Resistive switching element and use thereof

Patent metadata

Field	Value
Publication number	US-9412940-B2
Application number	US-201314418859-A
Country	US
Kind code	B2
Filing date	Jul 19, 2013
Priority date	Aug 3, 2012
Publication date	Aug 9, 2016
Grant date	Aug 9, 2016

Abstract

A bipolar resistive switching device (RSM device, FIG. 35 ) comprises an electrically conductive bottom electrode (BE, FIG. 35 ); a stack of transition metal oxides layers (RSM, FIG. 35 ), a number of transition metal oxide layers (RSO, FIG. 35 ) being equal or greater than 2, the stack comprising: at least one MO x layer (RSOA, FIG. 35 ), at least one oxygen gettering layer NO y (RSOB, FIG. 35 ). The resistive switching device further comprises an electrically conductive top electrode (TE, FIG. 35 ).

First claim

The invention claimed is:

1. A bipolar resistive switching device comprising:
an electrically conductive bottom electrode;
a stack of transition metal oxides layers, a number of transition metal oxide layers being equal or greater than 2, the stack comprising:
at least one MOx layer,
at least one oxygen gettering layer NO y ; and

the resistive switching device further comprises
an electrically conductive top electrode.

2. The switching device of claim 1 , wherein the oxygen gettering layer comprises a transition metal oxide taken from the list comprising: CrO y , TiO y , HfO y , NbO y .

3. The switching device of claim 2 , wherein a value of the stochiometric number y is in the range 0<y≦2.

4. The switching device of claim 1 , wherein values of the stochiometric number x is in the range 0<x≦2.5.

5. The switching device of claim 1 , wherein the metal M is taken from the list comprising: Cr, Ti, Hf, Ta, Nb.

6. The switching device of claim 1 wherein the stack of transition metal oxide layer further includes at least one layer of metal (INTE).

7. A circuit comprising 2 bipolar resistive switching devices as described in claim 1 , the 2 bipolar resistive switching devices being serially connected in such a way that their polarities are opposed.

8. A programming operation of the circuit of claim 7 , wherein each one of the voltage signals −5V≦V p1 ≦+5V, −5V≦V p2 ≦+5V, −5V≦V p3 ≦+5V are simultaneously applied to each one of the electrodes forming the circuit, causing the two bipolar resistive switching devices to simultaneously change resistive state.

Assignees

• Ecole Polytechnique Fed De Lausanne (Epfl)

Inventors

• Sacchetto Davide
• Bobba Shashi Kanth
• Gaillardon Pierre-Emmanuel Julien Marc
• Leblebici Yusuf
• De Micheli Giovanni
• Demirci Tugba

Classifications

• G11C2213/56

  Structure including two electrodes, a memory active layer and a so called passive or source or reservoir layer which is NOT an electrode, wherein the passive or source or reservoir layer is a source of ions which migrate afterwards in the memory active layer to be only trapped there, to form conductive filaments there or to react with the material of the memory active layer in redox way · CPC title

• G11C13/0007

  comprising metal oxide memory material, e.g. perovskites · CPC title

• G11C2013/0045

  Read using current through the cell · CPC title

• H01L45/08

  Electricity · mapped topic

• G11C2213/72

  Array wherein the access device being a diode · CPC title