Semiconductor device and method for manufacturing the same

Patent metadata

Field	Value
Publication number	US-9412798-B2
Application number	US-201414487360-A
Country	US
Kind code	B2
Filing date	Sep 16, 2014
Priority date	Jul 31, 2008
Publication date	Aug 9, 2016
Grant date	Aug 9, 2016

Abstract

In an active matrix display device, electric characteristics of thin film transistors included in a circuit are important, and performance of the display device depends on the electric characteristics. Thus, by using an oxide semiconductor film including In, Ga, and Zn for an inverted staggered thin film transistor, variation in electric characteristics of the thin film transistor can be reduced. Three layers of a gate insulating film, an oxide semiconductor layer and a channel protective layer are successively formed by a sputtering method without being exposed to air. Further, in the oxide semiconductor layer, the thickness of a region overlapping with the channel protective film is larger than that of a region in contact with a conductive film.

First claim

What is claimed is:

1. A display device comprising:
a transistor comprising:
a gate electrode over a substrate;
a first insulating layer comprising silicon nitride over the gate electrode;
a second insulating layer comprising silicon oxide over the first insulating layer;
an oxide semiconductor layer comprising a channel formation region overlapping the gate electrode with the first insulating layer and the second insulating layer therebetween;
a third insulating layer comprising silicon oxide over the channel formation region; and
a source electrode and a drain electrode over the third insulating layer;

a fourth insulating layer comprising silicon oxide over the source electrode and the drain electrode;
a fifth insulating layer comprising an organic material over the fourth insulating layer; and
a light-emitting element comprising:
a first electrode over the fifth insulating layer;
an electroluminescent layer over the first electrode; and
a second electrode over the electroluminescent layer; and
a protective film comprising silicon nitride over the light-emitting element,

wherein the first electrode is electrically connected to one of the source electrode and the drain electrode of the transistor, and
wherein the transistor has a single-gate structure.

2. The display device according to claim 1 , wherein the first electrode is in direct contact with the one of the source electrode and the drain electrode of the transistor.

3. The display device according to claim 1 , further comprising a sixth insulating layer comprising silicon nitride between the fourth insulating layer and the sixth insulating layer.

4. A display module including the display device according to claim 1 .

5. A television including the display device according to claim 1 .

6. A display device comprising a pixel comprising:
a first transistor;
a second transistor, wherein each of the first transistor and the second transistor comprises:
a gate electrode over a substrate;
a first insulating layer comprising silicon nitride over the gate electrode;
a second insulating layer comprising silicon oxide over the first insulating layer;
an oxide semiconductor layer comprising a channel formation region overlapping the gate electrode with the first insulating layer and the second insulating layer therebetween;
a third insulating layer comprising silicon oxide over the channel formation region; and
a source electrode and a drain electrode over the third insulating layer;

a fourth insulating layer comprising silicon oxide over the source electrode and the drain electrode;
a fifth insulating layer comprising an organic material over the fourth insulating layer;
a capacitor; and
a light-emitting element, the light-emitting element comprising:
a first electrode over the fifth insulating layer;
an electroluminescent layer over the first electrode; and
a second electrode over the electroluminescent layer,

wherein one of the source electrode and the drain electrode of the first transistor is electrically connected to a source wiring,
wherein the other of the source electrode and the drain electrode of the first transistor is electrically connected to one electrode of the capacitor,
wherein the gate electrode of the second transistor is electrically connected to the one electrode of the capacitor,
wherein one of the source electrode and the drain electrode of the second transistor is electrically connected to the first electrode of the light-emitting element, and
wherein the other of the source electrode and the drain electrode of the second transistor is electrically connected to a power source line.

7. The display device according to claim 6 ,
wherein the one electrode of the capacitor comprises the same material and is provided on the same surface as the source electrode and the drain electrode, and
wherein the other electrode of the capacitor comprises the same material and is provided on the same surface as the gate electrode.

8. The display device according to claim 6 , wherein the first electrode is in direct contact with the one of the source electrode and the drain electrode of the second transistor.

9. The display device according to claim 6 , wherein the first transistor and the second transistor each have a single-gate structure.

10. The display device according to claim 6 , further comprising a sixth insulating layer comprising silicon nitride between the fourth insulating layer and the sixth insulating layer.

11. A display module including the display device according to claim 6 .

12. A television including the display device according to claim 6 .

13. A display device comprising a pixel comprising:
a first transistor;
a second transistor, wherein each of the first transistor and the second transistor comprises:
a gate electrode comprising copper over a substrate;
a first insulating layer comprising silicon nitride over the gate electrode;
a second insulating layer comprising silicon oxide over the first insulating layer;
an oxide semiconductor layer comprising a channel formation region comprising indium, gallium, and zinc and overlapping the gate electrode with the first insulating layer and the second insulating layer therebetween;
a third insulating layer comprising silicon oxide over the channel formation region; and
a source electrode and a drain electrode comprising titanium over the third insulating layer;

a fourth insulating layer comprising silicon oxide over the source electrode and the drain electrode;
a fifth insulating layer comprising an organic material over the fourth insulating layer;
a capacitor; and
a light-emitting element, the light-emitting element comprising:
a first electrode comprising indium tin oxide over the fifth insulating layer;
an electroluminescent layer over the first electrode; and
a second electrode comprising aluminum over the electroluminescent layer,

wherein one of the source electrode and the drain electrode of the first transistor is electrically connected to a source wiring,
wherein the other of the source electrode and the drain electrode of the first transistor is electrically connected to one electrode of the capacitor,
wherein the gate electrode of the second transistor is electrically connected to the one electrode of the capacitor,
wherein one of the source electrode and the drain electrode of the second transistor is electrically connected to the first electrode of the light-emitting element,
wherein the other of the source electrode and the drain electrode of the second transistor is electrically connected to a power source line, and
wherein a protective film comprising silicon nitride is provided over the light-emitting element.

14. The display device according to claim 13 ,
wherein the one electrode of the capacitor comprises the same material and is provided on the same surface as the source electrode and the drain electrode, and
wherein the other electrode of the capacitor comprises the same material and is provided on the same surface as the gate electrode.

15. The display device according to claim 13 , wherein the first electrode is in direct contact with the one of the source electrode and the drain electrode of the second transistor.

16. The display device according to claim 13 , wherein the first transistor and the second transistor each have a single-gate structure.

17. The display device according to claim 13 , further comprising a sixth insulating layer comprising silicon nitride between the fourth insulating layer and the sixth insulating layer.

Assignees

• Semiconductor Energy Lab

Inventors

• Yamazaki Shunpei
• Miyairi Hidekazu
• Akimoto Kengo
• Shiraishi Kojiro

Classifications

• H10P14/3434

  being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title

• H10P14/3426

  Oxides · CPC title

• H10P14/22

  using physical deposition, e.g. vacuum deposition or sputtering · CPC title

• H10D30/0312

  characterised by the gate electrodes · CPC title

• H10K59/8722

  Peripheral sealing arrangements, e.g. adhesives, sealants · CPC title