503126-A
Country	US
Kind code	B2
Filing date	Oct 19, 2010
Priority date	Oct 22, 2009
Publication date	Aug 9, 2016
Grant date	Aug 9, 2016

Abstract

Provided is a power module substrate including a ceramic substrate, and a metal plate which contains aluminum or an aluminum alloy, and which is stacked and bonded on a surface of the ceramic substrate, wherein one or more additional elements selected from Ag, Zn, Ge, Mg, Ca, Ga, and Li are solid-solubilized in the metal plate, and the Ag concentration in the metal plate in the vicinity of the interface with the ceramic substrate is greater than or equal to 0.05% by mass and less than or equal to 10% by mass, or the total concentration of Zn, Ge, Mg, Ca, Ga, and Li in the metal plate in the vicinity of the interface with the ceramic substrate is greater than or equal to 0.01% by mass and less than or equal to 5% by mass.

First claim

The invention claimed is:

1. A power module substrate comprising:
a ceramic substrate composed of AlN or Si 3 N 4 ; and
a metal plate which contains aluminum or an aluminum alloy, and which is stacked and bonded on a surface of the ceramic substrate;
wherein one or more additional elements selected from Ag, Zn, Ge, Mg, Ca, Ga, and Li are solid-solubilized in said metal plate,
an Ag concentration in said metal plate in the vicinity of the interface with said ceramic substrate is greater than or equal to 0.05% by mass and less than or equal to 10% by mass, or the total concentration of Zn, Ge, Mg, Ca, Ga, and Li in said metal plate in the vicinity of the interface with said ceramic substrate is greater than or equal to 0.01% by mass and less than or equal to 5% by mass,
an oxygen high concentration part having an oxygen concentration two or more times the oxygen concentration in the crystal grain of said ceramic substrate is formed in the bonding interface between said metal plate and said ceramic substrate, and
the thickness of said oxygen high concentration part is less than or equal to 4 nm.

2. A power module substrate according to claim 1 , wherein
in the bonding interface between said metal plate and said ceramic substrate, an additional element high concentration part is formed in which the concentration of said additional element is two or more times the concentration of said additional element in said metal plate.

3. A power module substrate according to claim 1 , wherein
said ceramic substrate is composed of AlN, and
the mass ratio of Al, said additional element, O, and N when said bonding interface including said additional element high concentration part is analyzed by means of energy dispersive X-ray analysis is Al:additional element:O:N=50 to 90% by mass:1 to 30% by mass:1 to 10% by mass:25% by mass or less.

4. A power module substrate according to claim 1 , wherein
said ceramic substrate is composed of Si 3 N 4 , and
the mass ratio of Al, Si, said additional element, O, and N when said bonding interface including said additional element high concentration part is analyzed by means of energy dispersive X-ray analysis is Al:Si:additional element:O:N=15 to 45% by mass:15 to 45% by mass:1 to 30% by mass:1 to 10% by mass:25% by mass or less.

Assignees

• Nagatomo Yoshiyuki
• Akiyama Kazuhiro
• Terasaki Nobuyuki
• Kuromitsu Yoshirou
• Mitsubishi Materials Corp

Inventors

• Nagatomo Yoshiyuki
• Akiyama Kazuhiro
• Tonomura Hiroshi
• Terasaki Nobuyuki
• Kuromitsu Yoshirou

Classifications

• H10W90/734

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W40/037

  Assembling together parts thereof · CPC title

• H10W40/258

  Metallic materials (H10W40/254, H10W40/257, H10W40/255, H10W40/251, H10W40/253 take precedence) · CPC title

• H10W40/255 Primary

  having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates · CPC title

• H10W40/47

  by flowing liquids, e.g. forced water cooling · CPC title