Schottky diode with improved surge capability

Patent metadata

Field	Value
Publication number	US-9412880-B2
Application number	US-90307710-A
Country	US
Kind code	B2
Filing date	Oct 12, 2010
Priority date	Oct 21, 2004
Publication date	Aug 9, 2016
Grant date	Aug 9, 2016

Abstract

An SiC Schottky diode die or a Si Schottky diode die is mounted with its epitaxial anode surface connected to the best heat sink surface in the device package. This produces a substantial increase in the surge current capability of the device.

First claim

What is claimed is:

1. A Schottky diode comprising:
a substrate and a cathode electrode above the substrate, said cathode electrode is a bondable metal;
an epitaxially layer on the bottom of the substrate;
a barrier metal interface located beneath the epitaxially layer;
an anode contact located beneath the barrier metal interface, said anode contact is a solderable metal comprising silver;
a package for said Schottky diode, said package comprising a lead frame located beneath said anode contact, said anode contact is secured to said lead frame; and
a passivation mass is located between the epitaxially layer and said lead frame;
said solderable metal of said anode contact being a spaced distance from said passivation mass such that adjacent sides of said solderable metal and said passivation mass form a gap that extends to the bottom surface of said solderable metal.

2. The Schottky diode of claim 1 , further comprising a solder paste located between said anode contact and said lead frame.

3. The Schottky diode of claim 1 , wherein said substrate comprises silicon.

4. The Schottky diode of claim 3 , wherein said package comprises a cup.

5. The Schottky diode of claim 3 , wherein said lead frame comprises metal.

6. The Schottky diode of claim 3 , further comprising:
a guard ring in the bottom of said epitaxially layer and surrounding said anode contact,
wherein said passivation mass is disposed between the guard ring and the lead frame.

7. The Schottky diode of claim 6 , further comprising a solder paste located between said anode contact and said lead frame.

8. The Schottky diode of claim 1 , wherein the substrate comprises silicon carbide.

9. The Schottky diode of claim 8 , wherein said lead frame comprises metal.

10. The Schottky diode of claim 8 , wherein said package comprises a cup.

11. The Schottky diode of claim 8 , further comprising a solder paste located between said anode contact and said lead frame.

12. The Schottky diode of claim 8 , further comprising:
a guard ring in the bottom of said epitaxially layer and surrounding said anode contact,
wherein said passivation mass is disposed between the guard ring and the lead frame.

13. The Schottky diode of claim 12 , wherein said lead frame comprises metal.

14. The Schottky diode of claim 12 , wherein said package comprises a cup.

15. The Schottky diode of claim 12 , further comprising a solder paste located between said anode contact and said lead frame.

16. A Schottky diode comprising:
a substrate and a cathode electrode above the substrate, said cathode electrode comprises aluminum;
an epitaxially layer on the bottom of the substrate;
a barrier metal interface located beneath the epitaxially layer;
an anode contact located beneath the barrier metal interface, said anode contact is a solderable metal comprising nickel;
a package for said Schottky diode, said package comprising a lead frame located beneath said anode contact, said anode contact is connected to said lead frame; and
a passivation mass is located between the epitaxially layer and said lead frame;
said solderable metal of said anode contact being a spaced distance from said passivation mass such that adjacent sides of said solderable metal and said passivation mass form a gap that extends to the bottom surface of said solderable metal.

17. The Schottky diode of claim 16 , further comprising a solder paste located between said anode contact and said lead frame.

18. The Schottky diode of claim 16 , further comprising a guard ring in the bottom of said epitaxially layer and surrounding said anode contact.

19. A Schottky diode comprising:
a substrate and a cathode electrode above the substrate, said cathode electrode comprises aluminum;
an epitaxially layer on the bottom of the substrate;
a barrier metal interface located beneath the epitaxially layer;
an anode contact located beneath the barrier metal interface, said anode contact is a solderable metal comprising chromium;
a package for said Schottky diode, said package comprising a metal lead frame located beneath said anode contact, said anode contact is connected to said metal lead frame; and
a passivation mass is located between the epitaxially layer and said metal lead frame;
said solderable metal of said anode contact being a spaced distance from said passivation mass such that adjacent sides of said solderable metal and said passivation mass form a gap that extends to the bottom surface of said solderable metal.

20. The Schottky diode of claim 19 , further comprising:
a guard ring in the bottom of said epitaxially layer and surrounding said anode contact.

Assignees

• Carta Rossano
• Merlin Luigi
• Bellemo Laura
• Vishay Siliconix

Inventors

• Carta Rossano
• Merlin Luigi
• Bellemo Laura

Classifications

• H10W90/736

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W72/387

  Flow barriers · CPC title

• H10W70/481

  for devices being provided for in groups H10D8/00 - H10D48/00 · CPC title

• H10D62/8325

  Silicon carbide · CPC title

• H10D62/106

  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions · CPC title