Organic light emitting diode display device and method for manufacturing the same

Patent metadata

Field	Value
Publication number	US-9412801-B2
Application number	US-201213622799-A
Country	US
Kind code	B2
Filing date	Sep 19, 2012
Priority date	Sep 20, 2011
Publication date	Aug 9, 2016
Grant date	Aug 9, 2016

Abstract

An OLED display device includes a display area of a substrate to display images; a non-display area surrounding the display area and applying signals to pixels within the display area; a first thin film transistor formed in the non-display area of the substrate; a second thin film transistor formed in the display area of the substrate; a planarization film formed over the first and second thin film transistors; a first electrode formed on the planarization film in the non-display area and formed with at least one first opening; a second electrode formed on the planarization film and connected to a electrode of the second thin film transistor; a bank pattern formed on the second electrode and the first electrode and exposing a part of the second electrode. The bank pattern is adjacent to the first electrode.

First claim

What is claimed is:

1. An organic light-emitting diode display device comprising:
a display area defined on a substrate and configured to display images;
a non-display area defined on the substrate to include the periphery of the display area and configured to apply signals to pixels within the display area;
a first thin film transistor on the non-display area of the substrate;
a second thin film transistor on the display area of the substrate;
a passivation layer on the first thin film transistor and the second thin film transistor;
a planarization film on the passivation layer;
a first electrode on the planarization film in the non-display area and including at least one first opening;
a second electrode on the planarization film within the display area and connected to an electrode of the second thin film transistor;
a bank pattern directly on the second electrode and the first electrode, the bank pattern configured to define light-emission cells and expose a part of the second electrode, wherein the bank pattern is arranged to be adjacent to the first electrode within the non-display area, the bank pattern extending over a conductive pattern in the non-display area to connect to the first electrode to a supply voltage source;
an organic light-emitting layer formed directly on the second electrode; and
a third electrode formed directly on the organic light-emitting layer,
wherein the first electrode is directly connected to the third electrode within the non-display area, wherein the at least one first opening of the first electrode is placed in a gate-in-panel (GIP) area in the non-display area.

2. The organic light-emitting diode display device of claim 1 , wherein the second electrode of an outer pixel within the display area is spaced a distance from the first electrode within the non-display area by a second opening.

3. The organic light-emitting diode display device of claim 2 , wherein the distance is a single pixel width.

4. The organic light-emitting diode display device of claim 1 , wherein the second electrode within the display area and the first electrode within the non-display area are formed from a same material and through a same process.

5. The organic light-emitting diode display device of one of claim 1 , wherein the second electrode within the display area and the first electrode within the non-display area each include: a transparent electrode formed from one of indium-tin-oxide (ITO), tin-oxide (TO), indium-zinc-oxide (IZO) and indium-tin-zinc-oxide (ITZO); a silver layer formed on the transparent electrode; and a secondary transparent electrode formed on the silver layer.

6. The organic light-emitting diode display device of claim 1 , wherein the non-display area includes: a circuit area in which the first thin film transistor is disposed; and a ground contact area positioned at an outer side of the circuit area and used for a ground connection.

7. A method for manufacturing an organic light-emitting diode display device, the method comprising:
preparing a substrate defined into a display area configured to display images, and a non-display area around the display area;
forming a first film transistor within the non-display area of the substrate;
forming a second thin film transistor within the display area of the substrate;
forming a passivation layer on the first film transistor and the second thin film transistor;
forming a planarization film with a first contact hole exposing a part of an electrode of the second thin film transistor, on the substrate provided with the first and second thin film transistors;
forming a first electrode in the non-display area with at least one first opening and facing the first thin film transistor, on the planarization film provided with the first contact hole, and a second electrode in the display area connected to the electrode of the second thin film transistor;
forming a bank pattern with an opening exposing a part of the second electrode, directly on the first electrode and the second electrode, wherein the bank pattern defines light-emission cells and is arranged to be adjacent to the first electrode within the non-display area, the bank pattern extending over a conductive pattern that connects the first electrode in the non-display area to ground voltage;
forming an organic light-emitting layer directly on the second electrode; and
forming a third electrode directly on the organic light-emitting layer,
wherein the first electrode is directly connected to the third electrode in the non-display area, wherein the at least one first opening of the first electrode is placed in a gate-in-panel (GIP) area in the non-display area.

8. The method of claim 7 , wherein the second electrode in the display area of an outer pixel within the display area is spaced a distance from the first electrode in the non-display area by a second opening.

9. The method of claim 8 , wherein the distance is a single pixel width.

10. The method of claim 8 , wherein the second opening in the non-display area is formed at the same time as the first opening in the non-display area.

11. The method of claim 7 , wherein the second electrode in the display area and the first electrode in the non-display area each include: a transparent electrode formed from one of indium-tin-oxide (ITO), tin-oxide (TO), indium-zinc-oxide (IZO) and indium-tin-zinc-oxide (ITZO); a silver layer formed on the transparent electrode; and a secondary transparent electrode formed on the silver layer.

12. The organic light-emitting diode display device of claim 1 , wherein the first electrode within the non-display area includes a plurality of first openings and wherein the plurality of the first openings are spaced a fixed interval from one another.

13. The organic light-emitting diode display device of claim 1 , wherein the first electrode within the non-display area includes a second opening and wherein the second opening is spaced a distance from the second electrode of an outer pixel within the display area.

14. The organic light-emitting diode display device of claim 1 , wherein the first and second openings allow for out-gassing of materials from the planarization film within the non-display area to be exhausted to the bank pattern within the non-display area.

15. The organic light-emitting diode display device of claim 1 , wherein the non-display area comprises:
a circuit area having the first thin film transistor; and
a ground contact area at an outer side of the circuit area and having a conductive pattern configured to electrically connect an external ground source,
wherein the conductive pattern is electrically connected to the first electrode.

16. An apparatus comprising:
a display area defined on a substrate and configured to display images;
a non-display area defined on the substrate to include the periphery of the display area and configured to apply signals to pixels within the display area;
a first thin film transistor on the non-display area of the substrate;
a second thin film transistor on the display area of the substrate;
a passivation layer on the first thin film transistor and the second thin film transistor;
a planarization film on the passivation layer;
a first electrode on the planarization film in the non-display area and including at least one first opening;
a second electrode on the planarization film within the display area and connected to an electrode of the second thin film transistor;
a bank pattern directly on the second electrode and the first electrode, the bank pattern configured to define light-emission cells and

Assignees

• Lg Display Co Ltd

Inventors

• Choi Hee Dong

Classifications

• H10K59/80522

  combined with auxiliary electrodes · CPC title

• H10D86/441

  Interconnections, e.g. scanning lines · CPC title

• H10D86/60

  wherein the TFTs are in active matrices · CPC title

• H10D86/40

  characterised by multiple TFTs · CPC title

• H01L27/3276 Primary

  Electricity · mapped topic